METHOD AND APPARATUS FOR FORMING CARBON NANOTUBE ARRAY
    26.
    发明申请
    METHOD AND APPARATUS FOR FORMING CARBON NANOTUBE ARRAY 有权
    制备碳纳米管阵列的方法和装置

    公开(公告)号:US20110142745A1

    公开(公告)日:2011-06-16

    申请号:US12855883

    申请日:2010-08-13

    Inventor: CHEN FENG LIANG LIU

    Abstract: The present disclosure relates to a method for forming a carbon nanotube array. In the method a tubular substrate is provided. The tubular substrate includes an outer sidewall with a catalyst layer located on the outer sidewall. The heating member, and the tubular substrate with the catalyst layer is received in a reacting chamber. The tubular substrate is heated by the heating member. A carbon source gas is supplied into the reacting chamber to grow the carbon nanotube array on the tubular substrate.

    Abstract translation: 本发明涉及形成碳纳米管阵列的方法。 在该方法中,提供管状基底。 管状衬底包括具有位于外侧壁上的催化剂层的外侧壁。 加热部件和具有催化剂层的管状基板被接收在反应室中。 管状基板被加热构件加热。 将碳源气体供应到反应室中以使管状基板上的碳纳米管阵列生长。

    Apparatus for manufacturing carbon nanotubes
    30.
    发明授权
    Apparatus for manufacturing carbon nanotubes 有权
    碳纳米管制造装置

    公开(公告)号:US07572413B2

    公开(公告)日:2009-08-11

    申请号:US11309321

    申请日:2006-07-26

    Abstract: An apparatus for manufacturing carbon nanotubes is provided. The apparatus includes: a reaction chamber having an inlet and a outlet; a heater for elevating an interior temperature of the reaction chamber; and a gas guiding member coupled to the inlet and configured for introducing a carbon-containing gas into the reaction chamber, the gas guiding member including a gas-exiting portion arranged in the reaction chamber, the gas-exiting portion having a cavity defined therein and a flat perforated top wall, the perforated top wall being configured for supporting a substrate thereon and defining a route allowing the introduced carbon-containing gas to flow in a direction substantially perpendicular to a main plane of the substrate.

    Abstract translation: 提供一种制造碳纳米管的装置。 该装置包括:具有入口和出口的反应室; 用于升高反应室内部温度的加热器; 以及气体引导构件,其联接到所述入口并且构造成用于将含碳气体引入所述反应室中,所述气体引导构件包括布置在所述反应室中的气体排出部分,所述气体排出部分具有限定在其中的空腔, 穿孔顶壁被构造成用于在其上支撑基底并且限定允许引入的含碳气体沿基本上垂直于基底的主平面的方向流动的路线。

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