中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

46 records (took 0.02 seconds)

    Mechanical enhancer additives for low dielectric films
    27.
    发明授权
    Mechanical enhancer additives for low dielectric films 有权
    用于低介电膜的机械增强剂添加剂

    公开(公告)号：US08137764B2

    公开(公告)日：2012-03-20

    申请号：US10842503

    申请日：2004-05-11

    Applicant: Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    Inventor： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    IPC: C23C10/06 ,  C23C16/24

    CPC classification number: C03C11/00 ,  C03C3/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/31663

    Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

    Abstract translation: 本文公开了一种通过调节混合物内的有机基团如甲基的量来制备具有增强的机械性能的低介电常数有机硅酸盐（OSG）的化学气相沉积方法。 在本发明的一个实施方案中，OSG膜由包含第一含硅前体的混合物沉积，该第一含硅前体包含每Si原子3至4个Si-O键，0至1个选自Si -H，Si-Br和Si-Cl键，并且不具有Si-C键，并且每个Si原子包含至少一个Si-C键的第二含硅前体。 在本发明的另一个实施方案中，OSG膜由包含不对称含硅前体的混合物沉积。 在任一实施方案中，混合物还可含有孔原体前体以提供多孔OSG膜。

    LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES
    28.
    发明申请
    LOW K PRECURSORS PROVIDING SUPERIOR INTEGRATION ATTRIBUTES 有权
    提供高级整合属性的低K前提

    公开(公告)号：US20110308937A1

    公开(公告)日：2011-12-22

    申请号：US12969042

    申请日：2010-12-15

    Applicant: Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    Inventor： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    IPC: C09D183/04 ,  C23C14/10 ,  C08J7/18

    CPC classification number: H01L21/02214 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348

    Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

    Abstract translation: 一种用于生产多孔有机硅玻璃膜的沉积物，其特征在于，包括：在真空室中引入包括有机硅烷或有机硅氧烷的一种前体的气态试剂和与前体不同的致孔剂，其中致孔剂本质上是芳族的; 向室中的气态试剂施加能量以诱导气态试剂沉积含有致孔剂的膜的反应; 并通过紫外线辐射去除基本上所有的有机材料，以提供具有小于2.6的孔隙和介电常数的多孔膜。

    Process For Restoring Dielectric Properties
    30.
    发明申请
    Process For Restoring Dielectric Properties 有权
    恢复介电性能的工艺

    公开(公告)号：US20100041234A1

    公开(公告)日：2010-02-18

    申请号：US12540395

    申请日：2009-08-13

    Applicant: Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    Inventor： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Mary Kathryn Haas ,  Laura M. Matz ,  Glenn Michael Mitchell ,  Aiping Wu ,  Raymond Nicholas Vrtis ,  John Giles Langan

    IPC: H01L21/311

    CPC classification number: H01L21/3105

    Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

    Abstract translation: 一种用于制备层间电介质以最小化对中间层介电特性的损害的方法，所述方法包括以下步骤：在衬底上沉积含硅介电材料的层，其中所述层具有第一介电常数，并且其中所述层具有 至少一个表面; 通过包括至少一个蚀刻工艺和暴露于湿化学组合物以提供蚀刻层的方法在该层中提供蚀刻图案，其中所述蚀刻层具有第二介电常数，并且其中所述湿化学成分贡献于0至 40％的第二介电常数; 使层的至少一个表面与含硅流体接触; 任选地除去含硅流体的第一部分，使得含硅流体的第二部分保持与层的至少一个表面接触; 以及将所述层的所述至少一个表面暴露于UV辐射和热能，其中所述层具有恢复到相对于所述第二介电常数恢复至少90％的值的第三介电常数。

Patent Agency Ranking