公开(公告)号：US20140175645A1

公开(公告)日：2014-06-26

申请号：US13906441

申请日：2013-05-31

Applicant: Dongbu HiTek Co., Ltd.

Inventor： Ki Wan Bang

IPC: H01L23/00

CPC classification number: H01L24/11 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2203/033 ,  B81C1/00182 ,  G01B11/14 ,  H01H1/16 ,  H01H35/02 ,  H01H35/142 ,  H01L24/13 ,  H01L2924/1461 ,  H01L2924/0001

Abstract: Embodiments relate to a method for manufacturing a semiconductor device including at least one of: (1) Forming a lower electrode pattern on a substrate. (2) Forming an etch stop film on/over the lower electrode pattern. (3) Forming a first interlayer insulating layer on/over the etch stop film. (4) Forming an upper electrode pattern on/over the first interlayer insulating layer. (5) Forming a second interlayer insulating layer on/over the upper electrode pattern. (6) Forming an etch blocking layer positioned between the lower electrode pattern and the upper electrode pattern which passes through the second interlayer insulating layer and the first interlayer insulating layer. (7) Forming a cavity which exposes a side of the etch blocking layer by etching the second interlayer insulating layer and the first interlayer insulating layer. (8) Forming a contact ball in the cavity.

Abstract translation: 实施例涉及一种用于制造半导体器件的方法，所述半导体器件包括以下至少一个：（1）在衬底上形成下电极图案。 （2）在下电极图案之上/之上形成蚀刻停止膜。 （3）在蚀刻停止膜上/之上形成第一层间绝缘层。 （4）在第一层间绝缘层上形成上电极图案。 （5）在上电极图案之上/之上形成第二层间绝缘层。 （6）形成位于通过第二层间绝缘层和第一层间绝缘层的下电极图案和上电极图案之间的蚀刻阻挡层。 （7）通过蚀刻第二层间绝缘层和第一层间绝缘层，形成露出蚀刻阻挡层的一侧的空腔。 （8）在空腔中形成接触球。

公开(公告)号：US20140125431A1

公开(公告)日：2014-05-08

申请号：US14071173

申请日：2013-11-04

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H01L41/09 ,  H01G5/18 ,  B81B7/02 ,  H03H9/46

CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

Abstract translation: MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。

公开(公告)号：US08681409B2

公开(公告)日：2014-03-25

申请号：US13566053

申请日：2012-08-03

Applicant: David J. Frank ,  Guy Cohen

Inventor： David J. Frank ,  Guy Cohen

IPC: G02B26/08

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US20140054728A1

公开(公告)日：2014-02-27

申请号：US13591771

申请日：2012-08-22

Applicant: Jeffrey C. Maling ,  Anthony K. Stamper ,  Dana R. DeReus ,  Arthur S. Morris, III

Inventor： Jeffrey C. Maling ,  Anthony K. Stamper ,  Dana R. DeReus ,  Arthur S. Morris, III

IPC: H01L29/84 ,  G06F17/50 ,  H01L21/02

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C1/00333 ,  B81C1/00825 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H1/0036 ,  H01L23/34 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括形成至少一个微机电系统（MEMS）空腔。 用于形成空腔的方法还包括形成至少一个第一尺寸的第一通气孔，其尺寸设计成在密封过程中避免或最小化在梁结构上的材料沉积。 形成空腔的方法还包括形成大于第一尺寸的第二尺寸的至少一个第二通气孔。

公开(公告)号：US08420427B2

公开(公告)日：2013-04-16

申请号：US11492671

申请日：2006-07-25

Applicant: Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Gilbert

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Gilbert

IPC: H01L21/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Methods for Implementation of a Switching Function in a Microscale Device and for Fabrication of a Microscale Switch. According to one embodiment, a method is provided for implementing a switching function in a microscale device. The method can include providing a stationary electrode and a stationary contact formed on a substrate. Further, a movable microcomponent suspended above the substrate can be provided. A voltage can be applied between the between a movable electrode of the microcomponent and the stationary electrode to electrostatically couple the movable electrode with the stationary electrode, whereby the movable component is deflected toward the substrate and a movable contact moves into contact with the stationary contact to permit an electrical signal to pass through the movable and stationary contacts. A current can be applied through the first electrothermal component to produce heating for generating force for moving the microcomponent.

Abstract translation: 用于实现微尺度装置中的切换功能以及用于制造微型开关的方法。 根据一个实施例，提供了一种用于在微型设备中实现切换功能的方法。 该方法可以包括提供固定电极和形成在基板上的固定触点。 此外，可以提供悬浮在基板上方的可移动微型部件。 可以在微型组件的可动电极和固定电极之间施加电压，以使可动电极与固定电极静电耦合，由此可动部件朝向基板偏转，并且可动触点移动到与固定触点接触 允许电信号通过可移动和固定触点。 可以通过第一电热部件施加电流以产生用于产生用于移动微型部件的力的加热。

公开(公告)号：US20130082800A1

公开(公告)日：2013-04-04

申请号：US13248787

申请日：2011-09-29

Applicant: Ahmadreza Rofougaran ,  Arya Reza Behzad ,  Sam Ziqun Zhao ,  Jesus Alfonso Castaneda ,  Michael Boers

Inventor： Ahmadreza Rofougaran ,  Arya Reza Behzad ,  Sam Ziqun Zhao ,  Jesus Alfonso Castaneda ,  Michael Boers

IPC: H01P3/00

CPC classification number: H01P3/00 ,  B81B7/008 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/03 ,  H01H59/0009 ,  H01L23/5222 ,  H01L23/66 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L41/0986 ,  H01L2224/16225 ,  H01L2225/06517 ,  H01L2225/06531 ,  H01L2225/06572 ,  H01L2924/1461 ,  H01P1/06 ,  H01P1/18 ,  H01P1/182 ,  H01P3/121 ,  H01Q13/20 ,  H01L2924/00

Abstract: Methods and apparatus are disclosed for wirelessly communicating among integrated circuits and/or functional modules within the integrated circuits. A semiconductor device fabrication operation uses a predetermined sequence of photographic and/or chemical processing steps to form one or more functional modules onto a semiconductor substrate. The functional modules are coupled to an integrated waveguide that is formed onto the semiconductor substrate and/or attached thereto to form an integrated circuit. The functional modules communicate with each other as well as to other integrated circuits using a multiple access transmission scheme via the integrated waveguide. One or more integrated circuits may be coupled to an integrated circuit carrier to form Multichip Module. The Multichip Module may be coupled to a semiconductor package to form a packaged integrated circuit.

Abstract translation: 公开了用于在集成电路内的集成电路和/或功能模块之间进行无线通信的方法和装置。 半导体器件制造操作使用预定的照相和/或化学处理步骤顺序在半导体衬底上形成一个或多个功能模块。 功能模块耦合到形成在半导体衬底上和/或连接到其上以形成集成电路的集成波导。 功能模块通过集成波导使用多址传输方案彼此通信以及其他集成电路。 一个或多个集成电路可以耦合到集成电路载体以形成多芯片模块。 多芯片模块可以耦合到半导体封装以形成封装的集成电路。

公开(公告)号：US20120273455A1

公开(公告)日：2012-11-01

申请号：US13098101

申请日：2011-04-29

Applicant: William Martin Lackowski ,  William Neil Everett ,  Joseph F. Pinkerton

Inventor： William Martin Lackowski ,  William Neil Everett ,  Joseph F. Pinkerton

IPC: H01B3/08

CPC classification number: B82B3/0023 ,  B81B2201/018 ,  B81B2201/036 ,  B81B2203/0109 ,  B81B2207/053 ,  B81C3/001 ,  B81C2201/019 ,  B81C2201/0194 ,  B81C2203/036 ,  B81C2203/051 ,  G01L9/0042 ,  H01H1/0094

Abstract: The present invention relates to thin membranes (such as graphene windows) and methods of aligned transfer of such thin membranes to substrates. The present invention further relates to devices that include such thin membranes.

Abstract translation: 本发明涉及薄膜（例如石墨烯窗）和将这种薄膜对准转移到基底的方法。 本发明还涉及包括这种薄膜的装置。

公开(公告)号：US08120133B2

公开(公告)日：2012-02-21

申请号：US11519142

申请日：2006-09-11

Applicant: Flavio Pardo

Inventor： Flavio Pardo

IPC: H01L29/12

CPC classification number: H01H61/04 ,  B81B3/0024 ,  B81B2201/018 ,  H01H2001/0047 ,  H01H2061/006 ,  H01H2061/008

Abstract: A micro-electromechanical actuator employs metal for the hot arm and silicon for at least the flexible portion of the cold arm. The cold arm made of silicon is coupled to a metal wire that moves with it and is used to carry the signal to be switched when at least two of such actuators are formed into a switch. Arrays of such switches on a first chip may be cooperatively arranged with a second chip that is flip-chip bonded to the first chip, the second chip having thereon wires routing the electrical control currents to the various hot arms for heating them as well as the signals to be switched by the various switches.

Abstract translation: 微机电致动器至少将冷臂的柔性部分用于热臂和硅的金属。 由硅制成的冷臂联接到与其一起移动的金属线，并且当至少两个这样的致动器形成开关时，用于承载要切换的信号。 第一芯片上的这种开关的阵列可以与倒装芯片接合到第一芯片的第二芯片协同地布置，第二芯片具有将电控制电流路由到各种热臂以加热它们的电线， 信号由各种开关切换。

公开(公告)号：US20110281389A1

公开(公告)日：2011-11-17

申请号：US13189734

申请日：2011-07-25

Applicant: Mayumi Mikami ,  Konami Izumi

Inventor： Mayumi Mikami ,  Konami Izumi

IPC: H01L21/00

CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81C1/00166 ,  H01H1/58 ,  H01H2001/0052 ,  H01H2001/0057 ,  Y10T29/49155

Abstract: A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.

Abstract translation: 在形成有表面微机械加工技术的微型机械（MEMS机构）中，提供了防止配线断线和断线的结构。 在牺牲层之上的布线（上辅助布线）在牺牲层上电连接到不同的布线（上连接布线），从而在生成的台阶部分上形成在牺牲层上的布线的变薄，断开等 由于可以防止牺牲层的厚度。 牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成，因此薄。 然而，不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上，并且具有200nm至1μm的厚度，从而可以进一步布线的变薄，断开等 防止了

公开(公告)号：US07977137B1

公开(公告)日：2011-07-12

申请号：US12152130

申请日：2008-05-08

Applicant: John L. Ebel ,  Rebecca Cortez ,  Kevin D. Leedy ,  Richard E. Strawser ,  Donald E. Strawser, legal representative

Inventor： John L. Ebel ,  Rebecca Cortez ,  Kevin D. Leedy ,  Richard E. Strawser

IPC: H01L21/00

CPC classification number: H01H59/0009 ,  B81B7/0064 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2207/096 ,  B81C2201/0108 ,  B81C2203/0136 ,  B81C2203/0154 ,  H01H2059/0045

Abstract: A process for making a latching zip-mode actuated mono wafer MEMS switch especially suited to capacitance coupled signal switching of microwave radio frequency signals is disclosed. The single wafer fabrication process used for the switch employs sacrificial layers and liquid removal of these layers in order to also provide needed permanent physical protection for an ultra fragile switch moving arm member. Latched operation of the achieved MEMS switch without use of conventional holding electrodes or magnetic fields is also achieved. Fabrication of a single MEMS switch is disclosed however large or small arrays may be achieved. A liquid removal based fabrication process is disclosed.

Abstract translation: 公开了一种用于制造特别适用于微波射频信号的电容耦合信号切换的闭锁拉链模式致动单晶片MEMS开关的方法。 用于开关的单个晶片制造工艺采用牺牲层和这些层的液体移除，以便为超脆弱的开关移动臂构件提供所需的永久物理保护。 还实现了不使用常规保持电极或磁场的实现的MEMS开关的锁定操作。 公开了单个MEMS开关的制造，但是可以实现大的或小的阵列。 公开了一种基于液体去除的制造方法。