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    NEMS DEVICES WITH SERIES FERROELECTRIC NEGATIVE CAPACITOR
    11.
    发明申请
    NEMS DEVICES WITH SERIES FERROELECTRIC NEGATIVE CAPACITOR 有权
    带有系列电磁负极电容器的NEMS装置

    公开(公告)号：US20160207761A1

    公开(公告)日：2016-07-21

    申请号：US14701502

    申请日：2015-04-30

    Applicant: Purdue Research Foundation

    Inventor： Muhammad Ashraful Alam ,  Muhammad Masuduzzaman ,  Ankit Jain

    IPC: B81B7/00 ,  H01L29/51 ,  H01L49/02 ,  H01L27/22 ,  H01L29/78 ,  H01L27/115

    CPC classification number: H01L29/515 ,  B81B7/02 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/07 ,  H01G4/38 ,  H01G5/16 ,  H01G5/40 ,  H01G7/06 ,  H01L27/0805 ,  H01L27/11502 ,  H01L27/11585 ,  H01L29/516 ,  H01L29/7842

    Abstract: An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

    Abstract translation: 包括串联连接的至少两个负电容绝缘体的电路，两个负电容绝缘体之一被偏置以产生负电容。 负电容绝缘体中的一个可以包括作为纳米电子技术系统（NEMS）器件的一部分的气隙，并且第二负电容绝缘体包括铁电材料。 负电容绝缘体都可以位于场效应晶体管的沟道和栅极之间。 NEMS装置可以包括可动电极，电介质和固定电极，并且布置成使得可动电极附接到至少两个点并且与电介质和固定电极间隔开，并且铁电电容器电连接到 电极。

    CAPACTITIVE SWITCH, APPARATUS FOR TRANSCEIVING SIGNAL, AND MANUFACTURING METHOD THEREOF
    16.
    发明申请
    CAPACTITIVE SWITCH, APPARATUS FOR TRANSCEIVING SIGNAL, AND MANUFACTURING METHOD THEREOF 有权
    电容开关，收发信号装置及其制造方法

    公开(公告)号：US20140285252A1

    公开(公告)日：2014-09-25

    申请号：US14144095

    申请日：2013-12-30

    Applicant: Huawei Device Co., Ltd.

    Inventor： Xiong Yang ,  Bocheng Cao ,  Lei Wang

    IPC: H01H21/18 ,  H01H11/00

    CPC classification number: B81B3/0072 ,  B81B3/001 ,  B81B2201/014 ,  B81B2201/018 ,  H01G5/16 ,  H01H59/0009

    Abstract: A capacitive switch includes: a first conductive cantilever, a second conductive cantilever, a substrate, a coplanar waveguide arranged on the substrate, the coplanar waveguide includes a first conductor configured to transmit an electrical signal, a second conductor and a third conductor are arranged as ground wires on two sides of the first conductor; an insulation medium layer is arranged on the first conductor, a conducting layer is arranged on the insulation medium layer; the first conductive cantilever is connected to the second conductor by using a first fixed end, the second conductive cantilever is connected to the third conductor by using a second fixed end; when a direct-current signal is transmitted on the capacitive switch, a first free end of the first conductive cantilever and a second free end of the second conductive cantilever contact the conducting layer.

    Abstract translation: 电容开关包括：第一导电悬臂，第二导电悬臂，衬底，布置在衬底上的共面波导，共面波导包括被配置为传输电信号的第一导体，第二导​​体和第三导体被布置为 第一导体两侧接地线; 绝缘介质层布置在第一导体上，导电层设置在绝缘介质层上; 第一导电悬臂通过使用第一固定端连接到第二导体，第二导​​电悬臂通过使用第二固定端连接到第三导体; 当在电容性开关上传输直流信号时，第一导电悬臂的第一自由端和第二导电悬臂的第二自由端接触导电层。

    Electronic device and method of manufacturing the same
    18.
    发明授权
    Electronic device and method of manufacturing the same 有权
    电子设备及其制造方法

    公开(公告)号：US08536963B2

    公开(公告)日：2013-09-17

    申请号：US12783124

    申请日：2010-05-19

    Applicant: Tadashi Nakatani ,  Hiroaki Inoue ,  Hitoshi Yamada ,  Satoshi Ueda

    Inventor： Tadashi Nakatani ,  Hiroaki Inoue ,  Hitoshi Yamada ,  Satoshi Ueda

    IPC: H01H51/22

    CPC classification number: H01H59/0009 ,  B81B7/007 ,  B81B2201/014 ,  H01L2224/16225 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30105

    Abstract: An electronic device includes a substrate, a stationary electrode provided above the substrate, a movable electrode that is provided to face the stationary electrode, a wall portion that is provided on the substrate and surrounds the movable electrode and the stationary electrode, a film member that is fixed to the wall portion and seals space including the movable electrode and the stationary electrode, and a support portion that is provided, on an inner side of the wall portion on the substrate, in addition to the movable electrode and the stationary electrode to support the film member from within the space.

    Abstract translation: 一种电子设备，包括基板，设置在基板上方的固定电极，设置成面向固定电极的可动电极，设置在基板上并围绕可动电极和固定电极的壁部;膜部件， 被固定到壁部分并且密封包括可动电极和固定电极的空间，以及在可移动电极和固定电极之外还设置在基板上的壁部的内侧上的支撑部分 电影会员从空间内。

    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES
    19.
    发明申请
    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES 有权
    微电子机械系统（MEMS）结构和设计结构

    公开(公告)号：US20130156993A1

    公开(公告)日：2013-06-20

    申请号：US13326604

    申请日：2011-12-15

    Applicant: Brian M. CZABAJ ,  David A. DeMUYNCK ,  Anthony K. STAMPER

    Inventor： Brian M. CZABAJ ,  David A. DeMUYNCK ,  Anthony K. STAMPER

    IPC: B32B1/04 ,  C23F1/02 ,  B05D3/10 ,  B05D1/36 ,  G06F17/50 ,  B05D5/12

    CPC classification number: H01L29/84 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2207/015 ,  B81C1/0015 ,  B81C1/00246 ,  G06F17/5068 ,  H01H2057/006

    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting.

    Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括在形成在基底上的牺牲材料上分层金属和绝缘体材料。 该方法还包括掩蔽层状金属和绝缘体材料。 该方法还包括在掩模中形成与牺牲材料重叠的开口。 该方法还包括在单个蚀刻工艺中蚀刻层状金属和绝缘体材料以形成束结构，使得层状金属和绝缘体材料的边缘对准。 该方法还包括通过排气口形成围绕梁结构的空腔。

    HORIZONTAL COPLANAR SWITCHES AND METHODS OF MANUFACTURE
    20.
    发明申请
    HORIZONTAL COPLANAR SWITCHES AND METHODS OF MANUFACTURE 有权
    水平共振开关及其制造方法

    公开(公告)号：US20130153378A1

    公开(公告)日：2013-06-20

    申请号：US13768235

    申请日：2013-02-15

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Felix P. ANDERSON ,  Thomas L. MCDEVITT ,  Anthony K. STAMPER

    IPC: H01H59/00 ,  G06F17/50

    CPC classification number: H01H59/00 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00182 ,  B81C2201/0107 ,  G06F17/5068

    Abstract: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.

    Abstract translation: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一配线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔，使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。

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