公开(公告)号：US11213853B2

公开(公告)日：2022-01-04

申请号：US16657307

申请日：2019-10-18

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/40 ,  B05D3/10 ,  C23C18/06 ,  C23C18/12 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US20210285097A1

公开(公告)日：2021-09-16

申请号：US17331971

申请日：2021-05-27

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  C23C16/18 ,  C23C16/22

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US10662533B2

公开(公告)日：2020-05-26

申请号：US16390385

申请日：2019-04-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20190333761A1

公开(公告)日：2019-10-31

申请号：US16504861

申请日：2019-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3065 ,  C23C16/56 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20190244786A1

公开(公告)日：2019-08-08

申请号：US16390319

申请日：2019-04-22

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC: H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00

CPC classification number: H01J37/32009 ,  C23F1/12 ,  C23G5/00 ,  H01L21/31116 ,  H01L21/32135

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US10373820B2

公开(公告)日：2019-08-06

申请号：US15170769

申请日：2016-06-01

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/285 ,  C23C16/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/56

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20150217330A1

公开(公告)日：2015-08-06

申请号：US14612784

申请日：2015-02-03

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: B05D3/10 ,  C23C26/00

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

Abstract translation: 提供了用于相对于基板的第二不同表面在基板的第一表面上选择性地沉积材料的方法。 选择性沉积的材料可以是例如金属，金属氧化物或介电材料。

公开(公告)号：US20250037995A1

公开(公告)日：2025-01-30

申请号：US18914767

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US12154785B2

公开(公告)日：2024-11-26

申请号：US17814161

申请日：2022-07-21

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US11975357B2

公开(公告)日：2024-05-07

申请号：US17547083

申请日：2021-12-09

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/06 ,  B05D3/10 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C18/06 ,  C23C18/12

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.