公开(公告)号：US10081705B2

公开(公告)日：2018-09-25

申请号：US14698520

申请日：2015-04-28

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Yan Xia ,  Benjamin R. Sveinbjornsson ,  Robert H. Grubbs ,  Raymond Weitekamp ,  Garret M. Miyake ,  Victoria Piunova ,  Christopher Scot Daeffler

IPC: C08F297/02 ,  C08F297/00 ,  C08L53/00 ,  C08G61/12 ,  C08G81/00 ,  C08F222/04 ,  C08F222/40 ,  C08F293/00 ,  C08F299/00 ,  C08F232/08 ,  B82Y40/00 ,  C08G61/08

CPC classification number: C08G61/124 ,  B81C2201/0149 ,  B82Y40/00 ,  C08F222/04 ,  C08F222/40 ,  C08F232/08 ,  C08F293/00 ,  C08F299/00 ,  C08G61/08 ,  C08G81/00 ,  C08G2261/126 ,  C08G2261/128 ,  C08G2261/1426 ,  C08G2261/146 ,  C08G2261/148 ,  C08G2261/149 ,  C08G2261/3241 ,  C08G2261/3324 ,  C08G2261/418 ,  C08G2261/74

Abstract: The invention provides a class of wedge-type block copolymers having a plurality of chemically different blocks, at least a portion of which incorporates a wedge group-containing block providing useful properties. For example, use of one or more wedge group-containing blocks in some block copolymers of the invention significantly inhibits chain entanglement and, thus, the present block copolymers materials provide a class of polymer materials capable of efficient molecular self-assembly to generate a range of structures, such as periodic nanostructures and microstructures. Materials of the present invention include copolymers having one or more wedge group-containing blocks, and optionally for some applications copolymers also incorporating one or more polymer side group-containing blocks. The present invention also provides useful methods of making and using wedge-type block copolymers.

公开(公告)号：US20180065843A1

公开(公告)日：2018-03-08

申请号：US15554026

申请日：2016-02-10

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO ,  Takanori NISHI

IPC: B81C1/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

CPC classification number: B81C1/00031 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C08F297/00 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/67178 ,  H01L21/67742

Abstract: A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.

公开(公告)号：US09911609B2

公开(公告)日：2018-03-06

申请号：US15606601

申请日：2017-05-26

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu

IPC: H01L51/40 ,  G01N15/06 ,  G01N33/00 ,  G01N33/48 ,  H01L21/033 ,  H01L21/308 ,  B81C1/00 ,  H01L21/768

CPC classification number: H01L21/0338 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/76868 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.

公开(公告)号：US09892918B2

公开(公告)日：2018-02-13

申请号：US15240048

申请日：2016-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Sung Kim ,  Kyeong-Mi Lee ,  Seung-Chul Kwon ,  Jeong-Ju Park ,  Shi-Yong Yi

IPC: G03F7/004 ,  H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00 ,  G03F7/40 ,  G03F7/38 ,  G03F7/16 ,  B81C1/00

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  H01L28/00

Abstract: A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different levels, forming an upper film of hydrophobic material on the lower film, forming a block copolymer film on the upper film, phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern spanning the first patterns and interposed between a bottom surface of each of the first patterns and the upper film, removing the first patterns, and performing an etch process using the second pattern or a residual part of the second pattern as an etch mask.

公开(公告)号：US09809452B2

公开(公告)日：2017-11-07

申请号：US15442952

申请日：2017-02-27

Applicant: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE

Inventor： Babak Nikoobakht, IV

IPC: B82B3/00 ,  B82B1/00 ,  H01L21/306 ,  H01L21/324 ,  H01L21/02 ,  B01L3/00

CPC classification number: B82B3/0019 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0896 ,  B81B2203/033 ,  B81C1/00063 ,  B81C2201/0149 ,  B82B1/001 ,  H01L21/02241 ,  H01L21/30612 ,  H01L21/3245

Abstract: A process for making a nanoduct includes: disposing an etchant catalyst on a semiconductor substrate including a single crystal structure; heating the semiconductor substrate to an etching temperature; introducing an oxidant; contacting the semiconductor substrate with the oxidant in a presence of the etchant catalyst; anisotropically etching the semiconductor substrate by the etchant catalyst in a presence of the oxidant in an etch direction that is coincident along a crystallographic axis of the semiconductor substrate; and forming the nanoduct as the etchant catalyst propagates along a surface of the semiconductor substrate during anisotropically etching the semiconductor substrate, the nanoduct being crystallographically aligned with the crystallographic axis of the semiconductor substrate.

公开(公告)号：US09789458B2

公开(公告)日：2017-10-17

申请号：US14401574

申请日：2013-05-15

Applicant: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V. ,  Ernst-Abbe-Hochschule Jena

Inventor： Christian Williges ,  Christoph Morhard ,  Joachim P. Spatz ,  Robert Brunner

IPC: B01J19/00 ,  B81C1/00 ,  C23C18/06 ,  C23C18/08 ,  B05D3/06 ,  G03F1/68 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: B01J19/0046 ,  B01J2219/00596 ,  B05D3/06 ,  B05D3/068 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  B82Y40/00 ,  C23C18/06 ,  C23C18/08 ,  G03F1/68 ,  Y10T428/24893

Abstract: The invention provides a method for increasing the order of an array of polymeric micelles or of nanoparticles on a substrate surface comprising a) providing an ordered array of micelles or nanoparticles coated with a polymer shell on a substrate surface and b) annealing the array of micelles or nanoparticles by ultrasonication in a liquid medium which is selected from the group comprising H2O, a polar organic solvent and a mixture of H2O and a polar organic solvent. In a related aspect, the invention provides the highly ordered arrays of micelles or nanoparticles obtainable by the methods of the invention.

公开(公告)号：US20170253479A1

公开(公告)日：2017-09-07

申请号：US15442952

申请日：2017-02-27

Applicant: GOVERNMENT OF THE USA, AS REPRESENT BY THE SECRETARY OF COMMERCE

Inventor： BABAK NIKOOBAKHT, IV

IPC: B82B3/00 ,  B01L3/00 ,  H01L21/324 ,  H01L21/02 ,  B82B1/00 ,  H01L21/306

CPC classification number: B82B3/0019 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0896 ,  B81B2203/033 ,  B81C1/00063 ,  B81C2201/0149 ,  B82B1/001 ,  H01L21/02241 ,  H01L21/30612 ,  H01L21/3245

Abstract: A process for making a nanoduct includes: disposing an etchant catalyst on a semiconductor substrate including a single crystal structure; heating the semiconductor substrate to an etching temperature; introducing an oxidant; contacting the semiconductor substrate with the oxidant in a presence of the etchant catalyst; anisotropically etching the semiconductor substrate by the etchant catalyst in a presence of the oxidant in an etch direction that is coincident along a crystallographic axis of the semiconductor substrate; and forming the nanoduct as the etchant catalyst propagates along a surface of the semiconductor substrate during anisotropically etching the semiconductor substrate, the nanoduct being crystallographically aligned with the crystallographic axis of the semiconductor substrate.

公开(公告)号：US20170247492A1

公开(公告)日：2017-08-31

申请号：US15514939

申请日：2015-09-30

Applicant: LG Chem, Ltd.

Inventor： Eun Young CHOI ,  No Jin PARK ,  Jung Keun KIM ,  Je Gwon LEE ,  Se Jin KU ,  Mi Sook LEE ,  Hyung Ju RYU ,  Sung Soo YOON

IPC: C08F293/00 ,  C09D153/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16 ,  C08J5/18 ,  G03F7/039

CPC classification number: C08L53/005 ,  B05D1/005 ,  B05D3/007 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C01P2002/70 ,  C07B2200/00 ,  C08F2/14 ,  C08F32/06 ,  C08F212/08 ,  C08F216/12 ,  C08F220/10 ,  C08F220/26 ,  C08F220/30 ,  C08F293/00 ,  C08F293/005 ,  C08F299/024 ,  C08F2220/301 ,  C08F2438/03 ,  C08G61/08 ,  C08G61/128 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/332 ,  C08G2261/3324 ,  C08G2261/40 ,  C08G2261/418 ,  C08J5/18 ,  C08J7/123 ,  C08J2353/00 ,  C08L53/00 ,  C08L53/02 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/091 ,  G03F7/16 ,  G03F7/162 ,  G03F7/2004 ,  G03F7/30 ,  C08F214/182

Abstract: The present application relates to a block copolymer and uses thereof. The present application can provide a block copolymer—which exhibits an excellent self-assembling property and thus can be used effectively in a variety of applications—and uses thereof.

公开(公告)号：US20170240773A1

公开(公告)日：2017-08-24

申请号：US15518635

申请日：2015-11-10

Applicant: David J. CARTER ,  THE CHARLES STARK DRAPER LABORATORY, INC.

Inventor： David J. Carter

IPC: C09J7/00 ,  B81C1/00

CPC classification number: C09J7/00 ,  B81C1/00206 ,  B81C2201/0149

Abstract: A method of assembly of micro-scale objects includes forming a pattern of a first functional moiety on a surface of a substrate, contacting the surface of the substrate with a first liquid suspension including first micro-scale feedstock elements functionalized with a second functional moiety, complimentary to the first functional moiety, on first portions of the first micro-scale feedstock elements and functionalized with a third functional moiety on second portions of the first micro-scale feedstock elements, aligning the first portions of the first micro-scale feedstock elements with the surface of the substrate, and facilitating bonding the second functional moieties to the first functional moieties to form a first microstructure pattern of the first micro-scale feedstock elements on the surface of the substrate.

公开(公告)号：US20170226260A1

公开(公告)日：2017-08-10

申请号：US15514967

申请日：2015-09-30

Applicant: LG Chem, Ltd.

Inventor： Mi Sook Lee ,  Jung Keun Kim ,  Se Jin Ku ,  No Jin Park ,  Je Gwon Lee ,  Eun Young Choi ,  Sung Soo Yoon ,  Hyung Ju Ryu

IPC: C08F293/00 ,  G03F7/16 ,  C09D153/00

CPC classification number: C08L53/005 ,  B05D1/005 ,  B05D3/007 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C01P2002/70 ,  C07B2200/00 ,  C08F2/14 ,  C08F32/06 ,  C08F212/08 ,  C08F216/12 ,  C08F220/10 ,  C08F220/26 ,  C08F220/30 ,  C08F293/00 ,  C08F293/005 ,  C08F297/00 ,  C08F299/00 ,  C08F299/024 ,  C08F2220/301 ,  C08F2438/03 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/332 ,  C08G2261/3324 ,  C08G2261/40 ,  C08G2261/418 ,  C08J5/18 ,  C08J7/123 ,  C08J2353/00 ,  C08L53/00 ,  C08L53/02 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/091 ,  G03F7/16 ,  G03F7/162 ,  G03F7/165 ,  G03F7/2004 ,  G03F7/30 ,  H01L21/0273 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31058 ,  C08F214/182 ,  C08F261/06

Abstract: The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.