公开(公告)号：US10403535B2

公开(公告)日：2019-09-03

申请号：US14824229

申请日：2015-08-12

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Jay D. Pinson, II ,  Hiroji Hanawa ,  Jianhua Zhou ,  Xing Lin ,  Ren-Guan Duan ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Swayambhu P. Behera ,  Sungwon Ha ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Prashant Kumar Kulshreshtha ,  Jason K. Foster ,  Mukund Srinivasan ,  Uwe P. Haller ,  Hari K. Ponnekanti

IPC: H02N13/00 ,  H01L21/683 ,  H01L21/687

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

公开(公告)号：US20220248500A1

公开(公告)日：2022-08-04

申请号：US17167904

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Uwe P. Haller ,  Kiyki-Shiy N. Shang ,  Dmitry A. Dzilno

IPC: H05B1/02 ,  H01J37/32 ,  H02M1/10

Abstract: A method of providing power to a plurality of heaters in multiple zones for wafer-processing equipment may include causing a voltage to be supplied to a plurality of power leads configured to supply the voltage to a plurality of different heating zones in a pedestal, causing current to be received from the plurality of different heating zones through a return lead that is shared by the plurality of power leads, and causing a polarity of the voltage provided to the plurality of power leads to switch. The switching frequency may be configured such that a DC chucking operation can be active at the same time to hold a substrate to the pedestal. Duty cycling the heating zones that share the return lead may minimize the current through the shared return lead.

公开(公告)号：US20240043994A1

公开(公告)日：2024-02-08

申请号：US17883368

申请日：2022-08-08

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj Benjamin Raj ,  Liliya I. Krivulina ,  Bharath Kumar Hanchanoor Rathnakara Gowda ,  Collen Leng ,  Syed A. Alam ,  Uwe P. Haller ,  Robert Casanova ,  Ryan Thomas Downey ,  Peter Standish

IPC: C23C16/44 ,  H01L21/67

CPC classification number: C23C16/4412 ,  H01L21/67248 ,  H01L21/67253

Abstract: Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

公开(公告)号：US11024522B2

公开(公告)日：2021-06-01

申请号：US16383881

申请日：2019-04-15

Applicant: Applied Materials, Inc.

Inventor： Hemant Mungekar ,  Uwe P. Haller ,  Ganesh Balasubramanian

IPC: H01L21/66 ,  H01L21/67 ,  G06N20/00 ,  G05B19/4155

Abstract: The present disclosure relate to methods and apparatus for temperature sensing and control during substrate processing. Substrate temperatures during processing, which are difficult to measure directly, may be determined by examination of deposited film properties or by measuring changes in power output over time of the substrate heating apparatus. Temperatures are determined for many substrates during processing, showing how substrate temperatures change over time, and the temperature changes are then used to build models via machine learning techniques. The models are used to adjust heating apparatus setpoints for future processing operations.