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    Microelectronic mechanical system and methods
    221.
    发明授权
    Microelectronic mechanical system and methods 有权
    微电子机械系统及方法

    公开(公告)号：US07183637B2

    公开(公告)日：2007-02-27

    申请号：US11129541

    申请日：2005-05-13

    Applicant: Mike Bruner

    Inventor： Mike Bruner

    IPC: H01L21/00 ,  H01L21/461

    CPC classification number: B81C1/00484 ,  B81B2201/0271 ,  B81B2203/0136 ,  B81C1/00246 ,  B81C1/00333 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0136 ,  B81C2203/0735

    Abstract: The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

    Abstract translation: 本发明提供了包封的释放结构，其中间体及其制备方法。 多层结构具有覆盖层，其优选地包括氧化硅和/或氮化硅，并且其形成在耐蚀刻衬底上。 优选地包括氮化硅的图案化器件层嵌入牺牲材料中，优选地包括多晶硅，并且设置在耐蚀刻衬底和覆盖层之间。 进入沟槽或孔形成在覆盖层中，并且牺牲材料通过进入沟槽被选择性地蚀刻，使得器件层的部分从牺牲材料释放。 蚀刻剂优选包含惰性气体氟化物NGF 2X（其中Ng = Xe，Kr或Ar：其中x = 1,2或3）。 在蚀刻该牺牲材料之后，进入沟槽被密封以将器件层的释放部分封装在耐蚀刻衬底和覆盖层之间。 本发明对于制造具有多个释放特征的MEMS器件，多腔器件和器件特别有用。

    Microelectromechanical system comprising a beam that undergoes flexural deformation
    222.
    发明申请
    Microelectromechanical system comprising a beam that undergoes flexural deformation 审中-公开
    微机电系统包括经受弯曲变形的梁

    公开(公告)号：US20070035200A1

    公开(公告)日：2007-02-15

    申请号：US11388213

    申请日：2006-03-23

    Applicant: Fabrice Casset ,  Karim Segueni ,  Arnaud De Grave ,  Nicolas Abele

    Inventor： Fabrice Casset ,  Karim Segueni ,  Arnaud De Grave ,  Nicolas Abele

    IPC: H01H57/00 ,  C23F1/00 ,  H02N1/00

    CPC classification number: H03H9/2463 ,  B81B3/007 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2203/0118 ,  H03H3/0076 ,  H03H9/2447

    Abstract: A microelectromechanical system comprises a beam and an electrode coupled to the beam via electrostatic interaction. The beam is designed to undergo elastic flexural deformation and has an approximately constant cross section. The beam consists of several flat faces that extend over the length of the beam, each having a thickness of less than an external dimension of the cross section. A flexural vibration frequency of the beam is then increased compared with a solid beam of the same external dimensions. Such a microelectromechanical system is suitable for applications requiring very short transition times, or for producing high-frequency oscillators and resonators.

    Abstract translation: 微机电系统包括通过静电相互作用耦合到束的光束和电极。 梁被设计成经历弹性弯曲变形并且具有大致恒定的横截面。 梁包括在梁的长度上延伸的多个平面，每个平面具有小于横截面的外部尺寸的厚度。 然后与相同外部尺寸的实心束相比，梁的弯曲振动频率增加。 这样的微机电系统适用于需要非常短的转换时间或用于产生高频振荡器和谐振器的应用。

    Vacuum packaged single crystal silicon device
    223.
    发明申请
    Vacuum packaged single crystal silicon device 失效
    真空封装单晶硅器件

    公开(公告)号：US20060211169A1

    公开(公告)日：2006-09-21

    申请号：US11322842

    申请日：2005-12-30

    Applicant: Ijaz Jafri ,  Galen Magendanz

    Inventor： Ijaz Jafri ,  Galen Magendanz

    IPC: H01L21/00

    CPC classification number: B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

    Abstract: A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

    Abstract translation: 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

    Manufacturing method of a MEMS structure, a cantilever-type MEMS structure, and a sealed fluidic channel
    224.
    发明申请
    Manufacturing method of a MEMS structure, a cantilever-type MEMS structure, and a sealed fluidic channel 有权
    MEMS结构的制造方法，悬臂式MEMS结构和密封流体通道

    公开(公告)号：US20060166393A1

    公开(公告)日：2006-07-27

    申请号：US11301032

    申请日：2005-12-13

    Applicant: Byeoung-ju Ha ,  Chang-seung Lee

    Inventor： Byeoung-ju Ha ,  Chang-seung Lee

    IPC: H01L21/00

    CPC classification number: B81C1/0092 ,  B81B2201/0214 ,  B81B2201/0271 ,  B81B2201/058 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C1/00952 ,  B81C2201/0115

    Abstract: A method of manufacturing a MEMS structure including forming a porous layer having a predetermined thickness on the top surface of a substrate over an area where a cavity is to be formed; forming the cavity by etching the substrate below the porous layer; forming a membrane layer on the top surface to seal the cavity; and forming a structure on the upper side of the membrane layer. After forming a cantilever structure on the membrane layer and etching the membrane layer, a cantilever structure is produced in a floating state over the cavity. Also, at least one inlet hole and outlet hole can be formed in the porous layer and the membrane, thereby providing a sealed fluidic channel.

    Abstract translation: 一种制造MEMS结构的方法，包括在要形成空腔的区域上的衬底的顶表面上形成具有预定厚度的多孔层; 通过在多孔层下方蚀刻基底来形成空腔; 在顶表面上形成膜层以密封空腔; 并在膜层的上侧形成结构。 在膜层上形成悬臂结构并蚀刻膜层之后，在空腔上以悬浮状态产生悬臂结构。 此外，可以在多孔层和膜中形成至少一个入口孔和出口孔，从而提供密封的流体通道。

    Method of Making a Nanogap for Variable Capacitive Elements, and Device having a Nanogap
    226.
    发明申请
    Method of Making a Nanogap for Variable Capacitive Elements, and Device having a Nanogap 有权
    制造可变电容元件的纳米凹槽的方法，以及具有纳米凹槽的器件

    公开(公告)号：US20040209435A1

    公开(公告)日：2004-10-21

    申请号：US10418617

    申请日：2003-04-17

    Inventor： Aaron Partridge ,  Markus Lutz ,  Thomas Kenny

    IPC: H01L021/20 ,  H01L027/14 ,  H01L021/00

    CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  H01G5/16

    Abstract: A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode and the grown silicon-bearing compound electrode. A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap, the nanogap having a uniform width.

    Abstract translation: 一种用于制造可变电容性装置的方法，包括提供相对于衬底垂直倾斜的基底含硅化合物电极，在所述基底电极上沉积牺牲层，在所述牺牲层上沉积含硅化合物电极，所述牺牲层是 还相对于衬底垂直倾斜，以及从基底含硅化合物电极和生长的含硅复合电极之间移除牺牲层。 一种可变电容式器件，具有固定的垂直倾斜的含硅复合电极和可移动​​的垂直倾斜的含硅复合电极，其通过在基底含硅复合电极上设置牺牲层而制备，将生长的含硅复合电极沉积在 牺牲层，并蚀刻牺牲层。 在固定含硅化合物和可移动的含硅复合电极之间是纳米隙，纳米隙具有均匀的宽度。

    Micromechanical device and method of manufacture thereof
    229.
    发明授权
    Micromechanical device and method of manufacture thereof 失效
    微机械装置及其制造方法

    公开(公告)号：US06740946B2

    公开(公告)日：2004-05-25

    申请号：US10230200

    申请日：2002-08-29

    Applicant: Hideyuki Funaki

    Inventor： Hideyuki Funaki

    IPC: H01L2982

    CPC classification number: H03H9/462 ,  B81B3/0021 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H13/80 ,  H01H59/0009 ,  H01H2001/0078 ,  H01H2201/008 ,  H03H3/0072

    Abstract: A micromechanical switch includes a substrate, at least one pair of support members fixed to the substrate, and at least one pair of beam members placed in proximity and parallel to each other above the substrate, and connected to one of the support members, respectively, each of the beam members having a moving portion which is movable with a gap with respect to the substrate. A contact portion is provided on the moving portion, and a driving electrode is placed on the substrate between the pair of beam members to attract the moving portions of the beam members in a direction in a plane substantially parallel to the substrate with an electrostatic force so that the contact portions of the bean members which are opposed to each other are short-circuited.

    Abstract translation: 微机械开关包括基板，固定到基板的至少一对支撑构件和至少一对梁构件，所述至少一对梁构件分别邻近并平行放置在基板上方并分别连接到支撑构件之一， 每个梁构件具有可相对于基板间隙移动的移动部分。 接触部分设置在移动部分上，并且驱动电极被放置在一对梁构件之间的基板上，以静电力吸引梁构件的移动部分在大致平行于基板的平面中的方向上 豆制品的彼此相对的接触部分短路。

    Ceramic microelectromechanical structure
    230.
    发明授权
    Ceramic microelectromechanical structure 有权
    陶瓷微机电结构

    公开(公告)号：US06738600B1

    公开(公告)日：2004-05-18

    申请号：US09632701

    申请日：2000-08-04

    Applicant: Charles M. Newton ,  Raymond C. Rumpf ,  Carol Gamlen

    Inventor： Charles M. Newton ,  Raymond C. Rumpf ,  Carol Gamlen

    IPC: H04B338

    CPC classification number: B81C1/0015 ,  B81B2201/0271 ,  B81C2201/0109 ,  H01H59/0009 ,  H01P1/127 ,  H05K1/092 ,  H05K3/02 ,  Y10T29/49117 ,  Y10T428/24926 ,  Y10T428/2495

    Abstract: A microelectromechanical structure and method is disclosed. A ceramic substrate preferably is formed from low temperature co-fired ceramic sheets. A low loss photodefinable dielectric planarizing layer is formed over one surface of the ceramic substrate. This layer can be a sacrificial layer or a subsequent sacrificial layer added. A photodefined conductor is printed over the low loss dielectric planarizing layer and formed with the sacrificial layer into a structural circuit component. In one aspect of the invention, a switch is formed with a biasing actuator and deflectable member formed over the biasing actuator and moveable into open and closed circuit positions.

    Abstract translation: 公开了一种微机电结构和方法。 陶瓷基板优选由低温共烧陶瓷片形成。 在陶瓷基板的一个表面上形成低损耗可光限定介电平面化层。 该层可以是牺牲层或随后的牺牲层。 在低损耗介电平面化层上印刷光致定导体，并将牺牲层形成为结构电路部件。 在本发明的一个方面，开关形成有偏置致动器和可偏转构件，该偏置致动器和偏转构件形成在偏置致动器上方并且可移动到打开和闭合的位置。

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