公开(公告)号：US20160155629A1

公开(公告)日：2016-06-02

申请号：US14899552

申请日：2014-06-25

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/02 ,  C23C16/56 ,  H01L21/324

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Abstract translation: 公开了通过使用原子层沉积（ALD）在硅衬底上生长氮化镓层，然后快速热退火来制造氮化镓器件的装置制造方法和装置。 氮化镓直接生长在硅或硅衬底上生长的氮化铝阻挡层上。 通过快速热退火对一层或两层进行热处理。 优选地，ALD方法使用低于550℃的反应温度，并且优选低于350℃。快速热退火步骤将涂层表面的温度升高至550至1500℃的温度小于12毫秒。

公开(公告)号：US09266437B2

公开(公告)日：2016-02-23

申请号：US13933355

申请日：2013-07-02

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: G21H1/06 ,  G21H1/02 ,  B60L11/18 ,  G21H1/00 ,  B60L11/00

CPC classification number: B60L11/18 ,  B60L11/002 ,  G21H1/00 ,  G21H1/06

Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

Abstract translation: 公开了用于运输设备和应用的贝塔伏特电源，其中所述设备具有同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率以在其使用寿命期间操作运输装置。

公开(公告)号：US20150041431A1

公开(公告)日：2015-02-12

申请号：US13961655

申请日：2013-08-07

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/0273 ,  G03F7/168 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  H01L21/67069

Abstract: Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.

公开(公告)号：US08872408B2

公开(公告)日：2014-10-28

申请号：US13863283

申请日：2013-04-15

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: G21H1/00 ,  G21H1/02 ,  G21H1/06

CPC classification number: G21H1/02 ,  G21H1/06

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract translation: 用于移动设备和移动应用的贝塔伏特电源包括同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率来在其使用寿命期间操作移动设备。

公开(公告)号：US08865603B2

公开(公告)日：2014-10-21

申请号：US13909542

申请日：2013-06-04

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/66 ,  H01L21/324 ,  B23K26/00 ,  B23K26/06 ,  H01L21/268 ,  B23K26/03 ,  H01L21/263 ,  B23K26/08 ,  B23K26/073 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/324 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0608 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/082 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/268 ,  H01L21/67115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract translation: 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μs至约100μs的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。

公开(公告)号：US20180226535A1

公开(公告)日：2018-08-09

申请号：US15875484

申请日：2018-01-19

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk

IPC: H01L33/00 ,  H01S5/30 ,  H01L21/66

CPC classification number: H01L33/0066 ,  H01L21/02 ,  H01L22/10 ,  H01L22/20 ,  H01L33/0079 ,  H01S5/3013

Abstract: Methods of forming product wafers having semiconductor light-emitting devices to improve emission wavelength uniformity include either estimating or measuring a spatial variation in the emission wavelengths of the light-emitting devices of an already formed product wafer. The methods can also include defining a corrective temperature distribution for feeding back to the upstream process to reduce variations in the emission wavelength when forming new product wafers. The method can further includes applying the corrective temperature distribution when forming the new product wafers so that the new product wafers have a higher yield in forming the light-emitting devices than the already formed product wafer.

公开(公告)号：US09768016B2

公开(公告)日：2017-09-19

申请号：US14899552

申请日：2014-06-25

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  B23K26/12 ,  C23C16/22 ,  C23C16/56 ,  H01L21/268 ,  H01L21/324 ,  H01L29/20 ,  B23K103/00

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170178980A1

公开(公告)日：2017-06-22

申请号：US15364309

申请日：2016-11-30

Applicant: Ultratech, Inc.

Inventor： David M. Owen ,  Byoung-Ho Lee ,  Eric Bouche ,  Andrew M. Hawryluk

IPC: H01L21/66 ,  G01B11/24 ,  G01B11/30 ,  G01N21/95 ,  G01N21/88

Abstract: Full-wafer inspection methods for a semiconductor wafer are disclosed. One method includes making a measurement of a select measurement parameter simultaneously over measurement sites of the entire surface of the semiconductor wafer at a maximum measurement-site pixel density ρmax to obtain measurement data, wherein the total number of measurement-site pixels obtained at the maximum measurement-site pixel density ρmax is between 104 and 108. The method also includes defining a plurality of zones of the surface of the semiconductor wafer, with each of the zones having a measurement-site pixel density ρ, with at least two of the zones having a different sized measurement-site pixel and thus a different measurement-site pixel density ρ. The method also includes processing the measurement data based on the plurality of zones and the corresponding measurement-site pixel densities ρ. The processed measurement data can be used for statistical process control of the process used to form devices on the semiconductor wafer.

公开(公告)号：US20170162392A1

公开(公告)日：2017-06-08

申请号：US15437055

申请日：2017-02-20

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/268 ,  B23K26/066 ,  B23K26/352 ,  H01L21/263 ,  B23K26/00

CPC classification number: H01L21/268 ,  B23K26/0626 ,  B23K26/066 ,  B23K26/352 ,  B23K2103/56 ,  H01L21/2636

Abstract: High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO2-based line-forming system configured to form at a wafer surface a first line image having between 2000 W and 3000 W of optical power. The line image is scanned over the wafer surface to locally raise the temperature up to a defect anneal temperature. The system can include a visible-wavelength diode-based line-forming system that forms a second line image that can scan with the first line image to locally raise the wafer surface temperature from the defect anneal temperature to a spike anneal temperature. Use of the visible wavelength for the spike annealing reduces adverse pattern effects and improves temperature uniformity and thus annealing uniformity.

公开(公告)号：US09666432B2

公开(公告)日：2017-05-30

申请号：US14909004

申请日：2014-09-17

Applicant: Ultratech, Inc.

Inventor： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC: H01L29/15 ,  H01L31/0256 ,  H01L21/02 ,  C23C16/22 ,  H01L29/20 ,  H01L21/268 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  B23K103/00

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.