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    Method of producing a semiconductor device of SiC
    231.
    发明授权
    Method of producing a semiconductor device of SiC 有权
    制造SiC半导体器件的方法

    公开(公告)号：US06306773B1

    公开(公告)日：2001-10-23

    申请号：US09496085

    申请日：2000-02-01

    Applicant: Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

    Inventor： Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

    IPC: H01L21302

    CPC classification number: B81C1/00595 ,  B81C2201/0114 ,  B81C2201/0133 ,  H01L21/0475

    Abstract: The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.

    Abstract translation: 本发明涉及一种选择性蚀刻SiC的方法，该蚀刻是通过向与含有氟离子的蚀刻溶液接触并具有氧化效应的p型SiC层（3; 8）施加正电位而进行的 在SiC上。 本发明还涉及一种用于制造在SiC衬底上具有自由悬挂部分（即隔膜，悬臂或梁）的SiC微结构的方法，用于制造具有自由悬挂结构的SiC的MEMS器件的方法，以及用于 制造压阻式压力传感器，包括向与所述氟离子的蚀刻溶液接触并对SiC具有氧化作用的p型SiC层（8）施加正电位的步骤。

    Method and apparatus for ultrasonic wet etching of silicon
    232.
    发明授权
    Method and apparatus for ultrasonic wet etching of silicon 有权
    硅超声湿蚀法的方法和装置

    公开(公告)号：US06224713B1

    公开(公告)日：2001-05-01

    申请号：US09395777

    申请日：1999-09-14

    Applicant: David R. Hembree ,  Salman Akram

    Inventor： David R. Hembree ,  Salman Akram

    IPC: H01L2100

    CPC classification number: B81C1/00539 ,  B81B2207/07 ,  B81C1/00626 ,  B81C99/004 ,  B81C2201/0133 ,  G01R1/06738 ,  G01R3/00 ,  H01L21/30608

    Abstract: Methods of forming substantially defect-free silicon structures at the submicron level by enhancing microscopic etchant concentration uniformity and reducing hydrogen bubble adhesion. Etchant mixtures are subjected to the application of ultrasonic waves. The ultrasonic waves promote cavitation that mixes the etchant mixture on a microscopic level, and also assists in promoting bubble detachment. Wetting agents are added to the etchant mixture to enhance the hydrophilicity of the silicon surfaces and thereby reduce bubble adhesion. Apparatus to carry out the method of forming silicon structures are also disclosed.

    Abstract translation: 通过增强微观腐蚀剂浓度均匀性和降低氢气粘附力，在亚微米级别形成基本上无缺陷的硅结构的方法。 蚀刻剂混合物经受超声波的应用。 超声波促进空化，将蚀刻剂混合物在微观层面上混合，并且还有助于促进气泡分离。 将润湿剂加入到蚀刻剂混合物中以增强硅表面的亲水性，从而降低气泡附着力。 还公开了进行形成硅结构的方法的设备。

    Method for forming suspended micromechanical structures
    233.
    发明授权
    Method for forming suspended micromechanical structures 有权
    形成悬浮微机械结构的方法

    公开(公告)号：US6020272A

    公开(公告)日：2000-02-01

    申请号：US169307

    申请日：1998-10-08

    Applicant: James G. Fleming

    Inventor： James G. Fleming

    IPC: B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  H01L21/00

    CPC classification number: B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  B81C2201/053

    Abstract: A micromachining method is disclosed for forming a suspended micromechanical structure from {111} crystalline silicon. The micromachining method is based on the use of anisotropic dry etching to define lateral features of the structure which are etched down into a {111}-silicon substrate to a first etch depth, thereby forming sidewalls of the structure. The sidewalls are then coated with a protection layer, and the substrate is dry etched to a second etch depth to define a spacing of the structure from the substrate. A selective anisotropic wet etchant (e.g. KOH, EDP, TMAH, NaOH or CsOH) is used to laterally undercut the structure between the first and second etch depths, thereby forming a substantially planar lower surface of the structure along a {111} crystal plane that is parallel to an upper surface of the structure. The lateral extent of undercutting by the wet etchant is controlled and effectively terminated by either timing the etching, by the location of angled {111}-silicon planes or by the locations of preformed etch-stops. This present method allows the formation of suspended micromechanical structures having large vertical dimensions and large masses while allowing for detailed lateral features which can be provided by dry etch definition. Additionally, the method of the present invention is compatible with the formation of electronic circuitry on the substrate.

    Abstract translation: 公开了一种从{111}结晶硅形成悬浮微机械结构的微加工方法。 微加工方法基于使用各向异性干蚀刻来限定结构的侧向特征，其被蚀刻成{111} - 硅基底到第一蚀刻深度，从而形成该结构的侧壁。 然后用保护层涂覆侧壁，并且将基底干蚀刻至第二蚀刻深度以限定结构与基底的间隔。 使用选择性各向异性湿蚀刻剂（例如KOH，EDP，TMAH，NaOH或CsOH）横向地削去第一和第二蚀刻深度之间的结构，由此沿{111}晶面形成基本上平面的该结构的下表面， 平行于结构的上表面。 通过湿蚀刻剂的底切的横向范围通过定时蚀刻，倾斜的{111} - 硅面的位置或预先形成的蚀刻停止点的位置来控制和有效地终止。 该本方法允许形成具有大垂直尺寸和大质量的悬浮微机械结构，同时允许可通过干蚀刻定义提供的详细横向特征。 另外，本发明的方法与基板上的电子电路的形成兼容。

    Vibration-Driven Energy Harvesting Element and Method for Manufacturing the Same
    236.
    发明公开
    Vibration-Driven Energy Harvesting Element and Method for Manufacturing the Same 审中-公开

    公开(公告)号：US20240106357A1

    公开(公告)日：2024-03-28

    申请号：US18266963

    申请日：2021-10-13

    Applicant: SAGINOMIYA SEISAKUSHO, INC.

    Inventor： Noriko Shimomura ,  Hisayuki Ashizawa

    IPC: H02N2/18 ,  B81B3/00 ,  B81C1/00

    CPC classification number: H02N2/188 ,  B81B3/0021 ,  B81C1/00166 ,  B81B2203/0136 ,  B81B2203/0163 ,  B81C2201/0132 ,  B81C2201/0133

    Abstract: A great force is prevented from acting on an elastic support section of a MEMS vibration-driven energy harvesting element. A vibration-driven energy harvesting element has a fixed electrode fixed to a base section, a movable electrode movable relative to the fixed electrode, an elastic support section which has one end connected to the base section and the other end connected to the movable electrode and elastically supports the movable electrode, and at least one of a first member which is fixed to the movable electrode and faces the base section or a member fixed to the base section at a distance in a direction orthogonal to a vibration plane on which the movable electrode vibrates, and a second member which is fixed to the base section and faces the movable electrode or a member fixed to the movable electrode at a distance in a direction orthogonal to the vibration plane.

    A Method of Manufacturing a Micro-Fluid Probe
    239.
    发明公开
    A Method of Manufacturing a Micro-Fluid Probe 审中-公开

    公开(公告)号：US20230391613A1

    公开(公告)日：2023-12-07

    申请号：US18249262

    申请日：2021-10-14

    Applicant: CYTOSURGE AG

    Inventor： Edin SARAJLIC

    IPC: B81C1/00

    CPC classification number: B81C1/00111 ,  B81C2201/0198 ,  B81C2201/0132 ,  B81C2201/0133

    Abstract: A method of manufacturing a micro-fluidic probe that is relatively simple comprises providing a pyramidal pit in a substrate with a structural layer. Then metal masking layers using directionally depositing are provided. The angles of deposition are chosen such that for one deposition step the walls are covered but at least one wall is left less or not exposed, whereas for the other deposition said at least one wall is covered except for a bottom section thereof. Thus these deposited layers can be used as masks for etching the structural layer.

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