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    Method of providing a MEMS device comprising a pyramidal protrusion, and a mold
    23.
    发明授权
    Method of providing a MEMS device comprising a pyramidal protrusion, and a mold 有权

    公开(公告)号：US12013415B2

    公开(公告)日：2024-06-18

    申请号：US17603226

    申请日：2020-04-07

    Applicant: SMARTTIP BV

    Inventor： Edin Sarajlic

    IPC: G01Q70/16 ,  G01Q70/10

    CPC classification number: G01Q70/10 ,  G01Q70/16 ,  B81B2201/12

    Abstract: A method of providing a MEMS device, such as an AFM probe, having a three-sided pyramidal protrusion is made using a multitude of MEMS method steps. To allow the reliable and speedy manufacture of such a MEMS device having a three-sided protrusion on a massive scale, wherein the protrusion has a relatively small half-cone angle and a single apex, a mold is used. The mold includes a sacrificial layer on top of a base substrate. The method of providing the MEMS device includes:



    providing an area at the first side of the mold which area comprises a pit with a layer of protrusion material,
    patterning the layer of protrusion material to the desired shape, and
    isotropically etching the sacrificial layer of the mold with an isotropic etchant capable of etching the sacrificial layer so as to separate the MEMS device from at least the base substrate of the mold.

    PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL INTERACTION SYSTEM FOR A STORAGE MEDIUM
    26.
    发明申请
    PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL INTERACTION SYSTEM FOR A STORAGE MEDIUM 审中-公开
    用于制造存储介质的微电子交互系统的方法

    公开(公告)号：US20160332871A1

    公开(公告)日：2016-11-17

    申请号：US15220267

    申请日：2016-07-26

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

    IPC: B81C1/00

    CPC classification number: B81C1/00539 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/019 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2203/0714 ,  H01L27/10

    Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

    Abstract translation: 一种用于制造用于存储介质的微机电类型的相互作用系统的方法，具有支撑元件的相互作用系统和由支撑元件承载的相互作用元件，其设想是提供具有基板的半导体材料晶片，其具有 第一类导电性和顶面; 在所述顶表面附近的所述衬底的表面部分中形成具有与所述第一类型导电性相反的第二导电类型的第一相互作用区域; 并且从顶表面开始进行基板的电化学蚀刻，蚀刻相对于第二类型的导电性是选择性的，以便去除基板的表面部分并将第一相互作用区域与基板分离，从而形成 支撑元件。

    Ultra-sharp nanoprobes and methods
    28.
    发明授权
    Ultra-sharp nanoprobes and methods 有权
    超尖锐纳米探针和方法

    公开(公告)号：US09329203B1

    公开(公告)日：2016-05-03

    申请号：US14697129

    申请日：2015-04-27

    Applicant: Joanna Ptasinski ,  Stephen D. Russell

    Inventor： Joanna Ptasinski ,  Stephen D. Russell

    IPC: G01Q60/38 ,  B82Y15/00

    CPC classification number: G01Q60/38 ,  B81B2201/12 ,  B81C1/00111 ,  B82Y15/00

    Abstract: Methods for fabricating ultra-sharp nanoprobes can include the steps of providing a wafer, and patterning a silicon layer on the wafer with a plurality of geometric structures. The geometric structures can be patterned using electron-beam lithography or photolithography, and can have circular, triangular or other geometric shapes when viewed in top plan. The methods can further include the step of depositing a non-uniform cladding on the geometric structures using plasma enhanced chemical vapor deposition (PECVD) techniques, and then wet-etching the wafer. The non-uniform nature of the cladding can result in more complete etching in the areas where the cladding has lower density and incomplete etching in the areas of higher density of the non-uniform cladding. The different etching rates in the proximity of at least adjacent two geometric structures can result in the formation of ultra-sharp nanoprobes.

    Abstract translation: 制造超尖锐纳米探针的方法可以包括以下步骤：提供晶片，并且利用多个几何结构在晶片上图案化硅层。 可以使用电子束光刻或光刻来图案化几何结构，并且可以在俯视图中观察时具有圆形，三角形或其他几何形状。 所述方法还可以包括使用等离子体增强化学气相沉积（PECVD）技术在几何结构上沉积不均匀包层的步骤，然后湿式蚀刻晶片。 在不均匀包层的较高密度区域中，包层的不均匀性质可导致在包层具有较低密度和不完全蚀刻的区域中的更完整的蚀刻。 在至少相邻的两个几何结构附近的不同蚀刻速率可导致形成超尖锐的纳米探针。

    Nanotweezers and nanomanipulator
    29.
    发明授权
    Nanotweezers and nanomanipulator 失效
    纳米技术人员和纳米机器人

    公开(公告)号：US06805390B2

    公开(公告)日：2004-10-19

    申请号：US10406844

    申请日：2003-04-04

    Applicant: Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

    Inventor： Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

    IPC: B25J1512

    CPC classification number: B25J7/00 ,  B81B2201/032 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/002 ,  B82B3/00 ,  G01Q80/00 ,  Y10S977/732 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/837 ,  Y10S977/842 ,  Y10S977/858 ,  Y10S977/863 ,  Y10S977/875 ,  Y10S977/876 ,  Y10S977/89 ,  Y10S977/901 ,  Y10S977/962

    Abstract: To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances.

    Abstract translation: 提供纳米扫描器和纳米管操纵器，其允许部件的极小化，并且能够夹持各种类型的纳米物质，例如绝缘体，半导体和导体，并且夹持各种形状的纳米物质。静电纳米尺寸器2的特征在于纳米晶体管 2由多个纳米管构成，其基端部固定在支架6上，使得纳米管从支架6突出，绝缘并覆盖纳米管的表面的涂膜和与导线10,10连接的导线10,10 两个纳米管8,9; 并且通过在这些引线上施加电压而产生的静电吸引力自由地打开和闭合两个纳米管的末端。 此外，通过在纳米管9的表面上形成压电膜32，通过使压电膜膨胀收缩来使纳米管的前端自由地开闭，从而使任何所需的纳米物质 无论纳米物质是绝缘体，半导体还是导体，都要进行处理。 此外，如果通过设计三个纳米管以通过静电系统自由地打开和关闭，则可以处理诸如球形，棒状等各种形状的纳米物质。 此外，通过将纳米技术人员与三维驱动机构组合而构成的纳米机械手有利于纳米物质的夹持，移动和释放。

    Nanotweezers and nanomanipulator
    30.
    发明授权
    Nanotweezers and nanomanipulator 失效

    公开(公告)号：US06802549B2

    公开(公告)日：2004-10-12

    申请号：US10406845

    申请日：2003-04-04

    Applicant: Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

    Inventor： Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

    IPC: B25J1512

    CPC classification number: B25J7/00 ,  B81B2201/032 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/002 ,  B82B3/00 ,  G01Q80/00 ,  Y10S977/732 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/837 ,  Y10S977/842 ,  Y10S977/858 ,  Y10S977/863 ,  Y10S977/875 ,  Y10S977/876 ,  Y10S977/89 ,  Y10S977/901 ,  Y10S977/962

    Abstract: To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances.

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