公开(公告)号：US08115207B2

公开(公告)日：2012-02-14

申请号：US12606317

申请日：2009-10-27

Applicant: Dae Yong Kim ,  Hyun Tak Kim

Inventor： Dae Yong Kim ,  Hyun Tak Kim

IPC: H01L29/76

CPC classification number: H01J21/10

Abstract: Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.

Abstract translation: 提供了晶体管和制造晶体管的方法，更具体地，是发射热阴极电子的真空沟道晶体管和制造真空沟道晶体管的方法。 真空通道晶体管包括：主板; 具有形成在母板上的薄膜结构的微加热器构件; 阴极构件，其具有薄膜结构，所述薄膜结构与所述微加热器构件的中心部分间隔开并形成在所述微加热器构件上; 形成在所述阴极部件的上部的两个外壁上的闸板部件; 以及阳极部件，其间隔设置在所述栅极部件上的间隔隔开所述阴极部件的第二间隔，其中，所述阴极部件与所述阳极部件之间以第二间隔插入真空电子通过区域。

公开(公告)号：US08040038B2

公开(公告)日：2011-10-18

申请号：US12521641

申请日：2006-12-29

Applicant: Francesca Brunetti ,  Aldo Di Carlo ,  Massimiliano Lucci ,  Silvia Orlanducci ,  Riccardo Riccitelli ,  Maria Letizia Terranova

Inventor： Francesca Brunetti ,  Aldo Di Carlo ,  Massimiliano Lucci ,  Silvia Orlanducci ,  Riccardo Riccitelli ,  Maria Letizia Terranova

IPC: H01J1/62 ,  H01J63/04 ,  H01J9/00

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: Disclosed herein is a high frequency, cold cathode, triode-type, field-emitter vacuum tube including a cathode structure, an anode structure spaced from the cathode structure, and a control grid, wherein the cathode structure and the anode structure are formed separately and bonded together with the interposition of spacers, and the control grid is integrated in the anode structure.

Abstract translation: 本文公开了一种包括阴极结构，与阴极结构间隔开的阳极结构和控制栅格的高频，冷阴极，三极管型场致发射器真空管，其中阴极结构和阳极结构分开形成， 与间隔物的插入结合在一起，并且控制栅格集成在阳极结构中。

公开(公告)号：US07916507B2

公开(公告)日：2011-03-29

申请号：US12359198

申请日：2009-01-23

Applicant: Curtis A. Birnbach

Inventor： Curtis A. Birnbach

IPC: H02M3/33 ,  H02M7/533

CPC classification number: H02M7/533 ,  H01J21/10 ,  H02M7/51 ,  H02M7/53832

Abstract: Disclosed is a high voltage inverter for converting DC power to AC power with one or more AC output phases. The inverter has for each AC output phase an AC input phase circuit comprising first and second cold cathode field emission controllable electron tubes of triode, tetrode or pentode structure. Each electron tube has a first input node for connection to a high voltage DC potential in excess of 20 KV and a second input node for connection to ground. First electron tube is serially connected between a first end of a primary winding and ground, and second electron tube is serially connected between a second end of the primary winding and ground. Control circuitry controls the electron tubes so that the first and second electron tubes alternatively conduct so as to alternately bring the first and then second end of the primary winding approximately to the potential of ground.

Abstract translation: 公开了一种用于通过一个或多个AC输出相将DC电力转换成AC电力的高压逆变器。 逆变器为每个交流输出相提供包括三极管，四极管或五极管结构的第一和第二冷阴极场发射可控电子管的交流输入相电路。 每个电子管具有用于连接到超过20KV的高电压DC电位的第一输入节点和用于连接到地的第二输入节点。 第一电子管串联连接在初级绕组的第一端和地之间，第二电子管串连在初级绕组的第二端和地之间。 控制电路控制电子管，使得第一和第二电子管交替地导通，以便将初级绕组的第一端和第二端交替地接近地电位。

公开(公告)号：US20100102325A1

公开(公告)日：2010-04-29

申请号：US12606317

申请日：2009-10-27

Applicant: Dae Yong KIM ,  Hyun Tak Kim

Inventor： Dae Yong KIM ,  Hyun Tak Kim

IPC: H01L29/78 ,  H01L29/04 ,  H01L21/336

CPC classification number: H01J21/10

Abstract: Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.

Abstract translation: 提供了晶体管和制造晶体管的方法，更具体地，是发射热阴极电子的真空沟道晶体管和制造真空沟道晶体管的方法。 真空通道晶体管包括：主板; 具有形成在母板上的薄膜结构的微加热器构件; 阴极构件，其具有薄膜结构，所述薄膜结构与所述微加热器构件的中心部分间隔开并形成在所述微加热器构件上; 形成在所述阴极部件的上部的两个外壁上的闸板部件; 以及阳极部件，其间隔设置在所述栅极部件上的间隔隔开所述阴极部件的第二间隔，其中，所述阴极部件与所述阳极部件之间以第二间隔插入真空电子通过区域。

公开(公告)号：US20050018467A1

公开(公告)日：2005-01-27

申请号：US10895980

申请日：2004-07-22

Applicant: Ron Naaman ,  Erez Halahmi

Inventor： Ron Naaman ,  Erez Halahmi

IPC: C25C3/00 ,  G09G3/10 ,  H01J1/00 ,  H01J1/304 ,  H01J1/34 ,  H01J3/02 ,  H01J21/10 ,  H01J31/12 ,  H01J40/06

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: An electrons' emission device is presented. The device comprises an electrodes' arrangement including at least one Cathode electrode and at least one Anode electrode, the Cathode and Anode electrodes being arranged in a spaced-apart relationship; the device being configured to expose said at least one Cathode electrode to exciting illumination to thereby cause electrons' emission from said Cathode electrode, the device being operable as a photoemission switching device.

Abstract translation: 提出了电子发射装置。 该装置包括电极布置，其包括至少一个阴极电极和至少一个阳极电极，阴极和阳极电极以间隔的关系布置; 所述器件被配置为将所述至少一个阴极电极暴露于激发照明，从而引起来自所述阴极电极的电子发射，所述器件可操作为光电转换开关器件。

公开(公告)号：US20050017648A1

公开(公告)日：2005-01-27

申请号：US10895994

申请日：2004-07-22

Applicant: Ron Naaman ,  Erez Halahmi

Inventor： Ron Naaman ,  Erez Halahmi

IPC: C25C3/00 ,  G09G3/10 ,  H01J1/00 ,  H01J1/304 ,  H01J1/34 ,  H01J3/02 ,  H01J21/10 ,  H01J31/12 ,  H01J40/06

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: A display device is presented. The display device includes an electrodes' arrangement and an electrons' extractor. The electrodes' arrangement comprises a Cathode electrode layer having at least one Cathode electrode and an Anode electrode layer having at least one Anode electrode, the Cathode and Anode electrode layers being accommodated in a spaced-apart relationship with a gap between them. The Anode layer carries a luminescent screen assembly on its surface. The electrodes arrangement is operable to create a desired electrical field between the electrodes. The electrons' extractor operates to extract electrons from at least a selected region of the Cathode electrode layer by illuminating this Cathode region with exciting illumination of a predetermined wavelength range to cause the electron emission from the illuminated Cathode region.

Abstract translation: 呈现显示设备。 显示装置包括电极排列和电子提取器。 电极的布置包括具有至少一个阴极电极和具有至少一个阳极电极的阳极电极层的阴极电极层，阴极和阳极电极层与它们之间的间隙以间隔的关系容纳。 阳极层在其表面上带有荧光屏组件。 电极布置可操作以在电极之间产生期望的电场。 电子提取器通过用预定波长范围的激发照明照射该阴极区域，从而从阴极电极层的至少一个选定区域提取电子，以引起来自照明阴极区域的电子发射。

公开(公告)号：US20040075379A1

公开(公告)日：2004-04-22

申请号：US10646502

申请日：2003-08-23

Inventor： Sungho Jin

IPC: H01J001/62 ,  H01L021/00

CPC classification number: H01J3/021 ,  H01J9/025 ,  H01J21/10 ,  Y10S977/939

Abstract: The invention comprises a method of fabricating a vacuum microtube device comprising the steps of forming a cathode layer comprising an array of electron emitters, forming a gate layer comprising an array of openings for passing electrons from the electron emitters, and forming an anode layer for receiving electrons from the emitters. The cathode gate layer and the anode layer are vertically aligned and bonded together with intervening spacers on a silicon substrate so that electrons from respective emitters pass through respective gate openings to the anode. The use of substrate area is highly efficient and electrode spacing can be precisely controlled. An optional electron multiplying structure providing secondary electron emission material can be disposed between the gate layer and the anode in the path of emitted electrons.

Abstract translation: 本发明包括一种制造真空微管装置的方法，包括以下步骤：形成包括电子发射体阵列的阴极层，形成包含用于使来自电子发射体的电子的开口阵列的栅极层，以及形成用于接收的阳极层 来自发射体的电子。 阴极栅极层和阳极层与硅衬底上的中间间隔物垂直对准并结合在一起，使得来自各个发射体的电子通过相应的栅极开口到达阳极。 衬底面积的使用是高效的，电极间距可以精确控制。 提供二次电子发射材料的可选的电子倍增结构可以在发射电子的路径中设置在栅极层和阳极之间。

公开(公告)号：US5227699A

公开(公告)日：1993-07-13

申请号：US746355

申请日：1991-08-16

Applicant: Heinz H. Busta

Inventor： Heinz H. Busta

IPC: H01J21/06 ,  H01J1/304 ,  H01J3/02 ,  H01J21/10

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: Methods and apparatus for providing signal modulation or control of collector initialized and sustained field emission in field emitter devices without input circuit loading. A special control gate is used to modulate emission with no resultant steady-state emitter-gate current, thus increasing input resistance. The control gate may be well spaced from the emitter tip and the collector because it is not used to initiate and sustain emission from the emitter. This lowers emitter-gate and collector gate capacitances, thereby increasing input reactance for high frequency input signals. The collector-sustained field emission provides a low output resistance with relatively great collector-emitter spacing to provide high output reactance so that the high frequency response is extended.

Abstract translation: 提供信号调制或控制集电极初始化和持续场发射的方法和装置，无需输入电路负载。 特殊的控制栅极用于调制发射，没有产生稳态发射极 - 栅极电流，从而增加输入电阻。 控制栅极可以与发射极尖端和集电极良好地间隔开，因为它不用于启动和维持发射极的发射。 这降低了发射极和集电极栅极电容，从而增加了高频输入信号的输入电抗。 集电极持续场致发射具有较低的输出电阻，具有较高的集电极 - 发射极间隔，以提供高输出电抗，从而延长了高频响应。

公开(公告)号：US4745324A

公开(公告)日：1988-05-17

申请号：US862122

申请日：1986-05-12

Applicant: Richard B. True

Inventor： Richard B. True

IPC: H01J19/32 ,  H01J21/10 ,  H01J23/027 ,  H01J23/06 ,  H01J29/48 ,  H01J1/46 ,  H01J29/46

CPC classification number: H01J21/10 ,  H01J23/027 ,  H01J23/06

Abstract: A high-power switch tube is shown constructed from a plurality of electron guns each gun having a cathode and an anode. Between the cathode and anode is mounted a shadow grid closest to the cathode beyond which is mounted a control grid, a screen grid, and, in some applications, by a suppressor grid. Each anode is formed with an anode cavity having an opening that is smaller in dimension than the largest dimension of the cavity thus forming a Faraday cage collector which prevents secondary emission problems.

Abstract translation: 示出了由多个电子枪构成的大功率开关管，每个枪具有阴极和阳极。 在阴极和阳极之间安装最靠近阴极的阴影栅格，在阴极和阴极之间安装有一个控制网格，屏幕网格，并且在某些应用中由抑制器网格安装。 每个阳极形成有阳极腔，阳极腔的尺寸小于空腔的最大尺寸，从而形成防止二次排放问题的法拉第笼式收集器。

公开(公告)号：US1881910A

公开(公告)日：1932-10-11

申请号：US55867531

申请日：1931-08-22

Applicant: ROGERS RADIO TUBES LTD

Inventor： PARKER HENRY W

IPC: H01J21/10

CPC classification number: H01J21/10