公开(公告)号：US20050247989A1

公开(公告)日：2005-11-10

申请号：US11182906

申请日：2005-07-18

Applicant: Yu-Chong Tai ,  Qing He

Inventor： Yu-Chong Tai ,  Qing He

IPC: B01L3/00 ,  B81B3/00 ,  B81B7/00 ,  G01N30/56 ,  G01N30/60 ,  H01L29/82

CPC classification number: B81C1/00333 ,  B01L3/502707 ,  B01L2200/0668 ,  B01L2200/12 ,  B01L2300/0896 ,  B81C1/00182 ,  B81C1/00476 ,  B81C2201/0108 ,  B82Y30/00 ,  G01N30/6095 ,  G01N2030/562 ,  G01N2030/6056

Abstract: MEMs devices are integrally fabricated with included micro or nanoparticles by providing a mixture of a sacrificial material and a multiplicity of particles, disposing the mixture onto a substrate, fabricating a MEMs structure on the substrate including at least part of the mixture, so that at least some of the mixture is enclosed in the MEMs structure, removing the sacrificial material, and leaving at least some of the multiplicity of particles substantially free and enclosed in the MEMs structure. The step of fabricating a MEMs structure is quite general and is contemplated as including one or a multiplicity of additional steps for creating some type of structure in which the particles, which may be microbeads or nanobeads, are included. A wide variety of useful applications for MEMs integrated with micro or nanoparticles are available.

Abstract translation: 通过提供牺牲材料和多个颗粒的混合物将MEM装置与包含的微型或纳米颗粒整体制造，将混合物设置在衬底上，在包括至少部分混合物的衬底上制造MEM结构，使得至少 一些混合物被包封在MEMs结构中，去除牺牲材料，并且使至少一些多个颗粒基本上自由并且封闭在MEM结构中。 制造MEMs结构的步骤是相当普遍的，并且被设想为包括用于产生某些类型的结构的一个或多个附加步骤，其中可以包括可以是微珠或纳米珠的颗粒。 可以使用与微型或纳米颗粒集成的MEM的各种有用的应用。

公开(公告)号：US06876047B2

公开(公告)日：2005-04-05

申请号：US10290779

申请日：2002-11-08

Applicant: Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  Svetlana Tatic-Lucic

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  Svetlana Tatic-Lucic

IPC: B81B3/00 ,  B81B7/00 ,  H01H1/04 ,  H01H1/50 ,  H01H59/00 ,  H01H61/04 ,  H01L21/302 ,  H01L23/373 ,  H01L23/522 ,  H01L27/12 ,  H01L29/86 ,  H02N1/00 ,  H02N10/00 ,  H01L29/84

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device Having A Trilayered Beam And Related Methods. According to one embodiment, a movable, trilayered microcomponent suspended over a substrate is provided and includes a first electrically conductive layer patterned to define a movable electrode. The first metal layer is separated from the substrate by a gap. The microcomponent further includes a dielectric layer formed on the first metal layer and having an end fixed with respect to the substrate. Furthermore, the microcomponent includes a second electrically conductive layer formed on the dielectric layer and patterned to define an electrode interconnect for electrically communicating with the movable electrode.

Abstract translation: 具有三层梁的MEMS器件及相关方法。 根据一个实施例，提供了悬挂在基板上的可移动的三层微型部件，并且包括图案化以限定可移动电极的第一导电层。 第一金属层通过间隙与基板分离。 微组件还包括形成在第一金属层上并具有相对于衬底固定的端部的电介质层。 此外，微组件包括形成在电介质层上并被图案化以限定用于与可动电极电连通的电极互连的第二导电层。

公开(公告)号：US06847114B2

公开(公告)日：2005-01-25

申请号：US10291146

申请日：2002-11-08

Applicant: Subham Sett ,  Shawn Jay Cunningham

Inventor： Subham Sett ,  Shawn Jay Cunningham

IPC: B81B3/00 ,  B81B7/00 ,  H01H1/04 ,  H01H1/50 ,  H01H59/00 ,  H01H61/04 ,  H01L21/302 ,  H01L23/373 ,  H01L23/522 ,  H01L27/12 ,  H01L29/86 ,  H02N1/00 ,  H02N10/00 ,  H01L23/34 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01R43/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A micro-scale interconnect device with internal heat spreader and method for fabricating same. The device includes first and second arrays of generally coplanar electrical communication lines. The first array is disposed generally along a first plane, and the second array is disposed generally along a second plane spaced from the first plane. The arrays are electrically isolated from each other. Embedded within the interconnect device is a heat spreader element. The heat spreader element comprises a dielectric material disposed in thermal contact with at least one of the arrays, and a layer of thermally conductive material embedded in the dielectric material. The device is fabricated by forming layers of electrically conductive, dielectric, and thermally conductive materials on a substrate. The layers are arranged to enable heat energy given off by current-carrying communication lines to be transferred away from the communication lines.

Abstract translation: 具有内部散热器的微尺寸互连装置及其制造方法。 该装置包括大致共面电通信线路的第一和第二阵列。 第一阵列大致沿着第一平面布置，并且第二阵列通常沿着与第一平面间隔开的第二平面设置。 阵列彼此电隔离。 嵌入在互连装置内的是散热器元件。 散热器元件包括设置成与阵列中的至少一个热接触的电介质材料，以及嵌入电介质材料中的导热材料层。 该器件通过在衬底上形成导电的，介电的和导热的材料层来制造。 这些层被布置成使得通过载流通信线路发出的热能被远离通信线路。

公开(公告)号：US20040197960A1

公开(公告)日：2004-10-07

申请号：US10831012

申请日：2004-04-22

Inventor： Subham Sett ,  Shawn Jay Cunningham

IPC: H01L021/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A micro-scale interconnect device with internal heat spreader and method for fabricating same. The device includes first and second arrays of generally coplanar electrical communication lines. The first array is disposed generally along a first plane, and the second array is disposed generally along a second plane spaced from the first plane. The arrays are electrically isolated from each other. Embedded within the interconnect device is a heat spreader element. The heat spreader element comprises a dielectric material disposed in thermal contact with at least one of the arrays, and a layer of thermally conductive material embedded in the dielectric material. The device is fabricated by forming layers of electrically conductive, dielectric, and thermally conductive materials on a substrate. The layers are arranged to enable heat energy given off by current-carrying communication lines to be transferred away from the communication lines.

Abstract translation: 具有内部散热器的微尺寸互连装置及其制造方法。 该装置包括大致共面电通信线路的第一和第二阵列。 第一阵列大致沿着第一平面布置，并且第二阵列通常沿着与第一平面间隔开的第二平面设置。 阵列彼此电隔离。 嵌入在互连装置内的是散热器元件。 散热器元件包括设置成与阵列中的至少一个热接触的电介质材料，以及嵌入电介质材料中的导热材料层。 该器件通过在衬底上形成导电的，介电的和导热的材料层来制造。 这些层被布置成使得通过载流通信线路发出的热能被远离通信线路。

公开(公告)号：US06777629B2

公开(公告)日：2004-08-17

申请号：US10156780

申请日：2002-05-08

Applicant: Spencer A. Lane ,  Krishna Jonnalagadda ,  Manes Eliacin

Inventor： Spencer A. Lane ,  Krishna Jonnalagadda ,  Manes Eliacin

IPC: B81B702

CPC classification number: B81C1/00182 ,  B81B2201/045 ,  B81B2203/0315 ,  B81C2201/0108 ,  B81C2203/0136 ,  H01H59/0009 ,  H01H2001/0073

Abstract: A meso-scale MEMS device having a movable member (51) is formed using standard printed wiring board and high density interconnect technologies and practices. In one embodiment, sacrificial material disposed about the movable member (51) is removed through openings (101, 102) as formed through a cover (91) to form a cavity (121) that retains and limits the freedom of movement of the movable member (51). The movable member can support a reflective surface (224) to thereby provide a mechanism that will support a projection display and/or image scanner (such as a bar code scanner).

Abstract translation: 使用标准印刷线路板和高密度互连技术和实践形成具有可移动部件（51）的中尺度MEMS器件。 在一个实施例中，围绕可移动构件（51）设置的牺牲材料通过通过盖（91）形成的开口（101,102）去除以形成空腔（121），其保持并限制可移动构件 （51）。 可移动构件可以支撑反射表面（224），从而提供将支撑投影显示和/或图像扫描器（例如条形码扫描器）的机构。

公开(公告)号：US20030119221A1

公开(公告)日：2003-06-26

申请号：US10290920

申请日：2002-11-08

Applicant: Coventor, Inc.

Inventor： Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

IPC: H01L021/00 ,  H01L029/82

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

公开(公告)号：US20030116848A1

公开(公告)日：2003-06-26

申请号：US10290779

申请日：2002-11-08

Applicant: Coventor, Inc.

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  Svetlana Tatic-Lucic

IPC: H01L023/48

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device Having A Trilayered Beam And Related Methods. According to one embodiment, a movable, trilayered microcomponent suspended over a substrate is provided and includes a first electrically conductive layer patterned to define a movable electrode. The first metal layer is separated from the substrate by a gap. The microcomponent further includes a dielectric layer formed on the first metal layer and having an end fixed with respect to the substrate. Furthermore, the microcomponent includes a second electrically conductive layer formed on the dielectric layer and patterned to define an electrode interconnect for electrically communicating with the movable electrode.

Abstract translation: 具有三层梁的MEMS器件及相关方法。 根据一个实施例，提供了悬挂在基板上的可移动的三层微型部件，并且包括图案化以限定可移动电极的第一导电层。 第一金属层通过间隙与基板分离。 微组件还包括形成在第一金属层上并具有相对于衬底固定的端部的电介质层。 此外，微组件包括形成在电介质层上并被图案化以限定用于与可动电极电连通的电极互连的第二导电层。

公开(公告)号：US20030047533A1

公开(公告)日：2003-03-13

申请号：US10167272

申请日：2002-06-10

Applicant: REFLECTIVITY, INC., a California corporation

Inventor： Jason S. Reid ,  Nungavaram S. Viswanathan

IPC: C23F001/00 ,  C23C016/00

CPC classification number: B81C1/00476 ,  B81B2201/045 ,  B81C2201/0108 ,  B81C2201/112 ,  B81C2201/117 ,  B82Y30/00

Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

Abstract translation: 一种方法包括在衬底上沉积有机材料; 在沉积有机材料之后沉积与有机材料不同的附加材料; 并用压缩流体除去有机材料。 还公开了一种方法，包括：在衬底上提供有机层; 在提供有机层之后，提供与有机层的有机材料不同的一层或多层材料; 用压缩流体去除有机层; 并且在去除有机层之后向剩余的材料提供具有压缩流体的抗静电剂。

公开(公告)号：US06198159B1

公开(公告)日：2001-03-06

申请号：US09042697

申请日：1998-03-17

Applicant: Toshinori Hosoma ,  Kazuhiko Yosioka ,  Shouzou Katsuki

Inventor： Toshinori Hosoma ,  Kazuhiko Yosioka ,  Shouzou Katsuki

IPC: H01L2358

CPC classification number: B81C1/00357 ,  B32B15/08 ,  B81B2201/0264 ,  B81C2201/0108 ,  B81C2201/019 ,  H01L21/2007 ,  H01L21/76251

Abstract: A bonded wafer in which silicon wafers and an amorphous heat fusion bonding polyimide are used, a process for producing the same, and a substrate which is prepared by variously processing the bonded wafer.

Abstract translation: 使用硅晶片和无定形热熔融粘合聚酰亚胺的接合晶片，其制造方法和通过对接合晶片进行各种处理而制备的基板。

公开(公告)号：US6159385A

公开(公告)日：2000-12-12

申请号：US75008

申请日：1998-05-08

Applicant: Jun J. Yao ,  Robert J. Anderson

Inventor： Jun J. Yao ,  Robert J. Anderson

IPC: B81C1/00 ,  B81B3/00 ,  H01L27/12 ,  H01P11/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  H01L21/00

CPC classification number: B81C1/00484 ,  B81B2203/0118 ,  B81C2201/0108 ,  B81C2201/014 ,  B81C2201/019

Abstract: The present invention relates to a fabrication process relating to a fabrication process for manufacture of micro-electromechanical (MEM) devices such as cantilever supported beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate as the carrier substrate and single crystal silicon as the MEM component material. The process further includes deposition of an optional layer of insulating material such as silicon dioxide on top of a layer of doped silicon grown on a silicon substrate. The silicon dioxide is epoxy bonded to the glass substrate to create a silicon--silicon dioxide-epoxy-glass structure. The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer and an oxygen plasma etch is performed to undercut the epoxy film and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material in selected areas mechanically supports the MEM component.