公开(公告)号：US09714165B1

公开(公告)日：2017-07-25

申请号：US14797958

申请日：2015-07-13

Applicant: PANASONIC CORPORATION

Inventor： Peter Charles Philip Hrudey

IPC: H01L23/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00301 ,  B81B2201/025 ,  B81B2207/095 ,  B81C1/00182 ,  B81C2201/019 ,  B81C2203/0118

Abstract: A semiconductor manufacturing process enables a complex multi-layer, silicon based MEMS devices, such as a gyroscope or accelerometer to be formed without using Silicon On Insulator (SOI) substrates and obviates the need to purchase and use SOI wafers as starting materials. The disclosed techniques further allows the etching of the sacrificial oxide to be “head started” prior to fusion bonding, thereby reducing the amount of release etching required at the end of the MEMS wafer processing.

公开(公告)号：US09663353B2

公开(公告)日：2017-05-30

申请号：US14403571

申请日：2013-06-28

Applicant: Intel IP Corporation

Inventor： Gerald Ofner ,  Thorsten Meyer ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

IPC: H01L27/14 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/10 ,  B81B2207/012 ,  B81B2207/053 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

公开(公告)号：US20170138734A1

公开(公告)日：2017-05-18

申请号：US14942506

申请日：2015-11-16

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Peng SHAO

IPC: G01C19/5712 ,  B81B3/00

CPC classification number: G01C19/5712 ,  B81B3/0056 ,  B81B3/0078 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2203/04 ,  B81B2203/055 ,  B81B2207/03 ,  G01C19/5733

Abstract: A MEMS device includes a mass system capable of undergoing oscillatory drive motion along a drive axis and oscillatory sense motion along a sense axis perpendicular to the drive axis. A quadrature correction unit includes a fixed electrode and a movable electrode coupled to the movable mass system, each being lengthwise oriented along the drive axis. The movable electrode is spaced apart from the fixed electrode by a gap having an initial width. At least one of the fixed and movable electrodes includes an extrusion region extending toward the other of the fixed and movable electrodes. The movable electrode undergoes oscillatory motion with the mass system such that the extrusion region is periodically spaced apart from the other of the fixed and movable electrodes by a gap exhibiting a second width that is less than the first width thereby enabling capacitance enhancement between the electrodes.

公开(公告)号：US20170115322A1

公开(公告)日：2017-04-27

申请号：US14919986

申请日：2015-10-22

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： FENGYUAN LI ,  Chad S. Dawson ,  Andrew C. MCNEIL ,  Arvind S. Salian ,  Mark E. Schlarmann

IPC: G01P15/125

CPC classification number: G01P15/125 ,  B81B3/0078 ,  B81B2201/025 ,  B81B2201/0264 ,  G01L9/0042 ,  G01L9/0073 ,  G01L19/0092

Abstract: A sensor device comprises a device structure and a cap coupled with the device structure to produce a cavity in which components of the sensor device are located. The device structure includes a substrate and a movable element spaced apart from a surface of the substrate. A port extends through the substrate underlying the movable element. A sense element is spaced apart from the movable element and is displaced away from the port. The movable element and the sense element form an inertial sensor to sense a motion stimulus as movement of the movable element relative to the sense element. An additional sense element together with a diaphragm spans across the port. The movable element and the additional sense element form a pressure sensor for sensing a pressure stimulus from an external environment as movement of the additional sense element together with the diaphragm relative to the movable element.

公开(公告)号：US09632105B2

公开(公告)日：2017-04-25

申请号：US14347867

申请日：2012-09-28

Applicant: Panasonic Corporation

Inventor： Shigehiro Yoshiuchi ,  Satoshi Ohuchi ,  Tsuyoshi Fujii ,  Kensaku Yamamoto ,  Hideo Ohkoshi

IPC: G01P15/08 ,  G01C19/5769 ,  B81B7/00 ,  H01L23/00

CPC classification number: G01C19/5769 ,  B81B7/0048 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/07 ,  G01P15/0802 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: An inertial force sensor that can suppress fluctuation of detection sensitivity even if an external stress is applied to the inertial force sensor. Angular velocity sensor (1), that is, an inertial force sensor includes ceramic substrate (6), lower lid (4) adhering to ceramic substrate (6) with adhesives (11a and 11b) (first adhesives), and sensor element (2) adhering to lower lid (4) with adhesives (10a and 10b) (second adhesives). The elastic moduli of adhesives (11a and 11b) are smaller than those of adhesives (10a and 10b).

公开(公告)号：US20170081174A1

公开(公告)日：2017-03-23

申请号：US14861886

申请日：2015-09-22

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： LIANJUN LIU ,  DAVID J. MONK

IPC: B81B7/00 ,  H01L43/02 ,  H01L43/12 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/025 ,  B81C1/00301 ,  B81C1/00817 ,  G01L9/0042 ,  G01L9/0073 ,  H01L43/02 ,  H01L43/12

Abstract: In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.

公开(公告)号：US20160159644A1

公开(公告)日：2016-06-09

申请号：US15043850

申请日：2016-02-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00293 ,  B81B3/0021 ,  B81B7/0041 ,  B81B7/007 ,  B81B7/02 ,  B81B7/04 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0264 ,  B81C1/00134 ,  B81C1/00309 ,  B81C2201/013 ,  B81C2203/0118 ,  G01C19/56 ,  G01C19/5769 ,  G01L9/0044 ,  G01L19/0076 ,  G01L19/0092 ,  G01P15/00 ,  G01P15/0802 ,  G01P15/125

Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.

公开(公告)号：US09346666B2

公开(公告)日：2016-05-24

申请号：US13957875

申请日：2013-08-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bruce C. S. Chou

IPC: G01P15/08 ,  H01L21/70 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0032 ,  B81B2201/025 ,  B81C1/00246 ,  B81C2203/0109 ,  B81C2203/0714 ,  H01L2224/83805

Abstract: A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side of the first wafer and a free space is etched in the isolation set. The second wafer is bonded to the isolation set. A floating structure, such as an inertia sensing device, is formed in the second wafer over the free space. In an embodiment, a surface mount pad is formed on the second side of the first wafer. Then, the floating structure is electrically coupled to the surface mount pad using a through silicon via (TSV) conductor.

公开(公告)号：US20160083249A1

公开(公告)日：2016-03-24

申请号：US14958966

申请日：2015-12-04

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Aaron A. Geisberger ,  Margaret L. Kniffin

IPC: B81C1/00

CPC classification number: B81C1/00658 ,  B81B3/0027 ,  B81B3/0078 ,  B81B2201/025 ,  B81C1/0015 ,  G01C19/574 ,  G01P15/125 ,  G01P2015/0831 ,  H01L21/76 ,  H01L41/113 ,  H01L41/1136

Abstract: A MEMS device includes a first sense electrode and a first portion of a sense mass formed in a first structural layer, where the first sense electrode is fixedly coupled with the substrate and the first portion of the sense mass is suspended over the substrate. The MEMS device further includes a second sense electrode and a second portion of the sense mass formed in a second structural layer. The second sense electrode is spaced apart from the first portion of the sense mass in a direction perpendicular to a surface of the substrate, and the second portion of the sense mass is spaced apart from the first sense electrode in the same direction. A junction is formed between the first and second portions of the sense mass so that they are coupled together and move concurrently in response to an imposed force.

公开(公告)号：US09242851B2

公开(公告)日：2016-01-26

申请号：US13960032

申请日：2013-08-06

Applicant: Aaron A. Geisberger ,  Margaret L. Kniffin

Inventor： Aaron A. Geisberger ,  Margaret L. Kniffin

IPC: B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  G01P15/125 ,  G01C19/574 ,  G01P15/08

CPC classification number: B81C1/00658 ,  B81B3/0027 ,  B81B3/0078 ,  B81B2201/025 ,  B81C1/0015 ,  G01C19/574 ,  G01P15/125 ,  G01P2015/0831 ,  H01L21/76 ,  H01L41/113 ,  H01L41/1136

Abstract: A MEMS device includes a first sense electrode and a first portion of a sense mass formed in a first structural layer, where the first sense electrode is fixedly coupled with the substrate and the first portion of the sense mass is suspended over the substrate. The MEMS device further includes a second sense electrode and a second portion of the sense mass formed in a second structural layer. The second sense electrode is spaced apart from the first portion of the sense mass in a direction perpendicular to a surface of the substrate, and the second portion of the sense mass is spaced apart from the first sense electrode in the same direction. A junction is formed between the first and second portions of the sense mass so that they are coupled together and move concurrently in response to an imposed force.