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    Method for Electrochemical Fabrication
    15.
    发明申请
    Method for Electrochemical Fabrication 有权
    电化学加工方法

    公开(公告)号：US20110247941A1

    公开(公告)日：2011-10-13

    申请号：US13167451

    申请日：2011-06-23

    Applicant: Adam L. Cohen

    Inventor： Adam L. Cohen

    IPC: C25D5/02

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

    Method for electrochemical fabrication
    16.
    发明授权
    Method for electrochemical fabrication 有权
    电化学制造方法

    公开(公告)号：US07998331B2

    公开(公告)日：2011-08-16

    申请号：US12698026

    申请日：2010-02-01

    Applicant: Adam L. Cohen

    Inventor： Adam L. Cohen

    IPC: C25D5/02

    CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

    Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

    Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

    Microfluidic devices fabricated by direct thick film writing and methods thereof
    18.
    发明授权
    Microfluidic devices fabricated by direct thick film writing and methods thereof 失效
    通过直接厚膜书写制造的微流体装置及其方法

    公开(公告)号：US07736592B2

    公开(公告)日：2010-06-15

    申请号：US11328697

    申请日：2006-01-10

    Applicant: William J. Grande ,  Gary A. Fino

    Inventor： William J. Grande ,  Gary A. Fino

    IPC: B01L3/02

    CPC classification number: B29C66/1122 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0887 ,  B29C33/3878 ,  B29C33/428 ,  B29C65/48 ,  B29C65/52 ,  B29C66/232 ,  B29C66/5326 ,  B29C66/5346 ,  B29L2031/756 ,  B33Y10/00 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0197

    Abstract: The present invention relates to a process for producing a microfluidic device which involves providing a substrate with a surface and writing a first flowable material on the surface of the substrate. The first flowable material is then solidified to form spacer elements, each with a top surface distal from the surface of the substrate, and a second flowable material is written on the surface of the substrate. A cover having a surface is provided and applied to the substrate, with the surface of the cover contacting the top surfaces of the spacer elements. The second flowable material is solidified to form walls, where the walls, the surface of the substrate, and the surface of the cover form flow channels of a microfluidic device. The resulting microfluidic device is also disclosed.

    Abstract translation: 本发明涉及一种用于生产微流体装置的方法，其涉及提供具有表面的基底并将第一可流动材料写在基底的表面上。 然后将第一可流动材料固化以形成间隔元件，每个间隔元件具有远离衬底表面的顶表面，并且第二可流动材料被写在衬底的表面上。 提供具有表面的盖并将其施加到基板，其中盖的表面接触间隔元件的顶表面。 第二可流动材料被固化以形成壁，其中壁，基底的表面和盖的表面形成微流体装置的流动通道。 还公开了所得的微流体装置。

    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material
    19.
    发明申请
    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material 审中-公开
    用于生产多层结构的电化学制造方法包括在材料沉积物平面化中使用金刚石加工

    公开(公告)号：US20090020433A1

    公开(公告)日：2009-01-22

    申请号：US12121625

    申请日：2008-05-15

    Applicant: Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    Inventor： Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    IPC: C25D5/48

    CPC classification number: C25D1/003 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D5/02 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885

    Abstract: Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.

    Abstract translation: 公开了用于形成单层和多层中尺度和微结构的电化学制造方法，其包括使用金刚石加工（例如飞切或车削）来平坦化层。 一些实施例集中于可用于电化学制造的牺牲和结构材料的系统，并且可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn， 和Au和Sn-Pb），其中第一材料或材料是结构材料，第二材料是牺牲材料）。 一些实施例着重于在使用金刚石加工来平面化使用难以加工的材料进行电化学制造的结构（例如，通过沉积难以加工材料选择性且潜在地具有少量多余电镀厚度和/或预加工沉积 到所需表面水平的小增量（例如使用研磨或粗切割操作），然后使用金刚石飞切切割来完成其加工，和/或从硬质材料的薄壁区域形成结构或部分结构 而不是结构材料的宽固体区域。

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