-
公开(公告)号:US20220278048A1
公开(公告)日:2022-09-01
申请号:US17749442
申请日:2022-05-20
Applicant: Invensas Corporation
Inventor: Shaowu Huang , Javier A. Delacruz
IPC: H01L23/538 , H01L21/48 , H01L23/498 , H01L23/00 , H01L25/065
Abstract: Dielets on flexible and stretchable packaging for microelectronics are provided. Configurations of flexible, stretchable, and twistable microelectronic packages are achieved by rendering chip layouts, including processors and memories, in distributed collections of dielets implemented on flexible and/or stretchable media. High-density communication between the dielets is achieved with various direct-bonding or hybrid bonding techniques that achieve high conductor count and very fine pitch on flexible substrates. An example process uses high-density interconnects direct-bonded or hybrid bonded between standard interfaces of dielets to create a flexible microelectronics package. In another example, a process uses high-density interconnections direct-bonded between native interconnects of the dielets to create the flexible microelectronics packages, without the standard interfaces.
-
公开(公告)号:US11264357B1
公开(公告)日:2022-03-01
申请号:US17075489
申请日:2020-10-20
Applicant: Invensas Corporation
Inventor: Javier A. Delacruz , Belgacem Haba
IPC: H01L25/065 , H01L23/00 , H01L23/538 , H01L21/68
Abstract: Techniques and arrangements for performing exposure operations on a wafer utilizing both a stepper apparatus and an aligner apparatus. The exposure operations are performed with respect to large composite base dies, e.g., interposers, defined within the wafer, where the interposers will become a part of microelectronic devices by coupling with active dies or microchips. The composite base dies may be coupled to the active dies via “native interconnects” utilizing direct bonding techniques. The stepper apparatus may be used to perform exposure operations on active regions of the composite base dies to provide a fine pitch for the native interconnects, while the aligner apparatus may be used to perform exposure operations on inactive regions of the composite base dies to provide a coarse pitch for interfaces with passive regions of the composite base dies.
-
公开(公告)号:US20210327851A1
公开(公告)日:2021-10-21
申请号:US17362712
申请日:2021-06-29
Applicant: Invensas Corporation
Inventor: Javier A. Delacruz , Belgacem Haba
IPC: H01L25/065 , H01L25/16 , H01L25/00 , H01L23/498 , H05K1/02 , H05K3/46 , H01L23/538
Abstract: Embedded organic interposers for high bandwidth are provided. Example embedded organic interposers provide thick conductors with more dielectric space, and more routing layers of such conductors than conventional interposers, in order to provide high bandwidth transmission capacity over longer spans. The embedded organic interposers provide high bandwidth transmission paths between components such as HBM, HBM2, and HBM3 memory stacks, and other components. To provide the thick conductors and more routing layers for greater transmission capacity, extra space is achieved by embedding the organic interposers in the core of the package. Example embedded organic interposers lower a resistive-capacitive (RC) load of the routing layers to provide an improved data transfer rate of 1 gigabits per second over at least a 6 mm span, for example. The embedded interposers are not limited to use with memory modules.
-
公开(公告)号:US10991676B2
公开(公告)日:2021-04-27
申请号:US16814175
申请日:2020-03-10
Applicant: Invensas Corporation
Inventor: Belgacem Haba , Ilyas Mohammed , Javier A. Delacruz
IPC: H01L21/78 , H01L25/065 , H01L23/00 , H01L25/00
Abstract: A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.
-
公开(公告)号:US10600747B2
公开(公告)日:2020-03-24
申请号:US16217622
申请日:2018-12-12
Applicant: Invensas Corporation
Inventor: Belgacem Haba , Javier A. Delacruz
IPC: H01L23/522 , H01L23/66 , H01L23/498 , H01L25/16 , H01L21/48 , H01L49/02 , H01L23/00
Abstract: Vertical capacitors for microelectronics are provided. An example thin capacitor layer can provide one or numerous capacitors to a semiconductor chip or integrated circuit. In an implementation, a thin capacitor layer of 50-100 μm thickness may have 5000 vertically disposed capacitor plates per linear centimeter, while occupying only a thin slice of the package. Electrodes for each capacitor plate are accessible at multiple surfaces. Electrode density for very fine pitch interconnects can be in the range of 2-200 μm separation between electrodes. A redistribution layer (RDL) may be fabricated on one or both sides of the thin capacitor layer to provide fan-out ball grid arrays that occupy insignificant space. RDLs or through-vias can connect together sets of the interior vertical capacitor plates within a given thin capacitor layer to form various capacitors from the plates to meet the needs of particular chips, dies, integrated circuits, and packages.
-
公开(公告)号:US20190341350A1
公开(公告)日:2019-11-07
申请号:US16515417
申请日:2019-07-18
Applicant: Invensas Corporation
Inventor: Shaowu Huang , Javier A. Delacruz
IPC: H01L23/538 , H01L25/065 , H01L23/498 , H01L23/00 , H01L21/48
Abstract: Dielets on flexible and stretchable packaging for microelectronics are provided. Configurations of flexible, stretchable, and twistable microelectronic packages are achieved by rendering chip layouts, including processors and memories, in distributed collections of dielets implemented on flexible and/or stretchable media. High-density communication between the dielets is achieved with various direct-bonding or hybrid bonding techniques that achieve high conductor count and very fine pitch on flexible substrates. An example process uses high-density interconnects direct-bonded or hybrid bonded between standard interfaces of dielets to create a flexible microelectronics package. In another example, a process uses high-density interconnections direct-bonded between native interconnects of the dielets to create the flexible microelectronics packages, without the standard interfaces.
-
公开(公告)号:US10403577B1
公开(公告)日:2019-09-03
申请号:US15970055
申请日:2018-05-03
Applicant: Invensas Corporation
Inventor: Shaowu Huang , Javier A. Delacruz
IPC: H01J1/62 , H01L23/538 , H01L23/498 , H01L23/00 , H01L21/48 , H01L25/065
Abstract: Dielets on flexible and stretchable packaging for microelectronics are provided. Configurations of flexible, stretchable, and twistable microelectronic packages are achieved by rendering chip layouts, including processors and memories, in distributed collections of dielets implemented on flexible and/or stretchable media. High-density communication between the dielets is achieved with various direct-bonding or hybrid bonding techniques that achieve high conductor count and very fine pitch on flexible substrates. An example process uses high-density interconnects direct-bonded or hybrid bonded between standard interfaces of dielets to create a flexible microelectronics package. In another example, a process uses high-density interconnections direct-bonded between native interconnects of the dielets to create the flexible microelectronics packages, without the standard interfaces.
-
18.
公开(公告)号:US10354945B2
公开(公告)日:2019-07-16
申请号:US15660718
申请日:2017-07-26
Applicant: Invensas Corporation
Inventor: Rajesh Katkar , Min Tao , Javier A. Delacruz , Hoki Kim , Akash Agrawal
IPC: H05K1/11 , H05K1/14 , H05K1/18 , H05K3/34 , H05K3/36 , H01L21/48 , H01L23/00 , H01L23/13 , H01L25/10 , H01L23/498
Abstract: Multi-surface edge pads for vertical mount packages and methods of making package stacks are provided. Example substrates for vertical surface mount to a motherboard have multi-surface edge pads. The vertical mount substrates may be those of a laminate-based FlipNAND. The multi-surface edge pads have cutouts or recesses that expose more surfaces and more surface area of the substrate for bonding with the motherboard. The cutouts in the edge pads allow more solder to be used between the attachment surface of the substrate and the motherboard. The placement and geometry of the resulting solder joint is stronger and has less internal stress than conventional solder joints for vertical mounting. In an example process, blind holes can be drilled into a thickness of a substrate, and the blind holes plated with metal. The substrate can be cut in half though the plated holes to provide two substrates with plated multi-surface edge pads including the cutouts for mounting to the motherboard.
-
公开(公告)号:US10290612B1
公开(公告)日:2019-05-14
申请号:US15993271
申请日:2018-05-30
Applicant: Invensas Corporation
Inventor: Belgacem Haba , Ilyas Mohammed , Javier A. Delacruz
IPC: H01L23/544 , H01L25/065 , H01L23/00 , H01L25/00 , H01L21/78
Abstract: A three-dimensional stacking technique performed in a wafer-to-wafer fashion reducing the machine movement in production. The Wafers are processed with metallic traces and stacked before dicing into separate die stacks. The traces of each layer of the stacks are interconnected via electroless plating.
-
20.
公开(公告)号:US20180240773A1
公开(公告)日:2018-08-23
申请号:US15959619
申请日:2018-04-23
Applicant: Invensas Corporation
Inventor: Javier A. Delacruz , Abiola Awujoola , Ashok S. Prabhu , Christopher W. Lattin , Zhuowen Sun
IPC: H01L23/00 , H05K1/02 , H01L23/498 , H01L25/065 , H01L23/31 , H01L25/16
CPC classification number: H01L24/49 , H01L23/3121 , H01L23/49838 , H01L23/552 , H01L24/17 , H01L24/48 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/16 , H01L25/50 , H01L2224/04042 , H01L2224/11334 , H01L2224/16145 , H01L2224/16227 , H01L2224/17051 , H01L2224/32145 , H01L2224/32225 , H01L2224/48108 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/49109 , H01L2224/73204 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/96 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/1023 , H01L2924/00014 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/3025 , H05K1/0284 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
Abstract: In a vertically integrated microelectronic package, a first microelectronic device is coupled to an upper surface of a circuit platform in a wire bond-only surface area thereof. Wire bond wires are coupled to and extends away from an upper surface of the first microelectronic device. A second microelectronic device in a face-down orientation is coupled to upper ends of the wire bond wires in a surface mount-only area. The second microelectronic device is located above and at least partially overlaps the first microelectronic device. A protective layer is disposed over the circuit platform and the first microelectronic device. An upper surface of the protective layer has the surface mount-only area. The upper surface of the protective layer has the second microelectronic device disposed thereon in the face-down orientation in the surface mount-only area for coupling to the upper ends of the first wire bond wires.
-
-
-
-
-
-
-
-
-