公开(公告)号：US20210389674A1

公开(公告)日：2021-12-16

申请号：US17461199

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Wei Wang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/32 ,  H01L21/027 ,  H01L21/02 ,  G03F7/11

Abstract: The present disclosure provides resist rinse solutions and corresponding lithography techniques that achieve high pattern structural integrity for advanced technology nodes. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.

公开(公告)号：US11158509B2

公开(公告)日：2021-10-26

申请号：US16877755

申请日：2020-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Tien Shen ,  Chi-Cheng Hung ,  Chin-Hsiang Lin ,  Chien-Wei Wang ,  Ching-Yu Chang ,  Chih-Yuan Ting ,  Kuei-Shun Chen ,  Ru-Gun Liu ,  Wei-Liang Lin ,  Ya Hui Chang ,  Yuan-Hsiang Lung ,  Yen-Ming Chen ,  Yung-Sung Yen

IPC: H01L21/265 ,  H01L21/311 ,  H01L21/033

Abstract: A method for semiconductor manufacturing includes providing a substrate, forming a patterning layer over the substrate, and patterning the patterning layer to form a hole in the patterning layer. The method also includes applying a first directional etching to two inner sidewalls of the hole to expand the hole along a first direction and applying a second directional etching to another two inner sidewalls of the hole to expand the hole along a second direction that is different from the first direction.

公开(公告)号：US20210325782A1

公开(公告)日：2021-10-21

申请号：US17364020

申请日：2021-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US11137685B2

公开(公告)日：2021-10-05

申请号：US16858846

申请日：2020-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  H01L21/67 ,  G03F7/039 ,  G03F7/38 ,  G03F7/40

Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.

公开(公告)号：US11127592B2

公开(公告)日：2021-09-21

申请号：US15994091

申请日：2018-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ching Chang ,  Ching-Yu Chang ,  Chin-Hsiang Lin ,  Yen-Hao Chen

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00 ,  G03F7/095 ,  G03F7/16 ,  B05D1/00

Abstract: A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.

公开(公告)号：US11054742B2

公开(公告)日：2021-07-06

申请号：US16009795

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US11029602B2

公开(公告)日：2021-06-08

申请号：US15994615

申请日：2018-05-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Yahru Cheng

IPC: G03F7/11 ,  G03F7/38 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the photoresist layer to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having fluorocarbon pendant groups.

公开(公告)号：US11003084B2

公开(公告)日：2021-05-11

申请号：US16150789

申请日：2018-10-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Li-Yen Lin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/16 ,  H01L21/311 ,  H01L21/033 ,  G03F7/09 ,  G03F7/039 ,  H01L21/027 ,  G03F7/004

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The method includes exposing a portion of the resist layer by performing an exposure process. The resist layer includes a compound, and the compound has a carbon backbone, and a photoacid generator (PAG) group and/or a quencher group are bonded to the carbon backbone. The method also includes performing a baking process on the resist layer and etching a portion of the resist layer to form a patterned resist layer. The method includes patterning the material layer by using the patterned resist layer as a mask and removing the patterned resist layer.

公开(公告)号：US20210041784A1

公开(公告)日：2021-02-11

申请号：US16704169

申请日：2019-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chih Chen ,  Ching-Yu Chang

IPC: G03F7/09 ,  G03F7/11 ,  G03F7/039 ,  G03F7/038 ,  C09D5/00 ,  C09D165/00 ,  G03F7/16 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20

Abstract: A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.

公开(公告)号：US10915027B2

公开(公告)日：2021-02-09

申请号：US16048455

申请日：2018-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang

IPC: G03F7/40 ,  G03F7/30 ,  G03F7/00

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.