公开(公告)号：US09502303B2

公开(公告)日：2016-11-22

申请号：US14682265

申请日：2015-04-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Ju Li ,  Kuo-Chin Hung ,  Po-Cheng Huang ,  Yu-Ting Li ,  Wu-Sian Sie ,  Chun-Tsen Lu ,  Wen-Chin Lin ,  Fu-Shou Tsai

IPC: H01L21/768 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/285

CPC classification number: H01L21/823475 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32133 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/823871

Abstract: A method for manufacturing a semiconductor device is provided. A substrate with an insulation formed thereon is provided, wherein the insulation has plural trenches, and the adjacent trenches are spaced apart from each other. A barrier layer is formed on an upper surface of the insulation and in sidewalls of the trenches, and the barrier layer comprises overhung portions corresponding to the trenches. A seed layer is formed on the barrier layer. Then, an upper portion of the seed layer formed on an upper surface of the barrier layer is removed. An upper portion of the barrier layer is removed for exposing the upper surface of the insulation. Afterwards, the conductors are deposited along the seed layer for filling up the trenches, wherein the top surfaces of the conductors are substantially aligned with the upper surface of the insulation.

Abstract translation: 提供一种制造半导体器件的方法。 提供其上形成有绝缘体的基板，其中绝缘体具有多个沟槽，并且相邻的沟槽彼此间隔开。 在绝缘体的上表面和沟槽的侧壁中形成阻挡层，并且阻挡层包括对应于沟槽的悬垂部分。 种子层形成在阻挡层上。 然后，除去形成在阻挡层的上表面上的种子层的上部。 去除阻挡层的上部以暴露绝缘体的上表面。 之后，导体沿种子层沉积以填充沟槽，其中导体的顶表面基本上与绝缘体的上表面对齐。

公开(公告)号：US20160300765A1

公开(公告)日：2016-10-13

申请号：US14682265

申请日：2015-04-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Ju Li ,  Kuo-Chin Hung ,  Po-Cheng Huang ,  Yu-Ting Li ,  Wu-Sian Sie ,  Chun-Tsen Lu ,  Wen-Chin Lin ,  Fu-Shou Tsai

IPC: H01L21/8234 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/823475 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/32133 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/823871

Abstract: A method for manufacturing a semiconductor device is provided. A substrate with an insulation formed thereon is provided, wherein the insulation has plural trenches, and the adjacent trenches are spaced apart from each other. A barrier layer is formed on an upper surface of the insulation and in sidewalls of the trenches, and the barrier layer comprises overhung portions corresponding to the trenches. A seed layer is formed on the barrier layer. Then, an upper portion of the seed layer formed on an upper surface of the barrier layer is removed. An upper portion of the barrier layer is removed for exposing the upper surface of the insulation. Afterwards, the conductors are deposited along the seed layer for filling up the trenches, wherein the top surfaces of the conductors are substantially aligned with the upper surface of the insulation.

Abstract translation: 提供一种制造半导体器件的方法。 提供其上形成有绝缘体的基板，其中绝缘体具有多个沟槽，并且相邻的沟槽彼此间隔开。 在绝缘体的上表面和沟槽的侧壁中形成阻挡层，并且阻挡层包括对应于沟槽的悬垂部分。 种子层形成在阻挡层上。 然后，除去形成在阻挡层的上表面上的种子层的上部。 去除阻挡层的上部以暴露绝缘体的上表面。 之后，导体沿种子层沉积以填充沟槽，其中导体的顶表面基本上与绝缘体的上表面对齐。

公开(公告)号：US20250008743A1

公开(公告)日：2025-01-02

申请号：US18885727

申请日：2024-09-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Ju Li ,  Tai-Cheng Hou ,  Hsin-Jung Liu ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Chau-Chung Hou ,  Yu-Lung Shih ,  Ang Chan ,  Chih-Yueh Li ,  Chun-Tsen Lu

IPC: H10B61/00 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H10N50/01 ,  H10N50/80

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer. Preferably, the first ULK dielectric layer includes a first thickness, the passivation layer between the first MTJ and the second MTJ includes a second thickness, the passivation layer on top of the first MTJ includes a third thickness, and the first thickness is greater than the second thickness

公开(公告)号：US20230320229A1

公开(公告)日：2023-10-05

申请号：US18195383

申请日：2023-05-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Tai-Cheng Hou ,  Wei-Xin Gao ,  Fu-Yu Tsai ,  Chin-Yang Hsieh ,  Chen-Yi Weng ,  Jing-Yin Jhang ,  Bin-Siang Tsai ,  Kun-Ju Li ,  Chih-Yueh Li ,  Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Yu-Tsung Lai ,  Wei-Hao Huang

IPC: H10N50/10 ,  H01L21/768 ,  H01L21/762 ,  H10N50/80

CPC classification number: H10N50/10 ,  H01L21/762 ,  H01L21/76802 ,  H10N50/80 ,  H10N35/01

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and form a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

公开(公告)号：US11778922B2

公开(公告)日：2023-10-03

申请号：US17533003

申请日：2021-11-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Lin Wang ,  Tai-Cheng Hou ,  Wei-Xin Gao ,  Fu-Yu Tsai ,  Chin-Yang Hsieh ,  Chen-Yi Weng ,  Jing-Yin Jhang ,  Bin-Siang Tsai ,  Kun-Ju Li ,  Chih-Yueh Li ,  Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Yu-Tsung Lai ,  Wei-Hao Huang

IPC: H01L41/47 ,  H10N50/10 ,  H01L21/768 ,  H01L21/762 ,  H10N50/80 ,  H10N35/01

CPC classification number: H10N50/10 ,  H01L21/762 ,  H01L21/76802 ,  H10N50/80 ,  H10N35/01

Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

公开(公告)号：US20230200088A1

公开(公告)日：2023-06-22

申请号：US18113070

申请日：2023-02-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Ju Li ,  Tai-Cheng Hou ,  Hsin-Jung Liu ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Chau-Chung Hou ,  Yu-Lung Shih ,  Ang Chan ,  Chih-Yueh Li ,  Chun-Tsen Lu

IPC: H10B61/00 ,  H01F41/34 ,  G11C11/16 ,  H01F10/32 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10B61/00 ,  H01F41/34 ,  G11C11/161 ,  H01F10/3254 ,  H10N50/01 ,  H10N50/80

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer. Preferably, the first ULK dielectric layer includes a first thickness, the passivation layer between the first MTJ and the second MTJ includes a second thickness, the passivation layer on top of the first MTJ includes a third thickness, and the second thickness is greater than the third thickness

公开(公告)号：US11482666B2

公开(公告)日：2022-10-25

申请号：US17023382

申请日：2020-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Jung Liu ,  Chau-Chung Hou ,  Ang Chan ,  Kun-Ju Li ,  Wen-Chin Lin

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.

公开(公告)号：US20220085284A1

公开(公告)日：2022-03-17

申请号：US17023382

申请日：2020-09-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Jung Liu ,  Chau-Chung Hou ,  Ang Chan ,  Kun-Ju Li ,  Wen-Chin Lin

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.

公开(公告)号：US10103034B2

公开(公告)日：2018-10-16

申请号：US15678134

申请日：2017-08-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Chieh Hsu ,  Fu-Shou Tsai ,  Yu-Ting Li ,  Yi-Liang Liu ,  Kun-Ju Li

IPC: H01L21/3105 ,  H01L29/06 ,  H01L29/78

Abstract: A method of planarizing a substrate surface is disclosed. A substrate having a major surface of a material layer is provided. The major surface of the material layer comprises a first region with relatively low removal rate and a second region of relatively high removal rate. A photoresist pattern is formed on the material layer. The photoresist pattern masks the second region, while exposes at least a portion of the first region. At least a portion of the material layer not covered by the photoresist pattern is etched away. A polish stop layer is deposited on the material layer. A cap layer is deposited on the polish stop layer. A chemical mechanical polishing (CMP) process is performed to polish the cap layer.

公开(公告)号：US20180138125A1

公开(公告)日：2018-05-17

申请号：US15853978

申请日：2017-12-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Ju Li ,  Kuo-Chin Hung ,  Min-Chuan Tsai ,  Wei-Chuan Tsai ,  Yi-Han Liao ,  Chun-Tsen Lu ,  Fu-Shou Tsai ,  Li-Chieh Hsu

IPC: H01L23/528 ,  H01L29/417 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/41758 ,  H01L29/66628 ,  H01L29/7833

Abstract: A layout structure including a conductive structure is provided. The layout structure includes a dielectric layer formed on a substrate and a conductive structure formed in the dielectric layer. And the conductive structure further includes a barrier layer, a metal layer formed within the barrier layer, and a high resistive layer sandwiched in between the barrier layer and the metal layer.