公开(公告)号：US20160320240A1

公开(公告)日：2016-11-03

申请号：US15143176

申请日：2016-04-29

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

Inventor： Dirk WEILER ,  Kai-Marcel MUCKENSTURM ,  Frank HOCHSCHULZ

IPC: G01J5/20

CPC classification number: G01J5/20 ,  G01J5/023 ,  G01J5/024 ,  G01J2005/202

Abstract: A radiation detector with a substrate and a membrane, which is suspended above the substrate by a spacer is described, wherein the spacer thermally insulates a radiation sensor, which is formed in the membrane, from the substrate. Further, the spacer includes a first layer, which is electrically conducting and contacts a first pole of the radiation sensor and of the substrate, and a second layer, which is electrically conducting and electrically insulated from the first electrically conductive layer and contacts a second pole of the radiation sensor and of the substrate, wherein the second pole differs in polarity from the first pole.

Abstract translation: 描述了具有衬底和膜的辐射检测器，其通过间隔件悬挂在衬底上方，其中间隔件将形成在膜中的辐射传感器与衬底热绝缘。 此外，间隔物包括导电并接触辐射传感器和衬底的第一极的第一层和与第一导电层导电并与之电绝缘并与第二极接触的第二层 的辐射传感器和基板，其中第二极极性与第一极极性不同。

公开(公告)号：US20160282194A1

公开(公告)日：2016-09-29

申请号：US14865593

申请日：2015-09-25

Applicant: Maxim Integrated Products, Inc.

Inventor： Stanley Barnett ,  Cheng-Wei Pei ,  Arvin Emadi ,  Jerome C. Bhat

IPC: G01K7/02 ,  H01L35/34 ,  H01L35/32

CPC classification number: H01L35/34 ,  G01J5/022 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/04 ,  G01J5/0806 ,  G01J5/12 ,  G01J2005/065 ,  H01L35/32

Abstract: A sensor device, a sensor package, and method for fabricating a sensor device are described that include an integrated light blocker disposed on the thermopile device and a lens configured to direct light to the thermopile device. In an implementation, the thermopile device includes a substrate; a thermopile membrane disposed on the substrate, the thermopile membrane including at least one passivation layer; a thermopile disposed within the thermopile membrane, the thermopile including at least one thermocouple; and a light blocking layer disposed proximate to the thermopile membrane, the light blocking layer including an aperture disposed proximate to the thermopile.

Abstract translation: 描述了一种传感器装置，传感器封装和用于制造传感器装置的方法，其包括设置在热电堆装置上的集成光阻挡器和配置成将光引导到热电堆装置的透镜。 在实施例中，热电堆装置包括基板; 设置在所述基板上的热电堆膜，所述热电堆膜包括至少一个钝化层; 设置在热电堆膜内的热电堆，热电堆包括至少一个热电偶; 以及靠近所述热电堆膜设置的遮光层，所述遮光层包括靠近所述热电堆设置的孔。

公开(公告)号：US20160178444A1

公开(公告)日：2016-06-23

申请号：US14573689

申请日：2014-12-17

Applicant: INSTITUT NATIONAL D'OPTIQUE

Inventor： Hassane OULACHGAR ,  Christine ALAIN

IPC: G01J5/20

CPC classification number: G01J5/20 ,  G01J3/36 ,  G01J3/42 ,  G01J5/024 ,  G01J5/0853 ,  G01J5/0862 ,  G01J2003/1213 ,  G01J2005/202

Abstract: An uncooled microbolometer pixel for detection of electromagnetic radiation is provided that includes a substrate, a thermistor assembly and an absorber assembly. The thermistor assembly includes a thermistor platform suspended above the substrate, one or more thermistors on the thermistor platform, and an electrode structure electrically connecting the thermistors to the substrate. The absorber assembly includes an optical absorber over the thermistor assembly and a reflector provided under and forming a resonant cavity with the optical absorber. The optical absorber is in thermal contact with the thermistors and exposed to the electromagnetic radiation. The optical absorber includes a set of elongated resonators determining an absorption spectrum of the optical absorber. An array of microbolometer pixels is also provided, in which the resonators of different pixels can have different lengths determining different absorption spectra, thereby enabling configurable broadband and/or multi-frequency detection, in particular in the terahertz region.

Abstract translation: 提供了一种用于检测电磁辐射的未冷却的微热辐射计像素，其包括基底，热敏电阻组件和吸收体组件。 热敏电阻组件包括悬置在衬底上的热敏电阻平台，热敏电阻平台上的一个或多个热敏电阻和将热敏电阻电连接到衬底的电极结构。 吸收器组件包括位于热敏电阻组件上的光吸收体，以及设置在光吸收体下面并与光吸收体形成谐振腔的反射器。 光吸收器与热敏电阻热接触并暴露于电磁辐射。 光吸收器包括确定光吸收体的吸收光谱的一组细长谐振器。 还提供了一组微热辐射计像素，其中不同像素的谐振器可以具有确定不同吸收光谱的不同长度，从而实现特别是在太赫兹区域中的可配置的宽带和/或多频检测。

公开(公告)号：US20160169738A1

公开(公告)日：2016-06-16

申请号：US14964927

申请日：2015-12-10

Applicant: MELEXIS TECHNOLOGIES NV

Inventor： Appolonius Jacobus VAN DER WIEL

IPC: G01J1/42

CPC classification number: G01J1/4228 ,  G01J1/1626 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/06 ,  G01J5/061 ,  G01J5/12 ,  G01J5/14 ,  G01J5/20 ,  G01J2005/0048 ,  G01J2005/063 ,  G01J2005/065 ,  G01J2005/066 ,  G01J2005/068

Abstract: A semiconductor device for measuring IR radiation is disclosed. It comprises a substrate and a cap enclosing a cavity, a sensor pixel in the cavity, comprising a first absorber for receiving said IR radiation, a first heater, first temperature measurement means for measuring a first temperature; a reference pixel in the same cavity, comprising a second absorber shielded from said IR radiation, a second heater, and second temperature measurement means for measuring a second temperature; a control circuit for applying a first/second power to the first/second heater such that the first temperature equals the second temperature; and an output circuit for generating an output signal indicative of the IR radiation based on a difference between the first and second power.

Abstract translation: 公开了一种用于测量IR辐射的半导体器件。 它包括衬底和封闭空腔的盖，空腔中的传感器像素，包括用于接收所述IR辐射的第一吸收体，第一加热器，用于测量第一温度的第一温度测量装置; 相同空腔中的参考像素，包括屏蔽所述IR辐射的第二吸收体，第二加热器和用于测量第二温度的第二温度测量装置; 控制电路，用于将第一/第二功率施加到第一/第二加热器，使得第一温度等于第二温度; 以及输出电路，用于基于第一和第二功率之间的差产生指示IR辐射的输出信号。

公开(公告)号：US20160149071A1

公开(公告)日：2016-05-26

申请号：US15011812

申请日：2016-02-01

Applicant: Pyreos Ltd.

Inventor： Carsten GIEBELER ,  Neil CONWAY

IPC: H01L31/18

CPC classification number: H01L31/1884 ,  G01J1/44 ,  G01J5/023 ,  G01J5/024 ,  G01J5/046 ,  G01J5/34 ,  G01J2005/345 ,  H01L37/02 ,  H01L37/025 ,  H01L41/316

Abstract: A Method for producing a microsystem (1) with pixels includes: producing a thermal silicon oxide layer on the surface of a silicon wafer as a base layer (5) by oxidation of the silicon wafer; producing a silicon oxide thin layer on the base layer as a carrier layer (6)by thermal deposition; producing a platinum layer on the carrier layer by thermal deposition, whereby an intermediate product is produced; cooling the intermediate product to room temperature; pixel-like structuring of the platinum layer by removing surplus areas of the platinum layer, whereby bottom electrodes (8, 12) of the pixels (7, 8) are formed in pixel shape on the carrier layer in remaining areas; removing material on the side of the silicon wafer facing away from the base layer, so a frame (3) remains and a membrane (4) formed by the base layer and the carrier layer is spanned by the frame.

Abstract translation: 一种用于制造具有像素的微系统（1）的方法包括：通过硅晶片的氧化在硅晶片的表面上形成作为基底层（5）的热氧化硅层; 通过热沉积在基底层上形成作为载体层（6）的氧化硅薄层; 通过热沉积在载体层上产生铂层，由此产生中间产物; 将中间产物冷却至室温; 通过去除铂层的剩余区域来形成铂层的像素结构，由此像素（7,8）的底部电极（8,12）以剩余区域中的载体层上的像素形状形成; 去除硅晶片背离基底层的材料，因此保留框架（3），并且由基底层和载体层形成的膜（4）被框架横跨。

公开(公告)号：US20160131530A1

公开(公告)日：2016-05-12

申请号：US14932216

申请日：2015-11-04

Applicant: Seiko Epson Corporation

Inventor： Yasushi TSUCHIYA

IPC: G01J5/02 ,  C01G49/00

CPC classification number: G01J5/02 ,  C01G49/009 ,  C01P2002/34 ,  C01P2006/40 ,  C04B35/26 ,  C04B35/62218 ,  C04B35/62222 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/768 ,  G01J5/024 ,  G01J5/046 ,  G01J5/048 ,  G01J5/34 ,  H01L37/025

Abstract: A pyroelectric body includes an oxide containing iron, manganese, bismuth, and gadolinium, wherein the oxide has a perovskite-type crystal structure, and in the oxide, the ratio of the number of atoms of gadolinium to the total number of atoms of A-site elements is 8.0 at % or more and 18 at % or less. In the oxide, the ratio of the number of atoms of manganese to the total number of atoms of B-site elements is preferably 1.0 at % or more and 2.0 at % or less. In the oxide, the ratio of the number of atoms of titanium to the total number of atoms of B-site elements is preferably 0 at % or more and 4.0 at % or less. The pyroelectric body is preferably used at an environmental temperature in the range of −40° C. or higher and 40° C. or lower.

Abstract translation: 热电体包括含有铁，锰，铋和钆的氧化物，其中所述氧化物具有钙钛矿型晶体结构，并且在所述氧化物中，所述钆的原子数与所述原子的总数之比为A- 现场元素为8.0原子％以上且18原子％以下。 在氧化物中，锰原子数与B位元素的原子总数的比例优选为1.0原子％以上且2.0原子％以下。 在氧化物中，钛原子数与B位元素的原子总数的比优选为0at％以上且4.0at％以下。 热电体优选在-40℃以上且40℃以下的环境温度下使用。

公开(公告)号：US20160018267A1

公开(公告)日：2016-01-21

申请号：US14773359

申请日：2014-03-04

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： Andrey Timofeev ,  Juha Hassel ,  Arttu Luukanen ,  Panu Helistö ,  Leif Grönberg

IPC: G01J5/20 ,  H01L37/00

CPC classification number: G01J5/20 ,  G01J5/024 ,  G01J2005/106 ,  G01J2005/208 ,  H01L37/00

Abstract: A superconducting thermal detector (bolometer) of THz (sub-millimeter) wave radiation based on sensing the change in the amplitude or phase of a resonator circuit, consisting of a capacitor (Csh) and a superconducting temperature dependent inductor where the said inductor is thermally isolated from the heat bath (chip substrate) by micro-suspensions. The bolometer design includes a thin film inductor located on the membrane, a single or/and multi-layered thin film capacitor, and a thin film absorber of incoming radiation. The bolometer design can also include a lithographic antenna with antenna termination and/or a back reflector beneath the membrane for optimal wavelength detection by the resonance circuit. The superconducting thermal detector (bolometer) and arrays of these detectors operate in a temperature range from 1 Kelvin to 10 Kelvin.

Abstract translation: 基于感测谐振器电路的幅度或相位的变化的THz（亚毫米）波辐射的超导热探测器（辐射热计），由电容器（Csh）和超导温度依赖电感器组成，其中所述电感器是热的 通过微悬浮液从热浴（芯片基板）分离。 测辐射热计设计包括位于膜上的薄膜电感器，单层或/和多层薄膜电容器和进入辐射的薄膜吸收器。 测辐射热计设计还可以包括具有天线终端的光刻天线和/或膜下方的后反射器，用于谐振电路的最佳波长检测。 超导热探测器（测辐射热计）和这些探测器的阵列在1开尔文到10开尔文的温度范围内工作。

公开(公告)号：US20150377703A1

公开(公告)日：2015-12-31

申请号：US14718166

申请日：2015-05-21

Applicant: Nanohmics, Inc.

Inventor： Steve M. Savoy ,  Byron G. Zollars ,  Andrew J. Milder ,  Gennady Shvets

IPC: G01J3/12 ,  H01L31/18 ,  G01J3/02

CPC classification number: G01J3/12 ,  G01J1/0414 ,  G01J1/0429 ,  G01J1/0488 ,  G01J1/42 ,  G01J3/021 ,  G01J3/0224 ,  G01J3/26 ,  G01J3/2803 ,  G01J3/51 ,  G01J5/024 ,  G01J5/0809 ,  G01J5/0825 ,  G01J5/0862 ,  G01J5/20 ,  H01L31/18

Abstract: Embodiments of the invention are directed to integrated resonance detectors and arrays of integrated resonance detectors and to methods for making and using the integrated resonance detectors and arrays. Integrated resonance detectors comprise a substrate, a conducting mirror layer, an active layer, and a patterned conducting layer. Electromagnetic radiation is detected by transducing a specific resonance-induced field enhancement in the active layer to a detection current that is proportional to the incident irradiance.

Abstract translation: 本发明的实施例涉及集成谐振检测器和集成谐振检测器的阵列以及用于制造和使用集成谐振检测器和阵列的方法。 集成谐振检测器包括基板，导电镜层，有源层和图案化导电层。 通过将有源层中的特定共振诱导场增强转换成与入射辐照度成比例的检测电流来检测电磁辐射。

公开(公告)号：US20150316418A1

公开(公告)日：2015-11-05

申请号：US14653994

申请日：2013-10-23

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Harry Hedler ,  Michael Georg Wick

IPC: G01J5/14 ,  H01L35/32 ,  H01L35/34 ,  G01J5/02 ,  H01L27/16

CPC classification number: G01J5/14 ,  G01J5/02 ,  G01J5/024 ,  G01J5/12 ,  H01L27/16 ,  H01L35/32 ,  H01L35/34

Abstract: The embodiments relate to an infrared sensor having a microstructure with a plurality of thermocouples and a carrier element, wherein each thermocouple of the plurality of thermocouples includes a first sensor element having a first Seebeck coefficient and a second sensor element having a second Seebeck coefficient, wherein the first and the second sensor element extend from a front side of the carrier element through the carrier element to a rear side of the carrier element and wherein the first and the second sensor element are electrically connected to one another in a region of the upper side of the carrier element, wherein the carrier element forms a substrate for an integrated circuit, which is configured on the rear side of the carrier element and includes at least one component which is electrically connected to the first the second sensor element.

Abstract translation: 实施例涉及具有多个热电偶和载体元件的微结构的红外传感器，其中多个热电偶的每个热电偶包括具有第一塞贝克系数的第一传感器元件和具有第二塞贝克系数的第二传感器元件，其中 第一和第二传感器元件从载体元件的前侧通过载体元件延伸到载体元件的后侧，并且其中第一和第二传感器元件在上侧的区域中彼此电连接 其中所述载体元件形成用于集成电路的基板，所述基板被构造在所述载体元件的后侧上并且包括至少一个与所述第一传感器元件电连接的部件。

公开(公告)号：US20150308899A1

公开(公告)日：2015-10-29

申请号：US14699112

申请日：2015-04-29

Applicant: Melexis Techologies NV

Inventor： Luc BUYDENS ,  Sam MADDALENA

IPC: G01J5/02 ,  H01L31/18 ,  G01J5/20 ,  G01J5/08 ,  G01J5/04

CPC classification number: G01J5/0215 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/045 ,  G01J5/048 ,  G01J5/0806 ,  G01J5/0862 ,  G01J5/12 ,  G01J5/20 ,  H01L31/18

Abstract: The present invention relates to an integrated infrared sensor device, comprising a sensor substrate and a filter substrate. The sensor substrate has a back surface and a front surface opposite the back surface, in which the back surface has a cavity defined therein and the front surface has at least one infrared sensing element formed therein or arranged thereon, covered with a cap for protecting the at least one sensing element, e.g. against mechanical damage and dust, and/or against stray radiation. The filter substrate is arranged on the back surface of the sensor substrate such that the filter substrate at least partially covers the cavity. The filter substrate is adapted in shape and composition to transmit infrared radiation and to attenuate radiation in at least part of the visible light spectrum.

Abstract translation: 本发明涉及一种集成红外线传感器装置，其包括传感器基板和滤波器基板。 传感器基板具有后表面和与背面相对的前表面，其中后表面具有限定在其中的空腔，并且前表面具有形成在其中或布置在其中的至少一个红外感测元件，覆盖有用于保护 至少一个感测元件，例如 防止机械损伤和灰尘，和/或抵抗杂散辐射。 过滤器基板布置在传感器基板的后表面上，使得过滤器基板至少部分地覆盖空腔。 过滤器基板适于透射红外辐射的形状和组成，并在至少部分可见光光谱中衰减辐射。