公开(公告)号：US20080099338A1

公开(公告)日：2008-05-01

申请号：US11927327

申请日：2007-10-29

Applicant: Adam Cohen

Inventor： Adam Cohen

IPC: C25D5/02

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

公开(公告)号：US07163614B2

公开(公告)日：2007-01-16

申请号：US10272255

申请日：2002-10-15

Applicant: Adam L. Cohen

Inventor： Adam L. Cohen

IPC: C25D5/02 ,  C25D5/00

CPC classification number: B81C1/0038 ,  B33Y10/00 ,  B81C1/00619 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D7/12 ,  C25D17/02 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/76885 ,  H05K3/241

Abstract: Various embodiments of the invention provide techniques for forming structures (e.g. HARMS-type structures) via an electrochemical extrusion process. Preferred embodiments perform the extrusion processes via depositions through anodeless conformable contact masks that are initially pressed against substrates that are then progressively pulled away or separated as the depositions thicken. A pattern of deposition may vary over the course of deposition by including more complex relative motion between the mask and the substrate elements. Such complex motion may include rotational components or translational motions having components that are not parallel to an axis of separation. More complex structures may be formed by combining the electrochemical extrusion process with the selective deposition, blanket deposition, planarization, etching, and multi-layer operations of a multi-layer electrochemical fabrication process.

Abstract translation: 本发明的各种实施例提供了通过电化学挤出方法形成结构（例如HARMS型结构）的技术。 优选的实施方案通过沉积通过无阳极适应的接触掩模进行挤出过程，其最初被压在基底上，然后随着沉积增厚逐渐拉开或分离。 沉积图案可以通过在掩模和衬底元件之间包括更复杂的相对运动而在沉积过程中变化。 这种复杂运动可以包括旋转分量或具有不与分离轴平行的分量的平移运动。 可以通过将电化学挤出工艺与多层电化学制造工艺的选择性沉积，覆盖沉积，平坦化，蚀刻和多层操作组合来形成更复杂的结构。

公开(公告)号：US20060019420A1

公开(公告)日：2006-01-26

申请号：US10895477

申请日：2004-07-21

Applicant: Hang Liao ,  Timothy Mellander ,  Mike Groh

Inventor： Hang Liao ,  Timothy Mellander ,  Mike Groh

IPC: H01L21/00 ,  H01L21/31

CPC classification number: B81C1/00801 ,  B81C2201/0197 ,  B81C2201/053 ,  B81C2201/056

Abstract: A method of depositing polymer thin films on a MEMS device having a wafer stack includes depositing one or more protection films on a polymer thin film layer on the wafer stack, fabricating the MEMS device, and removing the one or more protection films.

Abstract translation: 在具有晶片堆叠的MEMS器件上沉积聚合物薄膜的方法包括在晶片叠层上的聚合物薄膜层上沉积一个或多个保护膜，制造MEMS器件，以及去除一个或多个保护膜。

公开(公告)号：US20060011712A1

公开(公告)日：2006-01-19

申请号：US11160887

申请日：2005-07-14

Applicant: Stefano Oggioni

Inventor： Stefano Oggioni

IPC: B23K31/02 ,  B23K35/12

CPC classification number: H01L21/6835 ,  B23K3/0623 ,  B23K2101/40 ,  B81C1/0038 ,  B81C2201/0197 ,  B81C2203/035 ,  H01L24/11 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/11003 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H05K3/3478 ,  H05K2203/0113 ,  H05K2203/0338 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method is provided for forming alloy deposits at selected areas on a receiving substrate, including providing a decal alloy carrier, having alloy loadable areas in selected positions thereof, the alloy loadable areas being adapted to being loaded with an alloy mass, mating the decal alloy carrier with the receiving substrate, so that the alloy loadable areas substantially correspond to the selected areas on the receiving substrate, and reflowing the solder alloy masses so as to cause transfer of the alloy from the alloy loadable areas to selected areas on the receiving substrate, such as solder-affine pads, while ensuring that the decal alloy carrier and the receiving substrate are kept in close contact one to another at least during the reflowing. The alloy loadable areas are preferrably recesses in the decal alloy carrier having flat bottoms, which results in relaxed alignment tolerances.

Abstract translation: 提供了一种用于在接收基板上的选定区域形成合金沉积物的方法，包括提供具有在其选定位置的合金可加载区域的贴花合金载体，合金可装载区域适于装载合金块，将该贴花合金 载体与接收基板接合，使得合金可加载区域基本上对应于接收基板上的选定区域，并且回流焊料合金块，以使合金从合金可加载区域转移到接收基板上的选定区域， 例如焊锡焊盘，同时确保贴合合金载体和接收基板至少在回流期间彼此保持紧密接触。 合金可加载区域在具有平坦底部的贴花合金载体中优选为凹陷，这导致松弛的对准公差。

公开(公告)号：US20050142846A1

公开(公告)日：2005-06-30

申请号：US11029220

申请日：2005-01-03

Applicant: Uri Frodis ,  Adam Cohen ,  Michael Lockard

Inventor： Uri Frodis ,  Adam Cohen ,  Michael Lockard

IPC: B05D1/38 ,  C08K3/00 ,  C25D3/30 ,  C25D3/38 ,  C25D3/48 ,  C25D5/02 ,  C25D5/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/301 ,  H01L21/302 ,  H01L21/4763 ,  H01L21/768

CPC classification number: C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

Abstract translation: 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。

公开(公告)号：US20050136359A1

公开(公告)日：2005-06-23

申请号：US10742276

申请日：2003-12-19

Applicant: Michael Weisberg

Inventor： Michael Weisberg

IPC: B81C1/00 ,  G03F7/00

CPC classification number: G03F7/00 ,  B33Y10/00 ,  B81C1/00492 ,  B81C2201/0159 ,  B81C2201/0197 ,  G03F7/0035

Abstract: A method of creating a microelectromechanical systems (MEMS) device includes applying a layer of photoresist to a lower layer to create a multilayer MEMS device. The method includes transferring the layer of photoresist to the lower layer. The method can also include spincoating the photoresist onto a release layer, softbaking the spincoated photoresist to at least partially dry it, transferring the photoresist to form a layer of the multilayer MEMS device, and exposing the photoresist to light to crosslink it. The multilayer MEMS device includes a plurality of layers of photoresist.

Abstract translation: 创建微机电系统（MEMS）装置的方法包括将光致抗蚀剂层施加到下层以产生多层MEMS器件。 该方法包括将光致抗蚀剂层转移到下层。 该方法还可以包括将光致抗蚀剂旋涂到剥离层上，将旋涂的光致抗蚀剂软化至少部分地干燥，转移光致抗蚀剂以形成多层MEMS器件的层，并将光致抗蚀剂曝光以使其交联。 多层MEMS器件包括多层光致抗蚀剂。

公开(公告)号：US20040065553A1

公开(公告)日：2004-04-08

申请号：US10677549

申请日：2003-10-01

Applicant: University of Southern California

Inventor： Adam L. Cohen

IPC: C25D005/02

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

Abstract translation: 一种电镀方法，包括：a）使第一衬底与第一制品接触，所述第一制品包括衬底和以衬底形式设置的贴合掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基板上去除第一制品。 还公开了电镀制品和电镀装置。

公开(公告)号：US4665610A

公开(公告)日：1987-05-19

申请号：US725984

申请日：1985-04-22

Applicant: Phillip W. Barth

Inventor： Phillip W. Barth

IPC: B81B3/00 ,  G01L9/00 ,  H01G7/00

CPC classification number: B81C1/00158 ,  G01L9/0042 ,  G01L9/0073 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C2201/0197 ,  Y10S148/159

Abstract: A semiconductor pressure transducer includes a silicon substrate, a recessed portion in a major surface of the substrate, and a multiple level diaphragm overlying the recessed portion. A selectively etchable spacer material is employed when fabricating the diaphragm by forming successive layers of diaphragm material over the spacer material. Holes through the diaphragm are filled with the selectively etchable material thereby allowing the etching of the spacer material. Support posts can be provided in the recessed portion to help support the diaphragm.

Abstract translation: 半导体压力传感器包括硅衬底，衬底的主表面中的凹陷部分和覆盖凹部的多层膜片。 当通过在间隔材料上形成连续的隔膜材料层来制造隔膜时，采用选择性可蚀刻间隔物材料。 通过隔膜的孔填充有可选择的可蚀刻材料，从而允许蚀刻间隔物材料。 可以在凹部中提供支撑柱，以帮助支撑隔膜。

公开(公告)号：US09866971B2

公开(公告)日：2018-01-09

申请号：US15305089

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： Quanbo Zou ,  Zhe Wang ,  Jifang Tao ,  Guanxun Qiu

IPC: H04R25/00 ,  H04R19/02 ,  H04R7/06 ,  H04R31/00 ,  H04R19/01 ,  B81B7/00 ,  B81C1/00

CPC classification number: H04R19/02 ,  B81B7/008 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/0197 ,  H04R7/06 ,  H04R19/013 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/025 ,  H04R2307/027

Abstract: The present invention provides a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer; providing a sacrificial layer on the metal layer; providing a first thermal bimorph layer on the sacrificial layer; providing a second thermal bimorph layer on the first thermal bimorph layer; providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided; forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.

公开(公告)号：US20160154070A1

公开(公告)日：2016-06-02

申请号：US14512469

申请日：2014-10-13

Applicant: InSighTech, LLC

Inventor： Biao Zhang ,  Tao Ju

IPC: G01R33/09 ,  G01C19/5712

CPC classification number: G01P15/105 ,  B81B5/00 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/0197 ,  B81C2203/038 ,  G01C19/56 ,  G01C19/5712 ,  G01C19/5776 ,  G01P15/125 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098

Abstract: A MEMS gyroscope is disclosed herein, wherein the MEMS gyroscope comprised a magnetic sensing mechanism on a magnetic sensor wafer and a magnetic source on a MEMS wafer that further comprises a proof-mass. The magnetic sensor wafer and MEMS wafer are bonded through a bonding mechanism that comprises a hearting mechanism.

Abstract translation: 本文公开了一种MEMS陀螺仪，其中MEMS陀螺仪包括磁传感器晶片上的磁感测机构和进一步包括校验质量的MEMS晶片上的磁源。 磁传感器晶片和MEMS晶片通过包括心脏机构的接合机构结合。