公开(公告)号：US20230350287A1

公开(公告)日：2023-11-02

申请号：US17750421

申请日：2022-05-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Su-Yun Fang ,  Chih-Hsien Tang ,  Yi-Lin Tsai

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  H01L21/3086

Abstract: An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.

公开(公告)号：US10714466B1

公开(公告)日：2020-07-14

申请号：US16255786

申请日：2019-01-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Liang Chu ,  Chih-Hsien Tang ,  Yu-Ruei Chen ,  Ya-Huei Tsai ,  Rai-Min Huang ,  Chueh-Fei Tai

IPC: H01L27/22 ,  H01L27/02 ,  G03F1/36 ,  H01L43/12 ,  H01L43/02

Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.

公开(公告)号：US20160314233A1

公开(公告)日：2016-10-27

申请号：US14692723

申请日：2015-04-21

Applicant: United Microelectronics Corp.

Inventor： Harn-Jiunn Wang ,  Kuei-Chun Hung ,  Chih-Hsien Tang ,  Chin-Lung Lin

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466

Abstract: A method of decomposing pattern layout for generating patterns on photomasks is disclosed. The method includes decomposing features of an integrated circuit layout into discrete patterns based on the relation between these features. The features include first features and second features. The first features are then classified into a first feature pattern and a second feature pattern, and the second features are classified into third, fourth, fifth and sixth feature patterns. The spacings of the second features in the fifth and sixth feature patterns are greater than a minimum exposure limits. Finally, the first feature pattern is outputted to a first photomask, the second feature pattern is outputted to a second photomask, the third and fifth feature patterns are outputted to a third photomask, and the fourth and sixth feature patterns are outputted to a fourth photomask.

Abstract translation: 公开了一种分解用于在光掩模上产生图案的图案布局的方法。 该方法包括基于这些特征之间的关系将集成电路布局的特征分解为离散模式。 功能包括第一个功能和第二个功能。 然后将第一特征分类为第一特征图案和第二特征图案，并且将第二特征分类为第三，第四，第五和第六特征图案。 第五和第六特征图案中的第二特征的间距大于最小暴露极限。 最后，将第一特征图案输出到第一光掩模，将第二特征图案输出到第二光掩模，将第三和第五特征图案输出到第三光掩模，并将第四和第六特征图案输出到第四光掩模 。

公开(公告)号：US20230358605A1

公开(公告)日：2023-11-09

申请号：US17751684

申请日：2022-05-24

Applicant: United Microelectronics Corp.

Inventor： Sheng Lung Teng ,  Guo Xin Hu ,  Chih-Hsien Tang

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J2001/4247

Abstract: A matching method of light source parameters includes the following. First light source parameter data of a first exposure machine and second light source parameter data of a second exposure machine corresponding to the first light source parameter data are collected. Whether a second light intensity distribution included in the second light source parameter data meets a first light intensity distribution included in the first light source parameter data is determined. If the second light intensity distribution meets the first light intensity distribution, a simulated exposure process is performed by using the first light source parameter data and the second light source parameter data. Second simulated exposure data obtained by using the second light source parameter data is compared with first simulated exposure data obtained by using the first light source parameter data to determine whether the second simulated exposure data meets the first simulated exposure data.

公开(公告)号：US09672309B2

公开(公告)日：2017-06-06

申请号：US14696498

申请日：2015-04-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Harn-Jiunn Wang ,  Teng-Yao Chang ,  Chin-Lung Lin ,  Chih-Hsien Tang ,  Yao-Jen Fan

IPC: G06F17/50 ,  H01L29/66

CPC classification number: G06F17/5068 ,  H01L29/66795 ,  H01L29/6681

Abstract: A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.

公开(公告)号：US20160275226A1

公开(公告)日：2016-09-22

申请号：US14696498

申请日：2015-04-27

Applicant: United Microelectronics Corp.

Inventor： Harn-Jiunn Wang ,  Teng-Yao Chang ,  Chin-Lung Lin ,  Chih-Hsien Tang ,  Yao-Jen Fan

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  H01L29/66795 ,  H01L29/6681

Abstract: A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.

Abstract translation: 用于生成布局图案的方法包括以下步骤。 提供了包括第一群集区域中的多个第一条纹图案的基本布局图案。 每个第一条纹图案沿第一方向延伸，并且第一条纹图案在第二方向上具有相等的间距。 产生多个锚杆图案。 每个锚杆图案沿第一方向延伸，并且锚杆图案在第二方向上具有相等的间距。 第二方向上的至少一个锚杆图案的边缘分别与两个相邻的第一条纹图案的边缘对齐。 锚杆图案中的至少一个与两个相邻的第一条纹图案之间的第一空间重叠。 在由锚杆图案重叠的第一空间处产生至少一个第一心轴图案，并且将第一心轴图案输出到光掩模。