公开(公告)号：US20160107117A1

公开(公告)日：2016-04-21

申请号：US14877753

申请日：2015-10-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Govinda RAJ ,  Monika AGARWAL ,  Hamid MOHIUDDIN ,  Kadthala R. NARENDRNATH

IPC: B01D53/32 ,  B01D53/68 ,  H01J37/32

CPC classification number: B01D53/32 ,  B01D53/68 ,  B01D2257/2025 ,  B01D2257/2027 ,  B01D2257/2045 ,  B01D2257/2047 ,  B01D2258/0216 ,  B01D2259/818 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32844 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body.

Abstract translation: 本文公开的实施方案包括等离子体源和用于减轻在半导体工艺中产生的化合物的减排系统。 在一个实施例中，公开了一种等离子体源。 等离子体源包括具有入口和出口的本体，并且入口和出口在体内流体耦合。 身体还包括内表面，并且内表面涂覆有氧化钇或类金刚石碳。 等离子体源还包括设置在主体中的分流器，其形成在入口和出口之间的两个流动路径的位置，以及等离子体发生器，其布置在可操作的位置中，以在主体内在分流器和内表面之间形成等离子体 的身体。

公开(公告)号：US20150357168A1

公开(公告)日：2015-12-10

申请号：US14696955

申请日：2015-04-27

Applicant: APPLIED MATERIALS, INC.

Inventor： COLIN JOHN DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  H01J37/32357 ,  H01J37/32522 ,  Y02C20/30

Abstract: Apparatus and methods that provide a reagent gas in a foreline abatement system are provided herein. In some embodiments, a reagent delivery system includes a water tank having an inner volume that holds a reagent liquid when disposed therein, and a heat exchanger having a central opening disposed in the inner volume and configured to keep a top surface of the reagent liquid from freezing when reagent liquid is disposed within the water tank.

Abstract translation: 本文提供了在前级消除系统中提供反应气体的装置和方法。 在一些实施方案中，试剂递送系统包括具有内部容积的水箱，该内部容积在其中设置时保持试剂液体;以及热交换器，其具有设置在内部体积中的中央开口，并且被配置为保持试剂液体的顶面不被 当试剂液体置于水箱内时冻结。

公开(公告)号：US20150255251A1

公开(公告)日：2015-09-10

申请号：US14199974

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32 ,  H01J37/16

CPC classification number: H01J37/3266 ,  H01J37/165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32844 ,  H01J2237/002 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/334 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US08932430B2

公开(公告)日：2015-01-13

申请号：US13102206

申请日：2011-05-06

Applicant: Aseem K. Srivastava ,  William F. DiVergilio

Inventor： Aseem K. Srivastava ,  William F. DiVergilio

IPC: C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/507 ,  C23C16/52 ,  H01L21/306 ,  C23F1/00 ,  A61H35/00 ,  C23C16/44 ,  H01J37/32 ,  C23C16/06 ,  C23C16/22

CPC classification number: A61H35/006 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/32844 ,  Y02C20/30

Abstract: The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load.

Abstract translation: 本公开涉及一种用于使用使用基于消除等离子体的负载的反馈驱动的集成功率振荡器电路点燃和维持的RF等离子体来产生处理室下游的减排等离子体的方法和装置。 在一个实施例中，等离子体灰化系统包括被配置为从包含工件的上游处理室接收流出物副产物的减排系统。 流出物副产物沿着排气管道被提供到具有集成功率振荡器的下游后燃器单元，其依赖于可操作地耦合到天线的振荡电路以点燃排气管道内的消除等离子体。 天线与等离子体负载一起形成谐振回路，其提供驱动振荡电路的操作的反馈，从而允许振荡电路基于消除等离子体负载的变化来改变其输出。

公开(公告)号：US08840725B2

公开(公告)日：2014-09-23

申请号：US12884978

申请日：2010-09-17

Applicant: David Palagashvili ,  Michael D. Willwerth ,  Alex Erenstein ,  Jingbao Liu

Inventor： David Palagashvili ,  Michael D. Willwerth ,  Alex Erenstein ,  Jingbao Liu

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/509 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/06 ,  C23C16/22

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32816 ,  H01J37/32844

Abstract: Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.

Abstract translation: 本发明的实施例提供了一种循环衬垫系统，其有助于提供更接近于布置在用于处理衬底（例如，处理室）的设备内的衬底的表面的气体的均匀流动。 在一些实施例中，递归衬垫系统可以包括具有外部部分的外部衬套，所述外部部分被配置为对准处理室的壁，从外部向内延伸的底部，以及从底部向上延伸以限定孔 ; 以及内衬，其具有被配置为至少部分地设置在所述孔中的下部，以与所述外衬垫一起限定其间的递归流动路径。

公开(公告)号：US08763174B2

公开(公告)日：2014-07-01

申请号：US13778101

申请日：2013-02-26

Applicant: Footsiebath LLC

Inventor： Genya Vinokur ,  Sasha Vinkur ,  Michael Vinokur

IPC: A47K3/022

CPC classification number: A61H35/006 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/32844 ,  Y02C20/30

Abstract: A soaking basin is provided having a base unit, a disposable liner, and a frame nested therebetween to enable removal of the liner from the base unit, even when filled with liquid. In this manner, a user can remove the liner filled with liquid to pour out the liquid and discard the liner, after a treatment has been completed. Thus, the user need not lift the entire soaking basin to pour out liquid. In addition, the user can use the frame to support the new liner while filling it with liquid, and to transport the filled liner to the base unit to service clients.

Abstract translation: 提供了一种浸泡盆，其具有基座单元，一次性衬垫和嵌在其间的框架，从而即使在充满液体时也能够从基座单元移除衬套。 以这种方式，用户可以在处理完成之后移除填充有液体的衬里以倾倒液体并丢弃衬垫。 因此，用户不需要提起整个浸泡盆来倒出液体。 此外，用户可以使用框架来支撑新衬里，同时用液体填充，并将填充的衬垫运输到基座单元以为客户服务。

公开(公告)号：US20130284724A1

公开(公告)日：2013-10-31

申请号：US13860572

申请日：2013-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael S. Cox ,  Colin John Dickinson

IPC: H05B6/36

CPC classification number: H05B6/36 ,  F01N3/0275 ,  F01N2240/28 ,  H01J37/32834 ,  H01J37/32844 ,  H05H1/46 ,  H05H2001/4667 ,  H05H2245/1215 ,  Y02C20/30

Abstract: In some embodiments an apparatus for treating an exhaust gas in a foreline of a substrate processing system may include a dielectric tube configured to be coupled to the foreline of the substrate processing system to allow a flow of exhaust gases from the foreline through the dielectric tube; an RF coil wound about an outer surface of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube; a tap coupled to the RF coil to provide an RF return path, the tap disposed between the first end of the dielectric tube and a central portion of the dielectric tube.

Abstract translation: 在一些实施例中，用于处理衬底处理系统的前级管线中的废气的设备可以包括被配置为耦合到衬底处理系统的前级管线以允许来自前级管线的废气流经介质管的介质管; 围绕所述电介质管的外表面缠绕的RF线圈，所述RF线圈具有第一端以向所述RF线圈提供RF输入，所述RF线圈的所述第一端设置在所述电介质管的第一端附近，所述第二端 设置在电介质管的第二端附近; 耦合到RF线圈的抽头以提供RF返回路径，所述抽头设置在电介质管的第一端和电介质管的中心部分之间。

公开(公告)号：US08012305B2

公开(公告)日：2011-09-06

申请号：US12196670

申请日：2008-08-22

Applicant: Hiroyuki Takahashi

Inventor： Hiroyuki Takahashi

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

Abstract: An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both. The exhaust assembly includes a powered exhaust plate in combination with a ground electrode is utilized to form the secondary plasma surrounding a peripheral edge of a substrate treated in the plasma processing system.

Abstract translation: 描述了用于等离子体处理系统的排气组件，由此在处理空间和室排气口之间的排气组件中形成二次等离子体，以便减少对真空泵系统的等离子体泄漏，或提高处理等离子体的均匀性 ， 或两者。 排气组件包括与接地电极组合的动力排气板用于形成围绕在等离子体处理系统中处理的衬底的周边边缘的次级等离子体。

公开(公告)号：US20090145555A1

公开(公告)日：2009-06-11

申请号：US12327223

申请日：2008-12-03

Applicant: TADASHI SAWAYAMA ,  YASUSHI FUJIOKA ,  MASAHIRO KANAI ,  SHOTARO OKABE ,  YUZO KOHDA ,  TADASHI HORI ,  KOICHIRO MORIYAMA ,  HIROYUKI OZAKI ,  YUKITO AOTA ,  ATSUSHI KOIKE ,  MITSUYUKI NIWA ,  YASUYOSHI TAKAI ,  HIDETOSHI TSUZUKI

Inventor： TADASHI SAWAYAMA ,  YASUSHI FUJIOKA ,  MASAHIRO KANAI ,  SHOTARO OKABE ,  YUZO KOHDA ,  TADASHI HORI ,  KOICHIRO MORIYAMA ,  HIROYUKI OZAKI ,  YUKITO AOTA ,  ATSUSHI KOIKE ,  MITSUYUKI NIWA ,  YASUYOSHI TAKAI ,  HIDETOSHI TSUZUKI

IPC: H01L21/306 ,  C23C16/44 ,  C23C16/513 ,  C23C14/34

CPC classification number: H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

公开(公告)号：US20090084500A1

公开(公告)日：2009-04-02

申请号：US12326238

申请日：2008-12-02

Applicant: Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

Inventor： Tadashi Sawayama ,  Yasushi Fujioka ,  Masahiro Kanai ,  Shotaro Okabe ,  Yuzo Kohda ,  Tadashi Hori ,  Koichiro Moriyama ,  Hiroyuki Ozaki ,  Yukito Aota ,  Atsushi Koike ,  Mitsuyuki Niwa ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC: C23F1/08 ,  C23C16/00 ,  C23C14/34

CPC classification number: H01L21/67017 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/545 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30 ,  Y02P70/605

Abstract: There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

Abstract translation: 公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置， 由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。 这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。