Abstract:
A micromechanical component having a fixing point and a seismic weight, which is connected to the fixing point by at least one spring and is made at least partially out of a first material, the first material being a semiconductor material, the seismic weight being additionally made out of at least one second material, and the second material having a higher density than the first material. In addition, a manufacturing method for a micromechanical component is provided, having the steps of forming a seismic weight at least partially out of a first material, the first material being a semiconductor material, connecting the seismic weight to a fixing point of the micromechanical component, using at least one spring, and forming the seismic weight from the first material and at least one second material, which has a higher density than the first material.
Abstract:
A micromechanical component includes a first space in which a first sensor is situated and a second space in which a second sensor is situated, different pressures prevailing in the first and second spaces, one of the two spaces extending via a third space to a first lattice structure which is situated in an edge region of the component and is essentially hermetically sealed.
Abstract:
A method for establishing and closing at least one trench of a semiconductor component, in particular a micromechanical or electrical semiconductor component, having the following steps: applying at least one metal layer over the trench to be formed; forming a lattice having lattice openings in the at least one metal layer over the trench to be formed; forming the trench below the metal lattice, and closing the lattice openings over the trench.
Abstract:
A method for manufacturing a micromechanical structure, and a micromechanical structure. The micromechanical structure encompasses a first micromechanical functional layer, made of a first material, that comprises a buried conduit having a first end and a second end; a micromechanical sensor structure having a cap in a second micromechanical functional layer that is disposed above the first micromechanical functional layer; an edge region in the second micromechanical functional layer, such that the edge region surrounds the sensor structure and defines an inner side containing the sensor structure and an outer side facing away from the sensor structure; such that the first end is located on the outer side and the second end on the inner side.
Abstract:
A micromechanical acceleration sensor includes a substrate with a substrate surface arranged in one plane, a first counter-electrode arranged on the substrate surface, a second counter-electrode arranged on the substrate surface, and a rocking mass arranged above the first counter-electrode and the second counter-electrode. The rocking mass is in this case connected to the substrate via a torsion spring which permits tilting of the rocking mass about an axis of rotation. Further provided are a first compensation counter-electrode arranged on the substrate surface and a second compensation counter-electrode arranged on the substrate surface. In addition, a first compensation electrode is arranged above the first compensation counter-electrode and a second compensation electrode is arranged above the second compensation counter-electrode.
Abstract:
A sensor includes at least one micro-patterned diode pixel that has a diode implemented in, on, or under a diaphragm, and the diaphragm in turn being implemented above a cavity. The diode is contacted via supply leads that are implemented at least in part in, on, or under the diaphragm, and the diode is implemented in a polycrystalline semiconductor layer. The diode is implemented by way of two low-doped diode regions or at least one low-doped diode region. At least parts of the supply leads are implemented by way of highly doped supply lead regions of the shared polycrystalline semiconductor layer.
Abstract:
A micromechanical component having a fixing point and a seismic weight, which is connected to the fixing point by at least one spring and is made at least partially out of a first material, the first material being a semiconductor material, the seismic weight being additionally made out of at least one second material, and the second material having a higher density than the first material. In addition, a manufacturing method for a micromechanical component is provided, having the steps of forming a seismic weight at least partially out of a first material, the first material being a semiconductor material, connecting the seismic weight to a fixing point of the micromechanical component, using at least one spring, and forming the seismic weight from the first material and at least one second material, which has a higher density than the first material.
Abstract:
A simple to implement contacting variant makes it possible to create a reliable electrical connection between the sensor element and the evaluation electronics of a pressure sensor, including at least one media-resistant sensor element, evaluation electronics in the form of at least one additional component connected electrically to the sensor element, and a multipart housing, the sensor element being situated in a first housing area having at least one pressure connection, and the evaluation electronics being situated in a second sealed housing area which is separated from the first housing area by a separating wall. The electrical connection between the sensor element and the evaluation electronics is implemented in the form of media-resistant bonding wires which are guided from the first into the second housing area through the bonded joint area between the separating wall and an additional housing part.
Abstract:
A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.
Abstract:
A spacer for maintaining separation between adjacent spinous processes having a first and second end support, a connecting member, and a central member positioned between the first and second end supports. The spacer is adjustable between a collapsed configuration and an expanded configuration such that when the connection member is pulled to bring the first and second end supports closer together, the central member expands into the expanded configuration to contact and support adjacent spinous processes.