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公开(公告)号：US20160282711A1
公开(公告)日：2016-09-29
申请号：US15179030
申请日：2016-06-10
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tatsuo ASAKAWA , Osamu MARUYAMA , Tsutomu SHOKI
IPC: G03F1/24
Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.
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公开(公告)号：US20140230848A1
公开(公告)日：2014-08-21
申请号：US14261005
申请日：2014-04-24
Applicant: OSAKA UNIVERSITY , HOYA CORPORATION
Inventor： Kazuto YAMAUCHI , Tsutomu SHOKI , Takeyuki YAMADA
IPC: H01L21/02
CPC classification number: H01L21/02052 , B08B3/02 , B24C1/04 , B24C7/0007 , G03F1/82 , H01L21/67051 , H01L21/67057
Abstract: The present invention is a method of cleaning a substrate, comprising cleaning at least one surface of a substrate located in a liquid by injecting pressurized cleaning liquid containing bubbles or cleaning particles from a injection nozzle to at least one surface of the substrate.
Abstract translation: 本发明是一种清洗基材的方法，包括通过将含有气泡或清洁颗粒的加压清洗液从注射喷嘴注入基材的至少一个表面来清洗位于液体中的基材的至少一个表面。
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公开(公告)号：US20240393675A1
公开(公告)日：2024-11-28
申请号：US18797169
申请日：2024-08-07
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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24.发明公开公开(公告)号：US20230266658A1
公开(公告)日：2023-08-24
申请号：US18142223
申请日：2023-05-02
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tsutomu SHOKI
CPC classification number: G03F1/24 , G03F1/42 , G03F7/2004
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US20220206379A1
公开(公告)日：2022-06-30
申请号：US17603529
申请日：2020-06-18
Applicant: HOYA CORPORATION
Inventor： Masanori NAKAGAWA , Tsutomu SHOKI
IPC: G03F1/24
Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas.
A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.-
Patent Agency Ranking
公开(公告)号：US20210294202A1
公开(公告)日：2021-09-23
申请号：US17325627
申请日：2021-05-20
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Takahiro ONOUE
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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27.发明申请公开(公告)号：US20190265585A1
公开(公告)日：2019-08-29
申请号：US16343505
申请日：2017-10-18
Applicant: HOYA CORPORATION
Inventor： Yohei IKEBE , Tsutomu SHOKI
IPC: G03F1/24 , G03F7/20 , G03F1/38 , G03F1/54 , H01L21/033
Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
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公开(公告)号：US20190079382A1
公开(公告)日：2019-03-14
申请号：US16084332
申请日：2017-03-21
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Takahiro ONOUE
Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
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公开(公告)号：US20180275507A1
公开(公告)日：2018-09-27
申请号：US15980783
申请日：2018-05-16
Applicant: HOYA CORPORATION
Inventor： Toshihiko ORIHARA , Kazuhiro HAMAMOTO , Hirofumi KOZAKAI , Youichi USUI , Tsutomu SHOKI , Junichi HORIKAWA
IPC: G03F1/48 , H01L21/308 , G03F1/22 , G02B5/08 , G03F7/20 , B82Y10/00 , B82Y40/00 , G03F7/16 , C03C17/36 , C03C23/00 , C03C3/06 , C03C17/34
CPC classification number: G03F1/48 , B82Y10/00 , B82Y40/00 , C03C3/06 , C03C17/3435 , C03C17/3626 , C03C17/3636 , C03C17/3639 , C03C17/3649 , C03C17/3665 , C03C23/0075 , C03C2201/42 , C03C2218/33 , G02B5/08 , G02B5/0816 , G02B5/0891 , G03F1/22 , G03F7/16 , G03F7/2002 , G03F7/2004 , G03F7/70733 , H01L21/3081 , H01L21/3085
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
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公开(公告)号：US20170131629A1
公开(公告)日：2017-05-11
申请号：US15417846
申请日：2017-01-27
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Toshihiko ORIHARA , Tsutomu SHOKI , Junichi HORIKAWA
Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.
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