Abstract:
A charged particle beam microscope device of the present invention is configured such that in a diffraction pattern obtained by radiating a parallel charged particle beam onto a sample (22) having a known structure, a distance (r) between spots of a diffraction pattern, which reflects the structure of the sample, is measured, and the variation of a distance (L) between the sample and a detector, which depends on a diffraction angle (θ), is corrected. This enables the correction of distortion that varies with an off-axis distance from the optical axis in a diffraction pattern, and a high precision structural analysis by performing accurately analyzing the spot positions of the diffraction pattern.
Abstract:
An lithography apparatus for manufacturing an organic transistor that is capable of aligning accurately in self-alignment fashion relative positions of a gate electrode and a pair of source and drain electrodes and has high productivity. In an lithography apparatus for radiating a light to a photosensitive self-assembled film and exposing the same in self-aligning fashion using a gate electrode as a mask, by transporting a flexible translucent substrate from roller to roller and forming a gate electrode, an insulating layer, and the photosensitive self-assembled film on the flexible substrate when an organic transistor is formed on the flexible substrate, a reflection preventing film is provided on an inner wall of the apparatus that is on the opposite side of the flexible substrate as seen from an exposure light source.
Abstract:
A charged particle beam exposure apparatus for writing a desired pattern on a substrate using a charged particle beam. The apparatus includes a blanking unit, having a deflector capable of deflecting the charged particle beam in at least two directions, configured to control beam passage to the substrate by deflecting the charged particle beam, and a setting unit configured to set a deflection direction of the charged particle beam by the deflector.
Abstract:
Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
Abstract:
The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.
Abstract:
A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.
Abstract:
In a charged particle exposure apparatus which exposes a substrate using a blanking unit to repeat blocking and exposure of charged particle beam to the substrate, a blanking direction is adjusted. As an example of the blanking direction, a direction vertical to a raster scanning direction is used.
Abstract:
An improved, compact, lightweight handy-phone provided with a built-in directional planar antenna is provided. The planar antenna is mounted on a portion of a high-frequency printed wiring board, and a shielding case covers the high-frequency printed wiring board with a surface of the portion exposed. A maximum linear size of the shielding case in the direction of main polarization of the planar antenna is nearly equal to half the wavelength of an electromagnetic wave to be radiated by the planar antenna.