HIGH THERMAL PERFORMANCE PACKAGING FOR OPTOELECTRONICS DEVICES
    211.
    发明申请
    HIGH THERMAL PERFORMANCE PACKAGING FOR OPTOELECTRONICS DEVICES 有权
    用于光电设备的高热性能包装

    公开(公告)号:US20110204408A1

    公开(公告)日:2011-08-25

    申请号:US12674553

    申请日:2008-08-22

    Abstract: A novel submount for the efficient dissipation of heat away from a semiconductor light emitting device is described, which also maintains efficient electrical conductivity to the n and p contacts of the device by separating the thermal and electrical conductivity paths. The submount comprises at least the following constituent layers: a substrate (400) with thermally conductive properties; a deposited layer (402) having electrically insulating and thermally conducting properties disposed on at least a region of the substrate having a thickness of between 50 nm and 50 microns; a patterned electrically conductive circuit layer (404) disposed on at least a region of the deposited layer; and, a passivation layer at least partially overcoating a top surface of the submount. Also described is a light emitting module employing the substrate and a method of manufacture of the submount.

    Abstract translation: 描述了一种用于从半导体发光器件有效散发热量的新颖的基座,其也通过分离热导电路径和电导通路径来保持器件的n和p触点的有效导电性。 所述底座至少包括以下构成层:具有导热性质的基底(400) 具有电绝缘且导热性能的沉积层(402),其设置在所述基板的至少一个区域上,其厚度在50nm和50微米之间; 设置在沉积层的至少一个区域上的图案化导电电路层(404); 以及至少部分地覆盖所述底座的顶表面的钝化层。 还描述了采用该基板的发光模块和该底座的制造方法。

    Process for Forming an Isolated Electrically Conductive Contact Through a Metal Package
    212.
    发明申请
    Process for Forming an Isolated Electrically Conductive Contact Through a Metal Package 失效
    通过金属封装形成隔离导电接触的工艺

    公开(公告)号:US20110131807A1

    公开(公告)日:2011-06-09

    申请号:US13027167

    申请日:2011-02-14

    Abstract: A method of forming an isolated electrically conductive contact through a metallic substrate includes creating at least one via through the substrate, where the via includes a first opening in a top surface of the substrate, a second opening in an opposing bottom surface and at least one continuous sidewall extending therebetween. A dielectric sleeve is formed on the at least one sidewall of the via while preserving at least a portion of the through via. An electrically conductive filler is then placed into the via. In the examples disclosed, the filler may be a conductive ink or a conductive epoxy.

    Abstract translation: 通过金属基底形成隔离的导电接触的方法包括产生穿过基底的至少一个通孔,其中通孔包括在基底的顶表面中的第一开口,在相对的底表面中的第二开口和至少一个 连续的侧壁在其间延伸。 介电套筒形成在通孔的至少一个侧壁上,同时保留通孔的至少一部分。 然后将导电填料放入通孔中。 在所公开的实施例中,填料可以是导电油墨或导电环氧树脂。

    Electronic Substrate Having Low Current Leakage and High Thermal Conductivity and Associated Methods
    213.
    发明申请
    Electronic Substrate Having Low Current Leakage and High Thermal Conductivity and Associated Methods 审中-公开
    具有低电流泄漏和高导热性和相关方法的电子基板

    公开(公告)号:US20110127562A1

    公开(公告)日:2011-06-02

    申请号:US12787074

    申请日:2010-05-25

    Abstract: Electrical substrates having low current leakage and high thermal conductivity, including associated methods, are provided. In one aspect for example, a multilayer substrate having improved thermal conductivity and dielectric properties can include a metal layer having a working surface with a local Ra of greater than about 0.1 micron, a dielectric layer coated on the working surface of the metal layer, and a thermally conductive insulating layer disposed on the dielectric layer, wherein the multilayer substrate has a minimum resistivity between the metal layer and the thermally conductive insulating layer across all of the working surface of at least 1×106 ohms.

    Abstract translation: 提供了具有低电流泄漏和高导热性的电气基板,包括相关方法。 在一个方面,例如,具有改善的导热性和介电性能的多层基底可以包括具有局部Ra大于约0.1微米的工作表面的金属层,涂覆在金属层的工作表面上的电介质层,以及 布置在所述电介质层上的导热绝缘层,其中所述多层衬底在所述工作表面上的所述金属层和所述导热绝缘层之间具有至少为1×106欧姆的最小电阻率。

    Process for forming an isolated electrically conductive contact through a metal package
    216.
    发明授权
    Process for forming an isolated electrically conductive contact through a metal package 有权
    用于通过金属封装形成隔离的导电触点的工艺

    公开(公告)号:US07886437B2

    公开(公告)日:2011-02-15

    申请号:US11753996

    申请日:2007-05-25

    Abstract: A method of forming an isolated electrically conductive contact through a metal substrate by creating at least one via through the substrate. The at least one sidewall of the via is cleaned and coated with a non-conductive layer. In one example, the non-conductive layer is formed by anodizing the sidewall(s) of the via. In another example, the non-conductive layer may be formed by thin film deposition of a dielectric on the sidewall(s). An electrically conductive filler is then placed into the via. In the examples disclosed, the filler may be a conductive ink or a conductive epoxy.

    Abstract translation: 通过形成至少一个通孔穿过衬底,通过金属衬底形成隔离的导电接触的方法。 通孔的至少一个侧壁被清洁并涂覆有非导电层。 在一个示例中,非导电层通过阳极氧化通孔的侧壁而形成。 在另一示例中,非导电层可以通过在侧壁上的电介质的薄膜沉积来形成。 然后将导电填料放入通孔中。 在所公开的实施例中,填料可以是导电油墨或导电环氧树脂。

    Thin film capacitor, manufacturing method of the same, and electronic component
    217.
    发明授权
    Thin film capacitor, manufacturing method of the same, and electronic component 有权
    薄膜电容器及其制造方法以及电子部件

    公开(公告)号:US07872853B2

    公开(公告)日:2011-01-18

    申请号:US12010622

    申请日:2008-01-28

    Inventor: Nobuyuki Okusawa

    Abstract: There is disclosed a thin film capacitor and the like capable of suppressing fluctuations of a capacity, increasing a VBD, and accordingly improving a device. characteristic and reliability of a product. In electronic components 1 to 4, a capacitor 11 is formed on a flat substrate 51 as a base material including a planarization layer 52 formed on the surface thereof. The capacitor 11 has a structure in which a lower conductor 21 constituted of an underlayer conductor 21a and a conductor 21b, a dielectric film 31 made of alumina or the like, a resin layer J1 mainly formed of a novolak resin or the like, a resin layer J2 mainly formed of a polyimide resin or the like, and an upper conductor 25 constituted of an underlayer conductor 25a and a conductor 25b are formed on the planarization layer 52 of the substrate 51. The resin layer J1 has an opening K1 above the lower conductor 21, and the resin layer J2 is provided with an opening K2 opened more widely than the opening K1.

    Abstract translation: 公开了能够抑制容量的变动,增加VBD,从而改善装置的薄膜电容器等。 产品的特点和可靠性。 在电子部件1〜4中,在作为基材的平坦基板51上形成电容器11,该基材包括在其表面上形成的平坦化层52。 电容器11具有这样的结构,其中由下层导体21a和导体21b构成的下部导体21,由氧化铝等制成的电介质膜31,主要由酚醛清漆树脂等形成的树脂层J1,树脂 主要由聚酰亚胺树脂等形成的层J2,在基板51的平坦化层52上形成由下层导体25a和导体25b构成的上导体25.树脂层J1的下部开口K1 导体21,并且树脂层J2设置有比开口K1更宽的开口K2。

    Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
    218.
    发明授权
    Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof 有权
    金属箔上的掺杂了钛酸钡的薄膜电容器的接受体及其制造方法

    公开(公告)号:US07795663B2

    公开(公告)日:2010-09-14

    申请号:US11157894

    申请日:2005-06-21

    Abstract: The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002-0.05 atom percent of a dopant comprising an element selected from Sc, Cr, Fe, Co, Ni, Ca, Zn, Al, Ga, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu and mixtures thereof and to capacitors comprising such compositions.

    Abstract translation: 本发明涉及一种电介质薄膜组合物,其包括:(1)一种或多种选自(a)钛酸钡的钡/钛的添加剂,(b)在烧制期间可形成钛酸钡的任何组合物,和(c) 其混合物; 溶于(2)有机介质; 并且其中所述薄膜组合物掺杂0.002-0.05原子%的包含选自Sc,Cr,Fe,Co,Ni,Ca,Zn,Al,Ga,Y,Nd,Sm,Eu,Gd中的元素的掺杂剂, Dy,Ho,Er,Yb,Lu及其混合物,以及包含这种组合物的电容器。

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