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11.发明申请BIT PATTERNED MEDIA TEMPLATE INCLUDING ALIGNMENT MARK AND METHOD OF USING SAME 审中-公开位图形媒体模板，包括对齐标记及其使用方法公开(公告)号：US20170023866A1
公开(公告)日：2017-01-26
申请号：US15289505
申请日：2016-10-10
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： HongYing Wang , Kim Y. Lee , Yautzong Hsu , Nobuo Kurataka , Gennady Gauzner , Shuaigang Xiao
IPC: G03F7/20
CPC classification number: G03F7/70141 , G03F7/0002 , G03F9/7042 , G03F9/7076 , G11B5/855
Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
Abstract translation: 公开了一种方法，其包括在衬底中形成至少一个衬底对准标记和至少一个光刻对准标记; 在所述基板上形成种子层; 以及在所述种子层中形成引导图案和至少一个引导图案对准标记，其中所述至少一个引导图案对准标记形成在所述至少一个基板对准标记上。 所述方法还包括确定所述至少一个引导图案对准标记相对于所述至少一个基板对准标记的对准误差; 以及在所述基板的至少一个区域上构图特征，其中所述特征基于所述至少一个光刻对准标记和所述对准误差位于所述基板上。
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公开(公告)号：US20160266493A1
公开(公告)日：2016-09-15
申请号：US15161097
申请日：2016-05-20
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC: G03F7/09
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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公开(公告)号：US10828666B2
公开(公告)日：2020-11-10
申请号：US15432890
申请日：2017-02-14
Applicant: Seagate Technology LLC
Inventor： Sang-Min Park , Nobuo Kurataka , Gennady Gauzner
IPC: B05D3/12 , G03F7/00 , B82Y10/00 , B82Y40/00 , B29C33/62 , B29C59/02 , B05D1/26 , B05D3/10 , B29L9/00 , B29L31/00
Abstract: A pattern imprint template incudes a patterned recesses and a layer formed over the patterned recesses. The pattern recesses form a pattern in a resist when brought in contact with a substrate with a resist thereon. The layer formed over the patterned recesses has a first surface energy. The first surface energy is lower in comparison to a second surface energy of the substrate with the resist thereon. The lower first surface energy in comparison to the second surface energy of the substrate avoids trapping gas in the resist by pushing gas toward the imprint template for venting through the patterned recesses.
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公开(公告)号：US09964855B2
公开(公告)日：2018-05-08
申请号：US15289505
申请日：2016-10-10
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： HongYing Wang , Kim Y. Lee , Yautzong Hsu , Nobuo Kurataka , Gennady Gauzner , Shuaigang Xiao
CPC classification number: G03F7/70141 , G03F7/0002 , G03F9/7042 , G03F9/7076 , G11B5/855
Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
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公开(公告)号：US20160168723A1
公开(公告)日：2016-06-16
申请号：US15052701
申请日：2016-02-24
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
IPC: C23F4/00
CPC classification number: C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
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Patent Agency Ranking
公开(公告)号：US09809887B2
公开(公告)日：2017-11-07
申请号：US15052701
申请日：2016-02-24
Applicant: Seagate Technology LLC
Inventor： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
CPC classification number: C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
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公开(公告)号：US09797924B2
公开(公告)日：2017-10-24
申请号：US14783403
申请日：2013-04-17
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Gennady Gauzner , Zhaoning Yu , Nobuo Kurataka , David S. Kuo , Kim Y Lee , Yautzong Hsu , Hong Ying Wang
CPC classification number: G01Q40/02 , G01N21/01 , G01N2201/13 , G01Q40/00 , G03F7/0002 , H01J37/261 , H01J37/263 , H01J2237/2602 , H01J2237/2826
Abstract: Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece. Also provided herein is a method, including providing a lithographic calibration standard having a functional layer to an analytical apparatus, wherein the functional layer has a composition characteristic of a workpiece of the analytical apparatus; providing calibration standard specifications to a computer interfaced with the analytical apparatus; and calibrating the analytical apparatus in accordance with calibration standard readings and the calibration standard specifications.
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公开(公告)号：US20170157643A1
公开(公告)日：2017-06-08
申请号：US15432890
申请日：2017-02-14
Applicant: Seagate Technology LLC
Inventor： Sang-Min Park , Nobuo Kurataka , Gennady Gauzner
Abstract: A pattern imprint template incudes a patterned recesses and a layer formed over the patterned recesses. The pattern recesses form a pattern in a resist when brought in contact with a substrate with a resist thereon. The layer formed over the patterned recesses has a first surface energy. The first surface energy is lower in comparison to a second surface energy of the substrate with the resist thereon. The lower first surface energy in comparison to the second surface energy of the substrate avoids trapping gas in the resist by pushing gas toward the imprint template for venting through the patterned recesses.
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19.发明授权Bit patterned media template including alignment mark and method of using same 有权包括对准标记的位图案化媒体模板及其使用方法公开(公告)号：US09466324B2
公开(公告)日：2016-10-11
申请号：US14068050
申请日：2013-10-31
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： HongYing Wang , Kim Y Lee , Yautzong Hsu , Nobuo Kurataka , Gennady Gauzner , Shuaigang Xiao
CPC classification number: G03F7/70141 , G03F7/0002 , G03F9/7042 , G03F9/7076 , G11B5/855
Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.
Abstract translation: 公开了一种方法，其包括在衬底中形成至少一个衬底对准标记和至少一个光刻对准标记; 在所述基板上形成种子层; 以及在所述种子层中形成引导图案和至少一个引导图案对准标记，其中所述至少一个引导图案对准标记形成在所述至少一个基板对准标记上。 所述方法还包括确定所述至少一个引导图案对准标记相对于所述至少一个基板对准标记的对准误差; 以及在所述基板的至少一个区域上构图特征，其中所述特征基于所述至少一个光刻对准标记和所述对准误差位于所述基板上。
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公开(公告)号：US20150266233A1
公开(公告)日：2015-09-24
申请号：US14221165
申请日：2014-03-20
Applicant: SEAGATE TECHNOLOGY LLC
Inventor： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
CPC classification number: C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
Abstract translation: 本文提供了一种包括基板的装置; 覆盖衬底的蚀刻停止层，其中蚀刻停止层基本上抵抗蚀刻条件; 以及覆盖在蚀刻停止层上的图案层，其中所述图案化层对于蚀刻条件基本不稳定，并且其中所述图案化层包括多个特征，所述特征包括高特征密度区域和低特征密度区域之间的基本一致的特征轮廓。
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