公开(公告)号：US20250081327A1

公开(公告)日：2025-03-06

申请号：US18813147

申请日：2024-08-23

Applicant: ASM IP Holding B.V.

Inventor： Mandar Deshpande

IPC: H05K1/02

Abstract: A non-contact cooling assembly for cooling substrates in equipment front end module in batch is presented. The cooling assembly may comprise a support beam and a plurality of cooling plates, wherein the cooling plates are arranged horizontally stacked and attached to the support beam, and wherein the support beam is configured to move horizontally for cooling substrates. Each of the cooling plates may utilize either thermoelectric cooling effect or cooling fluid for cooling the cooling plates and a cooling plate is placed at a first position (distal position) at first and it moves to a second position (proximal position) for more effective substrate cooling.

公开(公告)号：US20250079234A1

公开(公告)日：2025-03-06

申请号：US18817390

申请日：2024-08-28

Applicant: ASM IP Holding B.V.

Inventor： Hang Zhang

IPC: H01L21/687 ,  H01L21/324

Abstract: A method, system and apparatus for substrate processing that includes a susceptor, a thermal protection plate disposed above the susceptor, the thermal protection plate includes a first lift pin through-hole extending from a top surface of the thermal protection plate to a bottom surface of the thermal protection plate, the susceptor includes a second lift pin through-hole and a plate lift member through-hole, and a plate lift member configured to slidably engage the plate lift member through-hole.

公开(公告)号：US20250079160A1

公开(公告)日：2025-03-06

申请号：US18816044

申请日：2024-08-27

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Devika Choudhury ,  Fu Tang ,  Leonard Rodriguez

IPC: H01L21/02 ,  C23C16/04

Abstract: Methods and systems are disclosed for depositing an oxide in a recess of a substrate, including providing the substrate in a chamber, the substrate including at least one opening to the recess where the at least one opening is bordered by a perimeter in a surface area adjacent to and outside of the recess, where the recess includes an inner surface, pulsing an inhibitor into the chamber to preferentially deposit the inhibitor in a portion of the recess adjacent to at least one opening of the recess and on at least a portion of the surface area, pulsing a precursor into the chamber to chemisorb to the inner surface within the recess, pulsing an oxygen species into the chamber to form the oxide within the recess upon contact with the chemisorbed precursor, and repeating the above recited steps to deposit the oxide to a desired thickness level within the recess.

公开(公告)号：US12243757B2

公开(公告)日：2025-03-04

申请号：US17323288

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Jeroen de Jonge ,  Sumit Sachdeva ,  Lucian Jdira ,  Julien Laurentius Antonius Maria Keijser ,  Theodorus G. M. Oosterlaken

IPC: H01L21/67 ,  F27B17/00 ,  F27D5/00 ,  F27D9/00 ,  H01L21/673

Abstract: The disclosure relates to a flange for a process tube in an apparatus for processing substrates, e.g., a vertical furnace. The flange may be provided with an opening for in use giving access to the process chamber of the process tube and a cooling channel for allowing a cooling fluid to flow there through and cool the flange. A material with a heat conductivity between 0.1 and 40 W/m K may be at least partially provided in between the cooling fluid and the rest of the flange.

公开(公告)号：US12243742B2

公开(公告)日：2025-03-04

申请号：US17233382

申请日：2021-04-16

Applicant: ASM IP Holding B.V.

Inventor： Seunghyun Lee ,  Hyunchul Kim ,  Seungwoo Choi ,  Yeahyun Gu

IPC: H01L21/033 ,  H01L21/02

Abstract: Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.

公开(公告)号：US20250069911A1

公开(公告)日：2025-02-27

申请号：US18812488

申请日：2024-08-22

Applicant: ASM IP Holding B.V.

Inventor： Lucian Jdira ,  Johannes Maria Theodorus van Eijden ,  Theodorus G.M. Oosterlaken ,  Julien Laurentius Antonius Maria Keijser ,  Radko Bankras ,  Herbert Terhorst

IPC: H01L21/67 ,  H01L21/673

Abstract: An apparatus for processing a plurality of substrates is provided. The apparatus may have a process tube creating a process chamber and a door configured to support substrates in the process chamber and to seal the process chamber. The apparatus may have a gas injector to provide process gas into the process chamber. The gas injector may be operably connected to a process gas line in a purge chamber to purge the connection between the gas injector and the process gas line.

公开(公告)号：US12237182B2

公开(公告)日：2025-02-25

申请号：US18589252

申请日：2024-02-27

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/67

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

公开(公告)号：US12234554B2

公开(公告)日：2025-02-25

申请号：US17810094

申请日：2022-06-30

Applicant: ASM IP HOLDING B.V.

Inventor： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

IPC: C23C16/458 ,  C23C16/455

Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

公开(公告)号：US12227835B2

公开(公告)日：2025-02-18

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20250051918A1

公开(公告)日：2025-02-13

申请号：US18927164

申请日：2024-10-25

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC: C23C16/458 ,  C23C16/22 ,  C23C16/52

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.