公开(公告)号：US20240177992A1

公开(公告)日：2024-05-30

申请号：US18519172

申请日：2023-11-27

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Shaoren Deng ,  Giuseppe Alessio Verni ,  Daria Nevstrueva ,  Marko Tuominen ,  Charles Dezelah ,  Daniele Chiappe ,  Eva Elisabeth Tois ,  Viraj Madhiwala ,  Michael Givens

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/0228

Abstract: The disclosure relates to methods of forming organic polymers comprising polyimide and layers comprising the same and to methods of reducing polyamic acid content of an organic polymer. The embodiments of the disclosure further relate to methods of fabricating semiconductor devices, to selectively depositing a material on a surface of a semiconductor substrate and to semiconductor processing assemblies. The methods are characterized by contacting a polyimide-containing material, such as a layer, with a modifying agent that increases the proportion of polyimide in the organic polymer material.

公开(公告)号：US20240153767A1

公开(公告)日：2024-05-09

申请号：US18386128

申请日：2023-11-01

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Andrea Illiberi ,  Michael Givens ,  Charles Dezelah ,  Eric Shero

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

CPC classification number: H01L21/02565 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

Abstract: Disclosed are methods and systems for depositing layers including a p-type semiconducting oxide onto a surface of a substrate. The deposition process includes a cyclical deposition process. Exemplary structures in which the layers may be incorporated include 3D NAND cells, memory devices, metal-insulator-metal structured, and DRAM capacitors.

公开(公告)号：US20230139917A1

公开(公告)日：2023-05-04

申请号：US18050128

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Viraj Madhiwala ,  Daniele Chiappe ,  Marko Tuominen ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGuy Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.

公开(公告)号：US20230101229A1

公开(公告)日：2023-03-30

申请号：US17953585

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Viljami Pore ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/02

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

公开(公告)号：US20230006031A1

公开(公告)日：2023-01-05

申请号：US17850087

申请日：2022-06-27

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Michael Givens

IPC: H01L49/02 ,  H01L21/285 ,  H01L21/02

Abstract: A noble metal liner and a metal-insulator-metal (MIM) capacitor (MIMCAP) are described along with the methods of manufacture or fabrication. The MIM capacitor includes a liner formed of a thin layer or film of a noble metal, which is only a few nanometers thick, e.g., a thickness in the range of about 0.5 nm to about 5 nm or more. In a finished device such as a MIM capacitor, the noble metal liner is sandwiched between a thicker electrode and the insulator, e.g., a layer or thin film of high or ultra high-k material, thereby providing a cap for the electrode to limit leakage currents in the device.

公开(公告)号：US11242598B2

公开(公告)日：2022-02-08

申请号：US16563473

申请日：2019-09-06

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Givens ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/32 ,  H01L29/49

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

公开(公告)号：US20210399111A1

公开(公告)日：2021-12-23

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/455 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/34

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US09478419B2

公开(公告)日：2016-10-25

申请号：US14133511

申请日：2013-12-18

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/336 ,  H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US20150170914A1

公开(公告)日：2015-06-18

申请号：US14133511

申请日：2013-12-18

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/02

CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在基板表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

公开(公告)号：US20140322862A1

公开(公告)日：2014-10-30

申请号：US14256728

申请日：2014-04-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Vladimir Machkaoutsan ,  Jan Willem Maes ,  Michael Givens ,  Petri Raisanen

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  G11C13/0007 ,  G11C2213/71 ,  H01L45/08 ,  H01L45/085 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1641

Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.

Abstract translation: 公开了一种形成电阻随机存取存储器（RRAM）装置的方法。 该方法包括：形成第一电极，通过热原子层沉积（ALD）形成包含金属氧化物的电阻式开关氧化物层，用与形成金属氧化物的金属不同的金属掺杂剂掺杂电阻式开关氧化物层，以及形成第二电极 通过热原子层沉积（ALD），其中电阻式开关层介于第一电极和第二电极之间。 在一些实施例中，在沉积金属氧化物之后，可以进行形成电阻式开关氧化物而不使开关氧化物层的表面暴露于表面改性等离子体处理。