Apparatus for producing secondary electrons, a secondary electrode, and an acceleration electrode
    21.
    发明申请
    Apparatus for producing secondary electrons, a secondary electrode, and an acceleration electrode 有权
    用于产生二次电子的装置,二次电极和加速电极

    公开(公告)号:US20040104657A1

    公开(公告)日:2004-06-03

    申请号:US10718777

    申请日:2003-11-21

    Inventor: Andreas Kyek

    CPC classification number: H01J43/02 H01J37/026 H01J37/06 H01J2237/0045

    Abstract: An apparatus includes a primary electrode and an acceleration electrode. The acceleration electrode or, alternatively, an additional secondary electrode contains a slot that extends obliquely through the acceleration electrode or through the secondary electrode. This measure allows secondary electrons to be produced in a highly effective manner.

    Abstract translation: 一种装置包括主电极和加速电极。 加速电极或备选地,附加的次级电极包含倾斜地穿过加速电极或通过次级电极延伸的槽。 该测量允许以高效的方式产生二次电子。

    Ion implantation with charge neutralization
    22.
    发明授权
    Ion implantation with charge neutralization 失效
    离子注入与电荷中和

    公开(公告)号:US06271529B1

    公开(公告)日:2001-08-07

    申请号:US09083707

    申请日:1998-05-22

    Abstract: An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode. The plasma generator also features a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode. A drift tube defined by walls through which the ion beam passes before reaching the workpiece is opened into by the aperture opens into the tube. A series of parallel, linear magnets are positioned perpendicular to the general path of the ion beam. The adjacent poles of adjacent magnets are of opposite polarity.

    Abstract translation: 提供离子注入机用于将离子注入到工件中。 离子注入机包括用于产生离子束并将其引导到工件的表面的装置和用于产生等离子体以中和离子束和工件表面的等离子体发生器的装置。 等离子体发生器具有由壁限定的等离子体发生器室,用于在室中产生的等离子体的相对较窄的出口孔,以离开室以中和来自阴极和阴极以及与阴极隔离的工件表面,阴极和阳极 房间。 等离子体发生器还具有布置在等离子体发生器室内的磁体,邻近室壁以产生磁场,以使从阴极发射的一次电子直接到达阳极。 等离子体发生器还具有导电屏蔽,其位于阳极和磁体之间的室内,屏蔽具有选择用于偏转电子的电位,磁场和导电屏蔽在操作期间有效以使来自阴极的电子延伸 在室内电离气体以在到达阳极之前产生等离子体的路径。 由到达工件的离子束通过的由壁限定的漂移管通过孔打开进入管中。 一系列平行的线性磁体垂直于离子束的通用路径定位。 相邻磁体的相邻磁极具有相反的极性。

    Method and apparatus for controlling the rate of emission of electrons
used for charge neutralization in ion implantation
    24.
    发明授权
    Method and apparatus for controlling the rate of emission of electrons used for charge neutralization in ion implantation 失效
    用于控制离子注入中用于电荷中和的电子发射速率的方法和装置

    公开(公告)号:US5126576A

    公开(公告)日:1992-06-30

    申请号:US626897

    申请日:1990-12-13

    CPC classification number: H01J37/026 H01J37/3171 H01J2237/0045 H01J2237/304

    Abstract: Method and apparatus for the control of the rate of emission of electrons added to an ion implantation beam to neutralize charging effects on semiconductor wafers being processed. A net charging current, or equivalent voltage, is sensed continuously, but is sampled only when a selected wafer, or multiple selected wafers, are positioned to receive the entire cross section of the ion beam. The sampled charging current is used to control the addition of charge-neutralizing electrons to the ion beam, thereby eliminating problems that ensue from the use of an averaged charging current that is sensed without regard to the relative beam position or the number of wafers being processed.

    Abstract translation: 用于控制添加到离子注入束的电子发射速率以中和对正在处理的半导体晶片的充电效应的方法和装置。 净充电电流或等效电压被连续地感测,但是仅当所选择的晶片或多个所选择的晶片被定位成接收离子束的整个横截面时才进行采样。 采样的充电电流用于控制向离子束添加电荷中和电子,从而消除了使用感测到的平均充电电流引起的问题,而不考虑相对光束位置或正在处理的晶片数量 。

    Ion implanter
    25.
    发明授权
    Ion implanter 失效
    离子注入机

    公开(公告)号:US5072125A

    公开(公告)日:1991-12-10

    申请号:US592659

    申请日:1990-10-04

    CPC classification number: H01J37/026 H01J2237/0045 H01J2237/31701

    Abstract: An ion implanter has a sample table on which a sample is placed, and means for injecting ions into the sample by applying an ion beam to the sample on the sample table. The ion implanter has magnetic field applying means for generating radial magnetic fields on the surface of the sample from near the center of the sample to outside of the outer periphery of the sample. The secondary electrons generated when the ion beam irradiates the sample table or the sample, including the secondary electrons generated from the sample table near the outer periphery of the sample, are trapped in the magnetic fields and transferred to the central portion of the sample. The secondary electrons are attracted by the electrostatic charge of the ions injected to the surface of the sample and recombine with the ions. Consequently, the electrostatic charge on the surface of the sample is decreased, preventing generation of device defects caused by electrostatic discharge damage.

    Abstract translation: 离子注入机具有放置样品的样品台,以及通过向样品台上的样品施加离子束将离子注入样品的装置。 离子注入机具有磁场施加装置,用于从样品中心附近在样品的外周附近产生径向磁场。 当离子束照射样品台或样品时产生的二次电子,包括从样品外周附近的样品台产生的二次电子被捕获在磁场中并转移到样品的中心部分。 二次电子被注入到样品表面的离子的静电荷吸引,并与离子重新结合。 因此,样品表面上的静电电荷减少,防止由静电放电损伤引起的器件缺陷的产生。

    Method for controlling charging of sample and scanning electron microscope
    28.
    发明授权
    Method for controlling charging of sample and scanning electron microscope 有权
    用于控制样品充电的方法和扫描电子显微镜

    公开(公告)号:US08487251B2

    公开(公告)日:2013-07-16

    申请号:US13059537

    申请日:2009-08-08

    Abstract: An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.

    Abstract translation: 本发明的目的是提供一种扫描电子显微镜,其目的在于可以控制从样品与其他部件发射的电子的碰撞产生的电子的量,以及使用电子量的控制的样品充电控制方法。 为了实现该目的,提出了一种扫描电子显微镜,其包括电子束可以通过的多个孔,以及用于切换电子束的孔的机构,以及通过切换孔来控制样品充电的方法。 多个孔是至少两个孔。 分别具有不同二次电子发射效率的部分设置在与样品相对的一侧上的至少两个孔的周边部分上。 可以通过切换孔来控制从样品发射的电子的碰撞产生的电子的量。

    Transmission electron microscope
    29.
    发明授权
    Transmission electron microscope 失效
    透射电子显微镜

    公开(公告)号:US08362428B2

    公开(公告)日:2013-01-29

    申请号:US12668267

    申请日:2008-06-05

    Abstract: A transmission electron microscope has a target body position on the electron optical axis of the microscope, and an electrically conductive body off the axis of the microscope. The microscope also has an electron source for producing an axial electron beam. In use, the beam impinges upon a target body located at the target body position. The microscope further has a system for simultaneously producing a separate off-axis electron beam. In use, the off-axis electron beam impinges on the electrically conductive body causing secondary electrons to be emitted therefrom. The electrically conductive body is located such that the emitted secondary electrons impinge on the target body to neutralise positive charge which may build up on the target body.

    Abstract translation: 透射电子显微镜在显微镜的电子光轴上具有目标体位置,并且离开显微镜轴线的导电体。 显微镜还具有用于产生轴向电子束的电子源。 在使用中,梁撞击位于目标体位置的目标体。 显微镜还具有同时产生单独的离轴电子束的系统。 在使用中,离轴电子束照射在导电体上,导致从其发射二次电子。 导电体被定位成使得发射的二次电子撞击目标体以中和可能在目标体上累积的正电荷。

    Method for charging substrate to a potential
    30.
    发明授权
    Method for charging substrate to a potential 有权
    将基板充电到电位的方法

    公开(公告)号:US07507959B2

    公开(公告)日:2009-03-24

    申请号:US11644591

    申请日:2006-12-21

    CPC classification number: G21K7/00 H01J37/026 H01J2237/0045 H01J2237/0048

    Abstract: A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.

    Abstract translation: 将绝缘基板的表面充电至目标电位。 在一个实施方案中,表面充满了较高能量的电子束,使得电子产率大于1。 随后,表面被低能电子束淹没,使得电子产率小于1。 在另一个实施例中,衬底被提供有处于大于目标电位的初始电位的状态的表面。 然后用带电粒子充满表面,使得散射颗粒的电荷产率小于1,使得达到达到目标电势的稳定状态。 另一个实施例涉及一种用于将绝缘衬底的表面充电到目标电位的装置。

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