公开(公告)号：US20210335574A1

公开(公告)日：2021-10-28

申请号：US16856878

申请日：2020-04-23

Applicant: Applied Materials, Inc.

Inventor： Fang Ruan ,  Prashant Kumar Kulshreshtha ,  Rajaram Narayanan ,  Diwakar Kedlaya

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/458 ,  C23C16/50 ,  C23C16/455

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a plurality of recesses extending about and radially outward of the plurality of apertures. Each recess of the plurality of recesses may extend from the second surface of the faceplate to a depth less than a thickness of the faceplate.

公开(公告)号：US10971364B2

公开(公告)日：2021-04-06

申请号：US16219557

申请日：2018-12-13

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC: C23C16/32 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

公开(公告)号：US10923334B2

公开(公告)日：2021-02-16

申请号：US16403489

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Satya Thokachichu ,  Edward P. Hammond, IV ,  Viren Kalsekar ,  Zheng John Ye ,  Sarah Michelle Bobek ,  Abdul Aziz Khaja ,  Vinay K. Prabhakar ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.

公开(公告)号：US10403535B2

公开(公告)日：2019-09-03

申请号：US14824229

申请日：2015-08-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Jay D. Pinson, II ,  Hiroji Hanawa ,  Jianhua Zhou ,  Xing Lin ,  Ren-Guan Duan ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Swayambhu P. Behera ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Prashant Kumar Kulshreshtha ,  Jason K. Foster ,  Mukund Srinivasan ,  Uwe P. Haller ,  Hari K. Ponnekanti

IPC: H02N13/00 ,  H01L21/683 ,  H01L21/687

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

公开(公告)号：US10128088B2

公开(公告)日：2018-11-13

申请号：US15166328

申请日：2016-05-27

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Abdul Aziz Khaja ,  Zheng John Ye ,  Amit Kumar Bansal

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/458 ,  C23C16/02 ,  C23C16/34 ,  C23C16/36 ,  C23C16/44 ,  C23C16/509

Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.

公开(公告)号：US20180096843A1

公开(公告)日：2018-04-05

申请号：US15816520

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/311 ,  H01L21/66 ,  C23C16/26 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US12191115B2

公开(公告)日：2025-01-07

申请号：US16694062

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Xiaoquan Min ,  Zheng John Ye ,  Prashant Kumar Kulshreshtha ,  Vinay K Prabhakar ,  Lu Xu ,  Kwangduk Douglas Lee

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

公开(公告)号：US12112949B2

公开(公告)日：2024-10-08

申请号：US17963059

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Sarah Bobek ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee ,  Harry Whitesell ,  Hidetaka Oshio ,  Dong Hyung Lee ,  Deven Matthew Raj Mittal ,  Scott Falk ,  Venkataramana R. Chavva

IPC: H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/0338 ,  C23C16/26 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31122 ,  H01L21/31155

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

公开(公告)号：US11830706B2

公开(公告)日：2023-11-28

申请号：US16703140

申请日：2019-12-04

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Jian Li ,  Satish Radhakrishnan ,  Rui Cheng ,  Diwakar N. Kedlaya ,  Juan Carlos Rocha-Alvarez ,  Umesh M. Kelkar ,  Karthik Janakiraman ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Byung Seok Kwon

IPC: H01L21/67 ,  H05B3/10 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/46 ,  H05B3/14

CPC classification number: H01J37/32724 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/67103 ,  H05B3/10 ,  H05B3/143 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：US11322352B2

公开(公告)日：2022-05-03

申请号：US16853283

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Lu Xu ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee

IPC: H01L21/033 ,  H01L21/02

Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.