公开(公告)号：US20030129308A1

公开(公告)日：2003-07-10

申请号：US10295770

申请日：2002-11-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Ling Chen ,  Mei Chang

IPC: C23C016/00

CPC classification number: H01L21/76877 ,  C23C16/18 ,  C23C16/4402 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/7681 ,  Y10S438/905

Abstract: Methods of forming copper films by sequentially introducing and then reacting nitrogen containing analogs of Copper II null-diketonates which analogs are more stable source reagents for copper deposition. The nitrogen containing analogs replace nullOnull with nullN(Rnull)null wherein Rnull is an alkyl group having from one to four carbon atoms. Replacement of each nullOnull is preferred although replacement of one nullOnull per cyclic ring is sufficient to improve stability of the copper source reagents. The source reagent can be purified by sublimation to remove solvents and excess ligands prior to semiconductor processing. The processing chamber is preferably a cyclical deposition chamber maintained at a pressure of less than about 10 Torr and the substrate is maintained at a temperature of about 50 to about 200null C.

Abstract translation: 通过依次引入和然后使含有铜IIβ-二酮的类似物的反应形成铜膜的方法，其中类似物是用于铜沉积的更稳定的源试剂。 含氮的类似物用-N（R“） - 取代-O-，其中R”是具有1-4个碳原子的烷基。 每个-O-的替代是优选的，尽管每个环的一个-O-取代足以提高铜源试剂的稳定性。 源试剂可以通过升华纯化，以在半导体加工之前除去溶剂和过量的配体。 处理室优选是保持在小于约10托的压力下的循环沉积室，并且基板保持在约50至约200℃的温度。

公开(公告)号：US20030082301A1

公开(公告)日：2003-05-01

申请号：US10199415

申请日：2002-07-18

Applicant: Applied Materials, Inc.

Inventor： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

IPC: C23C016/00 ,  B05D001/36

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

Abstract: A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Abstract translation: 提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。 一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。 难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

公开(公告)号：US20030022507A1

公开(公告)日：2003-01-30

申请号：US09851519

申请日：2001-05-07

Applicant: Applied Materials, Inc.

Inventor： Ling Chen ,  Christophe Marcadal ,  Hyungsuk Alexander Yoon

IPC: H01L021/302

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/76856 ,  H01L21/76862

Abstract: The present invention provides a method of forming a titanium silicon nitride barrier layer on a semiconductor wafer, comprising the steps of depositing a titanium nitride layer on the semiconductor wafer; plasma-treating the titanium nitride layer in a N2/H2 plasma; and exposing the plasma-treated titanium nitride layer to a silane ambient, wherein silicon is incorporated into the titanium nitride layer as silicon nitride thereby forming a titanium silicon nitride barrier layer. Additionally, there is provided a method of improving the barrier performance of a titanium nitride layer comprising the step of introducing silicon into the titanium nitride layer such that the silicon is incorporated into the titanium nitride layer as silicon nitride. Also provided is a method of integrating copper into a semiconductor device and a method of improving copper wettability at a copper/titanium nitride interface in a semiconductor device.

公开(公告)号：US20020190379A1

公开(公告)日：2002-12-19

申请号：US10104842

申请日：2002-03-22

Applicant: Applied Materials, Inc.

Inventor： Ping Jian ,  Seshadri Ganguli ,  Karl A. Littau ,  Christophe Marcadal ,  Ling Chen

IPC: H01L021/44

CPC classification number: C23C16/0281 ,  C23C16/16 ,  H01L21/28556

Abstract: In accordance with the present invention, a method is provided for forming an improved tungsten layer. In one embodiment, a CVD method for depositing a tungsten layer on a substrate includes forming a bilayer of titanium-nitride/titanium (TiN/Ti) over the substrate, placing the substrate in a deposition zone of a substrate processing chamber, and introducing a fluorine-free tungsten-containing precursor and a carrier gas into the deposition zone for forming a tungsten nucleation layer over the TiN/Ti bilayer. The Ti layer is between the TiN layer and the substrate. After the tungsten nucleation formation, a process gas including a tungsten-containing source and a reduction agent are introduced into the deposition zone for forming the bulk tungsten layer. In one embodiment, the fluorine-free tungsten-containing precursor includes W(CO)6, and the carrier gas is Argon.

Abstract translation: 根据本发明，提供一种用于形成改进的钨层的方法。 在一个实施例中，用于在衬底上沉积钨层的CVD方法包括在衬底上形成氮化钛/钛（TiN / Ti）的双层，将衬底放置在衬底处理室的沉积区中，并引入 无氟含钨前体和载气进入沉积区，用于在TiN / Ti双层上形成钨成核层。 Ti层位于TiN层和衬底之间。 在钨成核形成之后，将包含含钨源和还原剂的工艺气体引入用于形成体钨层的沉积区中。 在一个实施方案中，无氟含钨前体包括W（CO）6，载气为氩。

公开(公告)号：US20020060363A1

公开(公告)日：2002-05-23

申请号：US10052681

申请日：2002-01-17

Applicant: Applied Materials, Inc.

Inventor： Ming Xi ,  Paul Frederick Smith ,  Ling Chen ,  Michael X. Yang ,  Mei Chang ,  Fusen Chen ,  Christophe Marcadal ,  Jenny C. Lin

IPC: H01L021/4763 ,  H01L021/44

CPC classification number: H01L21/76804 ,  C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.

Abstract translation: 本发明的实施例提供了用金属（例如铜）在衬底上填充图案化特征的工艺顺序和相关硬件。 序列包括首先在图案化特征中形成可靠的阻挡层，以防止金属扩散到通过其形成图案化特征的电介质层。 一个序列包括在图案化电介质上形成大致共形的阻挡层，在图案化特征的底部蚀刻阻挡层，沉积第二阻挡层，然后用诸如铜的金属填充图案化的特征。

公开(公告)号：US20040009665A1

公开(公告)日：2004-01-15

申请号：US10441242

申请日：2003-05-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Ling Chen ,  John A.T. Norman ,  Mei Chang

IPC: C23C016/18 ,  H01L021/44

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28562

Abstract: A method of forming a copper film on a substrate is described. The copper film is formed using a cyclical deposition technique by alternately adsorbing a copper-containing precursor and a reducing gas on a substrate. The copper film formation is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the copper film may be used as interconnect metallization.

Abstract translation: 描述了在基板上形成铜膜的方法。 使用循环沉积技术通过在基底上交替吸附含铜前体和还原气体来形成铜膜。 铜膜形成与集成电路制造工艺兼容。 在一个集成电路制造工艺中，铜膜可以用作互连金属化。

公开(公告)号：US20030082307A1

公开(公告)日：2003-05-01

申请号：US10193333

申请日：2002-07-10

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Ling Chen

IPC: B05D005/12 ,  B05D001/36 ,  B05D003/10

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

Abstract: A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Abstract translation: 提供了一种在基板上形成金属互连的方法。 该方法包括通过交替地引入一种或多种含金属化合物的脉冲和一个或多个氮 - 氧化合物的脉冲，在金属层的至少一部分上沉积厚度小于约20埃的难熔金属阻挡层， 含有化合物。 该方法还包括在阻挡层的至少一部分上沉积种子层，以及在种子层的至少一部分上沉积第二金属层。 阻挡层提供足够的阻挡性能并且允许金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强互连的电性能。

公开(公告)号：US20030059538A1

公开(公告)日：2003-03-27

申请号：US09965370

申请日：2001-09-26

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC: B05D003/10 ,  B05D001/36 ,  B05D005/12 ,  C23C016/00

CPC classification number: C23C16/45525 ,  C23C16/34 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/42 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873 ,  H01L2221/1089

Abstract: The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.

公开(公告)号：US20010016429A1

公开(公告)日：2001-08-23

申请号：US09755009

申请日：2001-01-05

Applicant: Applied Materials, Inc.

Inventor： Alfred Mak ,  Ling Chen ,  David C. Smith ,  Mei Chang ,  Steve Ghanayem

IPC: H01L021/31 ,  B05C011/10 ,  G11B003/68

CPC classification number: H01L21/76843 ,  C23C16/0245 ,  C23C16/14 ,  C23C16/34 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/66583

Abstract: A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

Abstract translation: 在晶片的上表面上沉积一层氮化钨。 通过提供气体混合物并向气体混合物提供能量以形成等离子体来进行沉积。 气态混合物包括含钨的第一气态组合物和含有氮和氢的第二气态组合物。 第二气态组合物是不与第一气态组合物进行气相反应以形成氮化钨的组合物，除非向气体混合物提供能量。 第一气体组合物可以是六氟化钨（WF 6）。 气体混合物可以通过向其提供来自rf信号的能量而输入能量以形成等离子体。 在等离子体中，氮离解成氮离子，钨与氟分离。 氮离子和钨然后结合形成氮化钨（W2N），其沉积在晶片的上表面上。