公开(公告)号：US10202684B2

公开(公告)日：2019-02-12

申请号：US14466242

申请日：2014-08-22

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh

IPC: C23C14/58 ,  H01J37/32 ,  G02B1/12 ,  G02B1/02 ,  H01J37/05 ,  H01J37/317 ,  H01J37/147

Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

公开(公告)号：US10181402B2

公开(公告)日：2019-01-15

申请号：US15047553

申请日：2016-02-18

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

IPC: H01L29/167 ,  H01J37/05 ,  H01L21/265 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317

Abstract: A method of treating a surface of a silicon substrate forms an accelerated gas cluster ion beam of carbon atoms, promotes fragmentation and/or dissociation of gas cluster ions in the beam, removes charged particles from the beam to form a neutral beam, and treats a portion of a surface of the silicon substrate by irradiating it with the neutral beam. A silicon substrate surface layer of SiCX (0.05

公开(公告)号：US20160172197A1

公开(公告)日：2016-06-16

申请号：US15047553

申请日：2016-02-18

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick ,  Michael J. Walsh ,  Richard C. Svrluga

IPC: H01L21/265 ,  H01L29/167

CPC classification number: H01L21/2652 ,  C03C23/005 ,  C03C2204/08 ,  H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01J2237/31701 ,  H01L21/02115 ,  H01L21/02238 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/324 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

Abstract translation: 用于处理硅衬底和硅衬底的方法提供用加速中性束处理的表面。

公开(公告)号：US20130213933A1

公开(公告)日：2013-08-22

申请号：US13590405

申请日：2012-08-21

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

IPC: G01N23/00

CPC classification number: G01N23/00 ,  G01N23/225 ,  H01J37/08 ,  H01J37/305 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/3151

Abstract: Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.

Abstract translation: 公开了用于采用从加速气体团簇离子束衍生的加速中性束作为物理蚀刻光束的设备和方法，用于在蚀刻表面提供减少的材料混合，与先前的技术相比。 这样就可以通过SIMS和XPS（或ESCA）分析仪器等分析仪器在测量中实现改进的深度分布分辨率。

公开(公告)号：US06491800B2

公开(公告)日：2002-12-10

申请号：US09901203

申请日：2001-07-09

Applicant: Allen R. Kirkpatrick ,  Vincent DiFilippo

Inventor： Allen R. Kirkpatrick ,  Vincent DiFilippo

IPC: C23C1434

CPC classification number: C23F4/00 ,  A61F2/30767 ,  A61F2/3094 ,  A61F2/34 ,  A61F2002/30685 ,  A61F2002/30934 ,  A61F2002/3611 ,  A61F2310/00029 ,  C23C14/48 ,  C23C14/505 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/336

Abstract: The application of gas cluster ion beam (GCIB) technology in order to modify the surface of a surgical implant such as the components of an artificial hip joint, thereby substantially reducing wear debris and osteolysis complications is disclosed. The approach of the surface modification comprises an atomic level surface smoothing utilizing GCIB to super smooth the femoral heads and/or the surfaces of the acetabular cups to reduce frictional wear at the interface of the bearing surfaces. A reduction in polyethylene debris and metal debris by GCIB smoothing on one or both bearing surfaces of a surgical implant reduces osteolysis, results in a substantial cost savings to the healthcare system, and reduces patient pain and suffering.

Abstract translation: 公开了采用气体簇离子束（GCIB）技术来改变手术植入物的表面，例如人造髋关节的组分，从而显着减少磨损碎屑和骨质溶解并发症。 表面改性的方法包括使用GCIB的原子水平表面平滑以使股骨头和/或髋臼杯的表面超平滑以减少在支承表面的界面处的摩擦磨损。 在手术植入物的一个或两个支承表面上通过GCIB平滑化减少聚乙烯碎屑和金属碎屑减少了骨质溶解，导致了医疗保健系统的显着成本节省，并且减少了患者的疼痛和痛苦。

公开(公告)号：US06331227B1

公开(公告)日：2001-12-18

申请号：US09461148

申请日：1999-12-14

Applicant: Jerald P. Dykstra ,  David J. Mount, Sr. ,  Wesley J. Skinner ,  Allen R. Kirkpatrick

Inventor： Jerald P. Dykstra ,  David J. Mount, Sr. ,  Wesley J. Skinner ,  Allen R. Kirkpatrick

IPC: H01J3700

CPC classification number: H01J37/147 ,  H01J2237/0044 ,  H01J2237/0203 ,  H01J2237/0812 ,  H01J2237/3151 ,  H01L21/31138

Abstract: A gas cluster ion beam (GCIB) etching apparatus having a system for producing a gas cluster ion beam utilized to controllably etch a substrate. The gas cluster ion beam is initially directed along a preselected longitudinal axis. A portion of the GCIB etching apparatus is operably connected to the beam producing system and contains the substrate to be etched when impacted by said gas cluster ion beam. The portion of the GCIB etching apparatus includes a system for directing the gas cluster ion beam in a direction offset from the preselected longitudinal axis while permitting unwanted ionizing radiation to remain directed along the longitudinal axis. A substrtate holder is located within a portion of the GCIB etching apparatus for positioning the substrate in line with the offset gas cluster ion beam during the etching process, and the unwanted ionizing radiation being substantially prevented from impinging upon the substrate during the etching process.

Abstract translation: 一种具有用于可控制地蚀刻衬底的用于产生气体簇离子束的系统的气体簇离子束（GCIB）蚀刻装置。 气体簇离子束最初沿着预选的纵向轴线引导。 GCIB蚀刻装置的一部分可操作地连接到光束产生系统，并且当被所述气体簇离子束撞击时包含待蚀刻的衬底。 GCIB蚀刻装置的一部分包括一个系统，用于将气体簇离子束沿预定的纵向轴线偏移的方向引导，同时允许不需要的电离辐射沿着纵向轴线保持定向。 衬底保持器位于GCIB蚀刻设备的一部分内，用于在蚀刻过程期间将衬底与偏移气体簇离子束对准，并且在蚀刻过程中基本上防止不需要的电离辐射撞击到衬底上。

公开(公告)号：US4179324A

公开(公告)日：1979-12-18

申请号：US855418

申请日：1977-11-28

Applicant: Allen R. Kirkpatrick

Inventor： Allen R. Kirkpatrick

IPC: H01L21/683 ,  H01L23/15 ,  B32B31/00

CPC classification number: H01L21/6833 ,  H01L23/15 ,  H01L2924/0002

Abstract: A semiconductor thin film and glass stratum laminate is formed by depositing a semiconductor thin film onto a temporary substrate having a carbon coating to which the film adheres. Processing of the semiconductor thin film for selected performance characteristics is accomplished while the film is affixed to the temporary substrate. The processed thin film is transferred and electrostatically bonded to the glass stratum by exposure to a thermal environment at or below the softening point of the glass stratum and by application of an electric potential across the thin film and glass. The bonded thin film and glass stratum laminate is separated from the temporary substrate.

Abstract translation: 通过将半导体薄膜沉积到具有膜附着到其上的碳涂层的临时衬底上来形成半导体薄膜和玻璃层层压体。 当膜固定到临时衬底时，完成用于所选性能特性的半导体薄膜的处理。 处理的薄膜通过暴露于玻璃层的软化点处或低于玻璃层的软化点的热环境并通过在薄膜和玻璃上施加电位而被转移并静电地结合到玻璃层。 将粘合的薄膜和玻璃层层压板与临时基板分离。