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    METHOD FOR MANUFACTURING A PROTECTIVE LAYER AGAINST HF ETCHING, SEMICONDUCTOR DEVICE PROVIDED WITH THE PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    232.
    发明申请
    METHOD FOR MANUFACTURING A PROTECTIVE LAYER AGAINST HF ETCHING, SEMICONDUCTOR DEVICE PROVIDED WITH THE PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
    用于制造抗蚀层的保护层的方法，用保护层提供的半导体器件及制造半导体器件的方法

    公开(公告)号：US20160130140A1

    公开(公告)日：2016-05-12

    申请号：US14982380

    申请日：2015-12-29

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Stefano LOSA ,  Raffaella PEZZUTO ,  Roberto CAMPEDELLI ,  Matteo PERLETTI ,  Luigi ESPOSITO ,  Mikel Azpeitia URQUIA

    IPC: B81C1/00

    CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

    Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

    Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。

    Structure and method for integrated microphone
    234.
    发明授权
    Structure and method for integrated microphone 有权
    集成麦克风的结构和方法

    公开(公告)号：US09264833B2

    公开(公告)日：2016-02-16

    申请号：US13973812

    申请日：2013-08-22

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Yao-Te Huang ,  Chin-Yi Cho ,  Li-Min Hung ,  Chun-Wen Cheng

    IPC: H04R19/04 ,  H04R31/00 ,  H04R19/00

    CPC classification number: H04R31/003 ,  B81C1/00158 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/036 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003 ,  H04R2307/027

    Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate; a silicon oxide layer formed on one side of the first silicon substrate; a second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates; and a diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates, wherein the first plate and the diaphragm are configured to form a capacitive microphone.

    Abstract translation: 本公开提供了集成麦克风结构的一个实施例。 集成麦克风结构包括图案化为第一板的第一硅衬底; 形成在所述第一硅衬底的一侧上的氧化硅层; 第二硅衬底，通过所述氧化硅层与所述第一衬底接合，使得所述氧化硅层夹在所述第一和第二硅衬底之间; 以及隔膜，其固定在所述氧化硅层上并且设置在所述第一和第二硅衬底之间，其中所述第一板和所述隔膜被构造成形成电容式麦克风。

    LAYER STRUCTURE FOR A MICROMECHANICAL COMPONENT
    236.
    发明申请
    LAYER STRUCTURE FOR A MICROMECHANICAL COMPONENT 审中-公开
    微机电组件的层结构

    公开(公告)号：US20150232331A1

    公开(公告)日：2015-08-20

    申请号：US14624130

    申请日：2015-02-17

    Applicant: Robert Bosch GmbH

    Inventor： Axel GROSSE ,  Heiko STAHL

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00595 ,  B81B7/0077 ,  B81B2203/06 ,  B81B2207/07 ,  B81C1/00571 ,  B81C2201/0132 ,  B81C2201/053

    Abstract: A layer structure for a micromechanical component, having: a first layer, which is usable both for an electrical wiring of the component and as electrode of the component; and a second layer which is resistant to oxide etching and is disposed below the first layer, the second layer being formed essentially in one plane.

    Abstract translation: 一种用于微机械部件的层结构，具有：第一层，其可用于部件的电线和部件的电极; 以及耐氧化物蚀刻的第二层，并且设置在第一层的下方，第二层基本上形成在一个平面中。

    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures
    238.
    发明授权
    Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures 有权
    用于制造半导体，MEMS和微结构的保护薄膜

    公开(公告)号：US08987029B2

    公开(公告)日：2015-03-24

    申请号：US13286635

    申请日：2011-11-01

    Applicant: Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    Inventor： Jeffrey D. Chinn ,  Boris Kobrin ,  Romuald Nowak

    IPC: H01L21/00 ,  B81C1/00 ,  C23C16/44 ,  C23C16/455 ,  H01L21/312

    CPC classification number: H01L21/02126 ,  B81C1/00896 ,  B81C2201/053 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02263 ,  H01L21/3121

    Abstract: A method of protecting a substrate during fabrication of semiconductor, MEMS devices. The method includes application of a protective thin film which typically has a thickness ranging from 3 angstroms to about 1,000 angstroms, wherein precursor materials used to deposit the protective thin film are organic-based precursors which include at least one fluorine-comprising functional group at one end of a carbon back bone and at least one functional bonding group at the opposite end of a carbon backbone, and wherein the carbon backbone ranges in length from 4 carbons through about 12 carbons. In many applications at least a portion of the protective thin film is removed during fabrication of the devices.

    Abstract translation: 一种在制造半导体MEMS器件期间保护衬底的方法。 该方法包括施加通常具有3埃至约1,000埃厚度的保护薄膜，其中用于沉积保护薄膜的前体材料是基于有机的前体，其包括至少一个含氟官能团 碳骨架的末端和在碳骨架的相对端处的至少一个功能性结合基团，并且其中所述碳骨架的长度为4个碳至约12个碳原子。 在许多应用中，在制造器件期间，保护薄膜的至少一部分被去除。

    METHOD FOR MANUFACTURING A MEMS SENSOR
    240.
    发明申请
    METHOD FOR MANUFACTURING A MEMS SENSOR 有权
    MEMS传感器的制造方法

    公开(公告)号：US20140322854A1

    公开(公告)日：2014-10-30

    申请号：US14331182

    申请日：2014-07-14

    Applicant: ROHM CO., LTD.

    Inventor： Goro NAKATANI ,  Toma FUJITA

    IPC: B81C1/00

    CPC classification number: B81C1/00801 ,  B81B7/02 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C1/00182 ,  B81C2201/053 ,  G01C19/5733 ,  G01C19/5769 ,  G01P15/125 ,  H01L2224/48137

    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.

    Abstract translation: 电容式陀螺传感器包括半导体基板，一体地包括第一基座部分和第一梳齿部分的第一电极和通过处理半导体基板的表面部分而形成的包括第二基底部分和第二梳齿部分的第二电极 。 第一电极具有第一驱动部分，其从在第一基部上的相应的第二梳齿部分相对的部分朝向相应的第二梳齿部分延伸。 第二电极具有形成在与第一驱动部分相对的各个第二梳齿部分的末端部分上的第二驱动部分。 第一驱动部分和第二驱动部分以梳齿的间隔彼此接合。

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