公开(公告)号：US09281165B1

公开(公告)日：2016-03-08

申请号：US14469050

申请日：2014-08-26

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Christopher Lupoli ,  William Davis Lee ,  Frank Sinclair ,  James Pixley

IPC: H01J49/00 ,  H01J37/30 ,  H01J37/317 ,  H01J37/05 ,  H05H5/06

CPC classification number: H01J37/3007 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/0815 ,  H05H5/063

Abstract: A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.

Abstract translation: 公开了一种具有改进性能的串联加速器和离子注入机。 串联加速器包括多个输入电极，多个输出电极和设置在它们之间的高电压端子。 高压端子包括剥离管。 将中性分子注入汽提塔，从入射的负离子束中除去电子。 所产生的正离子朝向多个输出电极加速。 为了减少离开汽提塔的不需要的正离子的量，偏压电极设置在汽提塔管的入口和出口处。 偏置电极偏置第二电压，大于施加到端子的第一电压。 偏置电极排斥缓慢移动的正离子，防止它们离开剥离管并污染工件。

公开(公告)号：US20150083929A1

公开(公告)日：2015-03-26

申请号：US14565051

申请日：2014-12-09

Applicant: FEI Company

Inventor： Mostafa Maazouz

IPC: H01J37/147 ,  H01J37/248 ,  H01J37/06

CPC classification number: H01J37/07 ,  H01J3/026 ,  H01J37/04 ,  H01J37/06 ,  H01J37/10 ,  H01J37/1477 ,  H01J37/21 ,  H01J37/248 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/0473 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/1518 ,  H01J2237/1534 ,  H01J2237/28 ,  H01J2237/31749

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.

公开(公告)号：US20140374617A1

公开(公告)日：2014-12-25

申请号：US14313128

申请日：2014-06-24

Applicant: SEN CORPORATION

Inventor： Mitsuaki Kabasawa ,  Tatsuo Nishihara ,  Kazuhiro Watanabe ,  Yuuji Takahashi ,  Tatsuya Yamada

IPC: H01J3/26

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J2237/0473 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/15 ,  H01J2237/30472

Abstract: A high-frequency acceleration type ion acceleration and transportation apparatus is a beamline after an ion beam is accelerated by a high-frequency acceleration system having an energy spread with respect to set beam energy and includes an energy analysis deflection electromagnet and a horizontal beam focusing element. In the ion acceleration and transportation apparatus, a double slit that is configured by an energy spread confining slit and an energy analysis slit is additionally disposed at a position at which energy dispersion and a beam size are to be appropriate. The position is determined based on a condition of the energy analysis deflection electromagnet and the horizontal beam focusing element, and the double slit performs energy separation and energy definition and decreases the energy spread of the ion beam by performing adjustment for a smaller energy spread while suppressing a decrease in the amount of a beam current.

Abstract translation: 高频加速型离子加速和输送装置是通过具有相对于设定束能量的能量扩散的高频加速系统加速离子束之后的束线，并且包括能量分析偏转电磁体和水平束聚焦元件 。 在离子加速输送装置中，在能量分散和光束尺寸适当的位置处，另外设置由能量扩散限制狭缝和能量分析狭缝构成的双狭缝。 基于能量分析偏转电磁体和水平光束聚焦元件的条件确定位置，并且双缝执行能量分离和能量定义，并且通过在抑制时能够进行更小的能量扩展的调整来减小离子束的能量扩展 光束电流量的减少。

公开(公告)号：US08592778B2

公开(公告)日：2013-11-26

申请号：US13055479

申请日：2010-03-31

Applicant: Takaaki Iwata

Inventor： Takaaki Iwata

IPC: A61N5/10

CPC classification number: H01J37/147 ,  A61N5/10 ,  A61N5/1043 ,  A61N5/1048 ,  A61N5/1077 ,  A61N2005/1087 ,  G06N3/02 ,  G21H5/00 ,  G21K1/093 ,  G21K5/04 ,  H01J37/04 ,  H01J2237/0473

Abstract: The objective is to eliminate the effect of the hysteresis of a scanning electromagnet so that, in the raster scanning or the hybrid scanning, there is obtained a particle beam irradiation apparatus that realizes high-accuracy beam irradiation. There are provided a scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation result has satisfied the predetermined condition.

Abstract translation: 目的是消除扫描电磁体的滞后的影响，使得在光栅扫描或混合扫描中，获得实现高精度光束照射的粒子束照射装置。 提供了扫描电源，其输出用于扫描电磁体的激励电流和控制扫描电源的照射控制装置; 照射控制装置设置有扫描电磁体指令值学习生成器，其通过用于从扫描电源输出的激励电流的命令值来评估作为一系列照射操作的通过结果，该命令值更新命令 励磁电流的值，当评估结果不满足预定条件时，进行贯通，并且向扫描电源输出使其评估结果满足的激励电流的指令值 预定条件。

公开(公告)号：US20110240875A1

公开(公告)日：2011-10-06

申请号：US13055479

申请日：2010-03-31

Applicant: Takaaki Iwata

Inventor： Takaaki Iwata

IPC: H01J3/26 ,  H01J3/22 ,  A61N5/10

CPC classification number: H01J37/147 ,  A61N5/10 ,  A61N5/1043 ,  A61N5/1048 ,  A61N5/1077 ,  A61N2005/1087 ,  G06N3/02 ,  G21H5/00 ,  G21K1/093 ,  G21K5/04 ,  H01J37/04 ,  H01J2237/0473

Abstract: The objective is to eliminate the effect of the hysteresis of a scanning electromagnet so that, in the raster scanning or the hybrid scanning, there is obtained a particle beam irradiation apparatus that realizes high-accuracy beam irradiation. There are provided a scanning power source that outputs the excitation current for a scanning electromagnet and an irradiation control apparatus that controls the scanning power source; the irradiation control apparatus is provided with a scanning electromagnet command value learning generator that evaluates the result of a run-through, which is a series of irradiation operations through a command value for the excitation current outputted from the scanning power source, that updates the command value for the excitation current, when the result of the evaluation does not satisfy a predetermined condition, so as to perform the run-through, and that outputs to the scanning power source the command value for the excitation current such that its evaluation result has satisfied the predetermined condition.

Abstract translation: 目的是消除扫描电磁体的滞后的影响，使得在光栅扫描或混合扫描中，获得实现高精度光束照射的粒子束照射装置。 提供了扫描电源，其输出用于扫描电磁体的激励电流和控制扫描电源的照射控制装置; 照射控制装置设置有扫描电磁体指令值学习生成器，其通过用于从扫描电源输出的激励电流的命令值来评估作为一系列照射操作的通过结果，该命令值更新命令 励磁电流的值，当评估结果不满足预定条件时，进行贯通，并且向扫描电源输出使其评估结果满足的激励电流的指令值 预定条件。

公开(公告)号：US20070176114A1

公开(公告)日：2007-08-02

申请号：US11647801

申请日：2006-12-29

Applicant: Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

Inventor： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

IPC: H01J27/00

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

Abstract translation: 公开了一种离子注入，其包括具有限制的出口孔的电离室，并且被构造成使得离子化室中的气体或蒸汽的压力显着高于离子被提取外部的提取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域中，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束输送到目标表面，并将输送的离子束的离子注入靶中。

公开(公告)号：US20040104682A1

公开(公告)日：2004-06-03

申请号：US10433493

申请日：2004-01-08

Inventor： Thomas N. Horsky ,  Brian F. Cohen ,  Wade A. Krull ,  George P. Sacco Jr.

IPC: H01J007/24 ,  H01K001/62

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L29/6659

Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

Abstract translation: 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

公开(公告)号：US12125670B2

公开(公告)日：2024-10-22

申请号：US17610811

申请日：2020-05-14

Applicant: MI2-FACTORY GMBH

Inventor： Constantin Csato ,  Florian Krippendorf

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/08 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01L21/26513 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057

Abstract: A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.

公开(公告)号：US20240087836A1

公开(公告)日：2024-03-14

申请号：US18287461

申请日：2022-06-17

Applicant: NHV CORPORATION

Inventor： Masahiro NAGAI ,  Toshio KIMURA

IPC: H01J37/06

CPC classification number: H01J37/06 ,  H01J2237/0473 ,  H01J2237/06308

Abstract: An electron-beam irradiation apparatus includes: a power source device; an accelerating tube that accelerates electrons when power is supplied from the power source device, to generate an electron beam; and a pressure tank that contains the power source device and the accelerating tube. The pressure tank is configured so as to be dividable into a first division body that contains the power source device and a second division body that contains the accelerating tube. The second division body has an outlet for emitting the electron beam emitted from the accelerating tube, to the outside of the pressure tank. In addition, the power source device has a connecting part connected to the second division body.

公开(公告)号：US11869743B2

公开(公告)日：2024-01-09

申请号：US17317861

申请日：2021-05-11

Applicant: KLA Corporation

Inventor： Xinrong Jiang

IPC: H01J37/09 ,  H01J37/12 ,  H01J37/073 ,  H01J37/14

CPC classification number: H01J37/09 ,  H01J37/073 ,  H01J37/12 ,  H01J37/14 ,  H01J2237/0453 ,  H01J2237/0473

Abstract: Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.