Abstract:
A microreactor for use in a microscope, comprising a first and second cove layer (13), which cover layers are both at least partly transparent to an electron beam (14) of an electron microscope, and extend next to each other at a mutual distance from each other and between which a chamber (15) is enclosed, wherein an inlet (4) and an outlet (5) are provided for feeding fluid through the chamber and wherein heating means (8) are provided for heating the chamber and/or elements present therein.
Abstract:
In a charged particle beam device and a specimen holder for the charged particle beam device each of which comprises a mechanism for blowing with a gas at least partially a specimen to be observed, the mechanism includes small flow rate gas spout openings arranged opposed to each other through the specimen with a small distance between the specimen and each of the small flow rate gas spout openings.
Abstract:
An array of vertically aligned electron emitting nanotips such as multiwall carbon nanotubes are formed and patterned for use as a lithographic stamp. The spacing and/or arrangement of the nanotips correspond to a predetermined pattern that is desired to be formed on an opposing substrate. Simultaneous actuation of the nanotips by a common electrode forms a pattern on the opposing substrate without any necessary scanning techniques or use of masks. Applying a sufficient electrical potential between the array and the substrate generates electron emission from the tips so as to cure a resist, produce localized electrochemical reactions, establish localized electrostatic charge distributions or perform other desirable coating or etching process steps so as to create nanoelectronic circuitry or to facilitate molecular or nanoscale processing.
Abstract:
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
Abstract:
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
Abstract:
Apparatus for electrostatic clamping of a semiconductor wafer includes a dielectric element that defines a clamping surface for receiving the semiconductor wafer and two or more electrodes, including a first electrode disposed at or near a periphery of the clamping surface and a second electrode disposed inwardly of the first electrode. The first and second electrodes have variable widths that form interdigitated projections along adjacent sides of the first and second electrodes. The interdigitated projections limit flexing of the wafer at or near its outer periphery and thereby enhance retention of cooling gas between the semiconductor wafer and the clamping surface.
Abstract:
A plasma ashing chamber that uses an external radiant power source to uniformly heat the wafer is provided with a double plate window through which radiant heat and exhaust gases flow without interfering with each other.
Abstract:
A scanning electron microscope permitting observation of raw biological specimens containing moisture. A vessel accommodating water supplied to the specimen is formed. A passage is formed in the specimen chamber of the microscope to convey the liquid from the vessel to the specimen. A pipe for introducing a gas such as air is connected with the passage. The introduced gas leaks around the specimen after flowing through the passage to prevent the liquid from freezing in the vessel and in the passage when the specimen chamber is evacuated to a vacuum.
Abstract:
A scanning electron microscope useful for obtaining microscopic data or images of wet specimens is provided with comprises an electron source capable of emitting a beam of electrons; an electron optical vacuum column with means for focussing the beam of electrons; means for scanning the focussed beam of electrons across a specimen; a differentially pumped aperture column attached to the electron optical vacuum column and having at least two walls perpendicular to the sides of the differentially pumped aperture column defining a suitable series of pressure gradients, each wall having an aperture aligned to permit the beam of electrons to pass through said differentially pumped aperture column; a specimen chamber which may be maintained at normal atmospheric pressure; a specimen mount; means of preventing the buildup of negative charge on the surface of the specimen; and a detector and image recording system.