中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

65 records (took 0.014 seconds)

    Method of forming a nano-structure
    13.
    发明授权
    Method of forming a nano-structure 有权
    形成纳米结构的方法

    公开(公告)号：US09410260B2

    公开(公告)日：2016-08-09

    申请号：US13822062

    申请日：2010-10-21

    Applicant: Peter Mardilovich ,  Qingqiao Wei ,  Anthony M. Fuller

    Inventor： Peter Mardilovich ,  Qingqiao Wei ,  Anthony M. Fuller

    IPC: C25D11/12 ,  C25D11/34 ,  C25D5/02 ,  B81C1/00 ,  C25D11/04 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y20/00

    CPC classification number: C25D5/022 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0114 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C25D11/045 ,  C25D11/12 ,  C25D11/34

    Abstract: A method of forming a nano-structure involves forming a multi-layered structure including an oxidizable material layer established on a substrate, and another oxidizable material layer established on the oxidizable material layer. The oxidizable material layer is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. Anodizing the other oxidizable material layer forms a porous anodic structure, and anodizing the oxidizable material layer forms a dense oxidized layer and nano-pillars which grow through the porous anodic structure into pores thereof. The porous structure is selectively removed to expose the nano-pillars. A surface (I) between the dense oxidized layer and a remaining portion of the oxidizable material layer is anodized to consume a substantially cone-shaped portion of the nano-pillars to form cylindrical nano-pillars.

    Abstract translation: 形成纳米结构的方法包括形成包括建立在基板上的可氧化材料层的多层结构和在可氧化材料层上建立的另一可氧化材料层。 可氧化材料层是在氧化期间具有膨胀系数的可氧化材料，其大于1.阳极氧化其它可氧化材料层形成多孔阳极结构，阳极氧化可氧化材料层形成致密氧化层和纳米柱 通过多孔阳极结构生长成孔。 选择性地去除多孔结构以暴露纳米柱。 氧化层和氧化物层的剩余部分之间的表面（I）被阳极氧化以消耗纳米柱的大致锥形部分以形成圆柱形纳米柱。

    METHOD OF FORMING A NANO-STRUCTURE
    15.
    发明申请
    METHOD OF FORMING A NANO-STRUCTURE 有权
    形成纳米结构的方法

    公开(公告)号：US20130175177A1

    公开(公告)日：2013-07-11

    申请号：US13822062

    申请日：2010-10-21

    Applicant: Peter Mardilovich ,  Qingqiao Wei ,  Anthony M. Fuller

    Inventor： Peter Mardilovich ,  Qingqiao Wei ,  Anthony M. Fuller

    IPC: C25D5/02

    CPC classification number: C25D5/022 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0114 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C25D11/045 ,  C25D11/12 ,  C25D11/34

    Abstract: A method of forming a nano-structure (100′) involves forming a multi-layered structure (10) including an oxidizable material layer (14) established on a substrate (12), and another oxidizable material layer (16) established on the oxidizable material layer (14). The oxidizable material layer (14) is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. Anodizing the other oxidizable material layer (16) forms a porous anodic structure (16′), and anodizing the oxidizable material layer (14) forms a dense oxidized layer (14′) and nano-pillars (20) which grow through the porous anodic structure (16′) into pores (18) thereof. The porous structure (16′) is selectively removed to expose the nano-pillars (20). A surface (I) between the dense oxidized layer (14′) and a remaining portion of the oxidizable material layer (14) is anodized to consume a substantially cone-shaped portion (32) of the nano-pillars (20) to form cylindrical nano-pillars (20′).

    Abstract translation: 形成纳米结构（100'）的方法包括形成包括建立在基板（12）上的可氧化材料层（14）的多层结构（10），以及建立在可氧化的材料层（16）上的另一可氧化材料层 材料层（14）。 可氧化材料层（14）是在氧化期间具有大于1的膨胀系数的可氧化材料。阳极氧化其它可氧化材料层（16）形成多孔阳极结构（16'），并阳极氧化可氧化材料层 （14）形成致密氧化层（14'）和通过多孔阳极结构（16'）生长成其孔隙（18）的纳米柱（20）。 选择性地去除多孔结构（16'）以暴露纳米柱（20）。 密集氧化层（14'）和可氧化材料层（14）的剩余部分之间的表面（I）被阳极氧化以消耗纳米柱（20）的大致锥形部分（32），以形成圆柱形 纳米柱（20'）。

    Method of etching silicon wafer and silicon wafer
    18.
    发明授权
    Method of etching silicon wafer and silicon wafer 失效
    蚀刻硅晶片和硅晶片的方法

    公开(公告)号：US06284670B1

    公开(公告)日：2001-09-04

    申请号：US09120803

    申请日：1998-07-23

    Applicant: Yoshitsugu Abe ,  Hiroshi Tanaka ,  Atsushi Sakaida ,  Toshihisa Taniguchi ,  Tsuyoshi Fukada

    Inventor： Yoshitsugu Abe ,  Hiroshi Tanaka ,  Atsushi Sakaida ,  Toshihisa Taniguchi ,  Tsuyoshi Fukada

    IPC: H01L213063

    CPC classification number: B81C1/00158 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0114 ,  B81C2201/0133 ,  H01L21/3063

    Abstract: After an Si wafer is anisotropically etched through an etching mask having an opening in an anisotropically etching solution, an etching face of the Si wafer emerged by the anisotropic etching is subjected to anodic oxidation by applying a positive voltage for anodic oxidation on the Si wafer. As a result, the etching face of the Si wafer is isotropically etched due to the anodic oxidation in the anisotropic etching solution. By the isotropic etching thus performed, a sharp corner formed at an end portion of a recess portion formed in the Si wafer by the anisotropic etching, is rounded. Because the isotropic etching reaction progresses very slowly in comparison with the anisotropic etching, control of the etching can be made easy and accurately. As a result, the thickness of the diaphragm can be prevented from being dispersed.

    Abstract translation: 在通过各向异性蚀刻溶液中具有开口的蚀刻掩模对Si晶片进行各向异性蚀刻之后，通过在Si晶片上施加阳极氧化的正电压，通过各向异性蚀刻出现的Si晶片的蚀刻面进行阳极氧化。 结果，由于各向异性蚀刻溶液中的阳极氧化，Si晶片的蚀刻面被各向同性地蚀刻。 通过如此进行的各向同性蚀刻，通过各向异性蚀刻形成在形成在Si晶片中的凹部的端部处形成的尖角变圆。 由于与各向异性蚀刻相比，各向同性蚀刻反应进行得非常缓慢，因此可以容易且精确地控制蚀刻。 结果，可以防止隔膜的厚度分散。

    Method for manufacturing minute silicon mechanical device
    19.
    发明授权
    Method for manufacturing minute silicon mechanical device 失效
    微晶硅机械装置的制造方法

    公开(公告)号：US5981308A

    公开(公告)日：1999-11-09

    申请号：US887927

    申请日：1997-07-03

    Applicant: Seok-Soo Lee

    Inventor： Seok-Soo Lee

    IPC: C25F3/12 ,  B81B3/00 ,  H01L21/306 ,  H01L21/3063 ,  H01L49/00 ,  H01L21/00 ,  H01L21/76

    CPC classification number: B81C1/0015 ,  B81B2203/0136 ,  B81C2201/0114 ,  B81C2201/0136

    Abstract: A method for manufacturing a minute silicon mechanical device, which includes the steps of forming a diffusion region by doping a predetermined portion of a silicon substrate with an impurity of high density; forming an epitaxial layer over the silicon substrate including the diffusion region and forming an oxide layer over the epitaxial layer; forming an ohmic contact layer at the lower surface of the silicon substrate; patterning the oxide layer to have a striped configuration at that portion of the oxide layer corresponding to the predetermined portion of the diffusion region, thus exposing a predetermined portion of the epitaxial layer; forming a plurality of beams having a striped configuration by etching the exposed portion of the epitaxial layer, using the oxide layer as a mask and then removing the oxide layer; and removing the diffusion region below the plurality of beams.

    Abstract translation: 一种微硅机械装置的制造方法，其特征在于，包括以下步骤：通过用高密度的杂​​质掺杂硅衬底的预定部分来形成扩散区; 在包括所述扩散区的所述硅衬底上形成外延层，并在所述外延层上形成氧化物层; 在硅衬底的下表面处形成欧姆接触层; 在氧化物层的与扩散区域的预定部分相对应的部分处，使氧化物层图形化，从而暴露出外延层的预定部分; 通过使用所述氧化物层作为掩模蚀刻所述外延层的暴露部分，然后除去所述氧化物层，形成具有条纹构造的多个光束; 以及去除多个光束下方的扩散区域。

    FEEDBACK CONTROL OF DIMENSIONS IN NANOPORE AND NANOFLUIDIC DEVICES
    20.
    发明申请
    FEEDBACK CONTROL OF DIMENSIONS IN NANOPORE AND NANOFLUIDIC DEVICES 审中-公开
    纳米和纳米级器件尺寸反馈控制

    公开(公告)号：US20160355942A1

    公开(公告)日：2016-12-08

    申请号：US15242491

    申请日：2016-08-20

    Applicant: International Business Machines Corporation

    Inventor： Stefan Harrer ,  Stephen M. Rossnagel ,  Philip S. Waggoner

    IPC: C25D11/02 ,  C25D11/26 ,  C25D7/04 ,  B81C1/00

    CPC classification number: C25D11/022 ,  B81C1/00071 ,  B81C2201/0114 ,  C25D7/04 ,  C25D11/26 ,  C25D11/34

    Abstract: Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

    Abstract translation: 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到所选尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。

Patent Agency Ranking