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    High-efficiency line-forming optical systems and methods using a serrated spatial filter
    13.
    发明申请
    High-efficiency line-forming optical systems and methods using a serrated spatial filter 审中-公开
    高效率线形光学系统和使用锯齿状空间滤光片的方法

    公开(公告)号：US20170025287A1

    公开(公告)日：2017-01-26

    申请号：US15210399

    申请日：2016-07-14

    Applicant: Ultratech, Inc.

    Inventor： Serguei Anikitchev

    IPC: H01L21/324 ,  H01L21/322 ,  H01L21/268 ,  G02B27/09 ,  G02B17/08

    CPC classification number: G02B27/0983 ,  G02B19/0004 ,  G02B19/0047 ,  G02B27/0927 ,  G02B27/0988 ,  H01L21/268

    Abstract: High-efficiency line-forming optical systems and methods that employ a serrated aperture are disclosed. The line-forming optical system includes a laser source, a beam conditioning optical system, a first aperture device, and a relay optical system that includes a second aperture device having the serrated aperture. The serrated aperture is defined by opposing serrated blades configured to reduce intensity variations in a line image formed at an image plane as compared to using an aperture having straight-edged blades.

    Abstract translation: 公开了使用锯齿形孔的高效线形成光学系统和方法。 线形光学系统包括激光源，光束调节光学系统，第一光圈装置和中继光学系统，其包括具有锯齿形孔径的第二孔径装置。 与使用具有直边刀片的孔相比，锯齿状孔径由相对的锯齿形刀片限定，其被配置为减少在图像平面上形成的线图像中的强度变化。

    Laser-Based Systems and Methods for Melt-Processing of Metal Layers in Semiconductor Manufacturing
    15.
    发明申请
    Laser-Based Systems and Methods for Melt-Processing of Metal Layers in Semiconductor Manufacturing 审中-公开

    公开(公告)号：US20190035682A1

    公开(公告)日：2019-01-31

    申请号：US16036993

    申请日：2018-07-17

    Applicant: Ultratech, Inc.

    Inventor： Serguei Anikitchev ,  Andrew M. Hawryluk

    IPC: H01L21/768 ,  H01L21/66 ,  H01L21/67

    Abstract: Methods disclosed herein include scanning a focus spot formed by a laser beam over either a metal layer or IC structures that include a metal and a non-metal. The focus spot is scanned over a scan path that includes scan path segments that partially overlap. The focus spot has an irradiance and a dwell time selected to locally melt the metal layer or locally melt the metal of the IC structures without melting the non-metal. This results in rapid melting and recrystallization of the metal, which decreases the resistivity of the metal and results in improved performance of the IC chips being fabricated. Also disclosed is an example laser melt system for carrying out methods disclosed herein is also disclosed.

    High-efficiency line-forming optical systems and methods for defect annealing and dopant activation
    16.
    发明申请
    High-efficiency line-forming optical systems and methods for defect annealing and dopant activation 有权
    高效率线形成光学系统和缺陷退火和掺杂剂激活的方法

    公开(公告)号：US20160148810A1

    公开(公告)日：2016-05-26

    申请号：US14929186

    申请日：2015-10-30

    Applicant: Ultratech, Inc.

    Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

    IPC: H01L21/268 ,  B23K26/00 ,  B23K26/06 ,  H01L21/263

    CPC classification number: H01L21/268 ,  B23K26/0626 ,  B23K26/066 ,  B23K26/352 ,  B23K2103/56 ,  H01L21/2636

    Abstract: High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO2-based line-forming system configured to form at a wafer surface a first line image having between 2000 W and 3000 W of optical power. The line image is scanned over the wafer surface to locally raise the temperature up to a defect anneal temperature. The system can include a visible-wavelength diode-based line-forming system that forms a second line image that can scan with the first line image to locally raise the wafer surface temperature from the defect anneal temperature to a spike anneal temperature. Use of the visible wavelength for the spike annealing reduces adverse pattern effects and improves temperature uniformity and thus annealing uniformity.

    Abstract translation: 公开了用于缺陷退火和掺杂剂激活的高效线形成光学系统和方法。 该系统包括基于CO 2的线形成系统，其被配置为在晶片表面处形成具有2000W和3000W光功率的第一线图像。 在晶片表面上扫描线图像以局部地将温度升高到缺陷退火温度。 该系统可以包括基于可见光波长二极管的线形成系统，其形成可以利用第一线图像扫描以将晶片表面温度从缺陷退火温度局部升高到尖峰退火温度的第二线图像。 使用可见波长进行尖峰退火可减少不利的图案效应，并提高温度均匀性，从而降低退火均匀性。

    Laser annealing systems and methods with ultra-short dwell times
    17.
    发明申请
    Laser annealing systems and methods with ultra-short dwell times 有权
    具有超短停留时间的激光退火系统和方法

    公开(公告)号：US20160086832A1

    公开(公告)日：2016-03-24

    申请号：US14490446

    申请日：2014-09-18

    Applicant: Ultratech, Inc.

    Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

    IPC: H01L21/67

    CPC classification number: H01L21/67115 ,  B23K26/00 ,  B23K26/034 ,  B23K26/08 ,  B23K2103/56 ,  H01L21/00 ,  H01L21/02675 ,  H01L21/268 ,  H01L21/67248

    Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

    Abstract translation: 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μs至约100μs的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。

    Laser spike annealing using fiber lasers
    19.
    发明申请
    Laser spike annealing using fiber lasers 有权
    激光尖峰退火采用光纤激光器

    公开(公告)号：US20150179449A1

    公开(公告)日：2015-06-25

    申请号：US14497006

    申请日：2014-09-25

    Applicant: Ultratech, Inc.

    Inventor： Serguei Anikitchev

    IPC: H01L21/02

    CPC classification number: H01L21/02683 ,  B23K26/0608 ,  B23K26/0736 ,  H01L21/02532 ,  H01L21/268 ,  H01L21/324

    Abstract: The disclosure is directed to laser spike annealing using fiber lasers. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length LA along the long axis; heating at least a region of the wafer to a pre-anneal temperature TPA; and scanning the elongate annealing image over the wafer surface and within the pre-heat region so that the annealing image has a dwell time tD in the range 30 ns≦tD≦10 ms and raises the wafer surface temperature to an annealing temperature TA.

    Abstract translation: 本公开涉及使用光纤激光器的激光尖峰退火。 该方法包括通过以下方式执行晶片表面的激光尖峰退火：通过多个光纤激光系统产生相应的CW输出辐射束，其在晶片表面部分重叠以形成具有长轴和长度LA的细长退火图像 长轴; 将晶片的至少一个区域加热到预退火温度TPA; 并且在晶片表面和预热区域内扫描细长退火图像，使得退火图像的停留时间tD在30ns＆amp; tl和nlE; 10ms的范围内，并将晶片表面温度升高到退火温度TA。

    Systems and methods for measuring high-intensity light beams
    20.
    发明授权
    Systems and methods for measuring high-intensity light beams 有权
    用于测量高强度光束的系统和方法

    公开(公告)号：US08988674B2

    公开(公告)日：2015-03-24

    申请号：US13953423

    申请日：2013-07-29

    Applicant: Ultratech, Inc.

    Inventor： Serguei Anikitchev ,  David Gaines

    IPC: G01J1/04

    CPC classification number: G01J1/0407 ,  G01J1/0414 ,  G01J1/0477 ,  G01J1/4257 ,  G01J2001/0481 ,  G01J2001/4261 ,  G02B5/04 ,  G02B27/108

    Abstract: Systems and methods for measuring an intensity characteristic of a light beam are disclosed. The methods include directing the light beam into a prism assembly that includes a thin prism sandwiched by two transparent plates, and reflecting a portion of the light beam by total-internal-reflection surface to an integrating sphere while transmitting the remaining portion of the light beam through the two transparent plates to a beam dump. The method also includes detecting light captured by the integrating sphere and determining the intensity characteristic from the detected light.

    Abstract translation: 公开了用于测量光束的强度特性的系统和方法。 所述方法包括将光束引导到棱镜组件中，该棱镜组件包括夹在两个透明板之间的薄棱镜，并且将一部分光束由全内反射表面反射到积分球，同时透射光束的剩余部分 通过两个透明板到一个光束转储。 该方法还包括检测由积分球捕获的光并根据检测到的光确定强度特性。

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