公开(公告)号：US20250126765A1

公开(公告)日：2025-04-17

申请号：US18486632

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Vellaichamy Nagappan ,  Viren Kalsekar ,  Vinay K. Prabhakar ,  Siva Chandrasekar ,  Satish Radhakrishnan ,  Rajath Kumar Lakkenahalli Hiriyannaiah ,  Dharma Ratnam Srichurnam ,  Sumit Subhash Singh

IPC: H05K9/00 ,  H01L21/67

Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support assembly disposed within the chamber body. The chambers may include a substrate support assembly having a support plate seated atop a support stem. The chambers may include a radio frequency (RF) shield seated atop the chamber body and extending about a peripheral edge of the support plate. The RF shield may include a lower annular member. The RF shield may include an upper annular member seated atop the lower annular member. The upper annular member may define a lip that protrudes radially outward from an outer surface of the upper annular member. Each of the lower annular member and the upper annular member may include a dielectric material.

公开(公告)号：US20240186121A1

公开(公告)日：2024-06-06

申请号：US18076234

申请日：2022-12-06

Applicant: Applied Materials, Inc.

Inventor： Vellaichamy Nagappan ,  Viren Kalsekar ,  Jeongmin Lee ,  Vinay K. Prabhakar ,  Pratap Chandran ,  Dharma Ratnam Srichurnam ,  Azhar Khan ,  Sumit Subhash Singh ,  Siva Chandrasekar ,  Satish Radhakrishnan

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32633 ,  H01J37/32724 ,  H01L21/68785

Abstract: Exemplary choke plates for use in a substrate processing system may include a plate defining a first aperture through the plate and a second aperture through the plate. The second aperture may be laterally offset from the first aperture. The plate may include a flange that defines a purging inlet. The plate may include a rim defining a plurality of purging outlets that are fluidly coupled with the purging inlet. Each of the plurality of purging outlets may be fluidly coupled with the first aperture.

公开(公告)号：US11682544B2

公开(公告)日：2023-06-20

申请号：US17076639

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Satish Radhakrishnan ,  Diwakar Kedlaya ,  Fang Ruan ,  Amit Bansal

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01J37/32715

Abstract: Semiconductor processing systems according to embodiments of the present technology may include a chamber body having sidewalls and a base. The chamber body may define an internal volume. The systems may include a substrate support assembly having a shaft and a platen coupled with the shaft along a first surface of the platen. The semiconductor processing systems may include a cover plate positioned on the platen of the substrate support assembly along a second surface of the platen opposite the first surface. The cover plate may include a flange extending about an exterior region of the cover plate. The flange may be in direct contact with the platen. The cover plate may include an upper wall vertically offset from the flange. An interior volume may be defined between the upper wall and the platen of the substrate support assembly.

公开(公告)号：US20230069317A1

公开(公告)日：2023-03-02

申请号：US17411926

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Siva Chandrasekar ,  Satish Radhakrishnan ,  Viren Kalsekar ,  Vellaichamy Nagappan ,  Vinay K. Prabhakar

IPC: H01L21/67 ,  H01J37/32

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures and a second plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the first plurality of apertures. Each lid stack may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures. The choke plate may define protrusions extending from each of a top and bottom surface of the choke plate that are arranged substantially symmetrically about the first aperture.

公开(公告)号：US11515176B2

公开(公告)日：2022-11-29

申请号：US16847955

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Siva Chandrasekar ,  Satish Radhakrishnan ,  Rajath Kumar Lakkenahalli Hiriyannaiah ,  Viren Kalsekar ,  Vinay Prabhakar

IPC: H01L21/67

Abstract: Exemplary substrate processing systems may include chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures through the lid plate and a second plurality of apertures through the lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the first plurality of apertures defined through the lid plate. Each lid stack of the plurality of lid stacks may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures.

公开(公告)号：US20220367236A1

公开(公告)日：2022-11-17

申请号：US17497881

申请日：2021-10-08

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Yongjing Lin ,  Satish Radhakrishnan ,  Haoyan Sha ,  Shih Chung Chen ,  Mario D. Silvetti ,  Mandyam Sriram ,  Vijay D. Parkhe

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46

Abstract: Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.

公开(公告)号：US20210320027A1

公开(公告)日：2021-10-14

申请号：US16844764

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Rui Cheng ,  Diwakar Kedlaya ,  Satish Radhakrishnan ,  Anton V. Baryshnikov ,  Venkatanarayana Shankaramurthy ,  Karthik Janakiraman ,  Paul L. Brillhart ,  Badri N. Ramamurthi

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.

公开(公告)号：US20210202218A1

公开(公告)日：2021-07-01

申请号：US16728552

申请日：2019-12-27

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Satish Radhakrishnan ,  Xiaoquan Min ,  Sarah Michelle Bobek ,  Sungwon Ha ,  Prashant Kumar Kulshreshtha ,  Vinay Prabhakar

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/50 ,  C23C16/26

Abstract: Exemplary semiconductor processing chambers may include a chamber body including sidewalls and a base. The chambers may include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate. The substrate support may include a shaft coupled with the support platen. The substrate support may include a shield coupled with the shaft of the substrate support. The shield may include a plurality of apertures defined through the shield. The substrate support may include a block seated in an aperture of the shield.

公开(公告)号：US20210166921A1

公开(公告)日：2021-06-03

申请号：US16701986

申请日：2019-12-03

Applicant: Applied Materials, Inc.

Inventor： Elizabeth Neville ,  Satish Radhakrishnan ,  Kartik Shah ,  Vinay Prabhakar ,  Venkata Sharat Chandra Parimi ,  Sungwon Ha

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.