公开(公告)号：US07564048B2

公开(公告)日：2009-07-21

申请号：US11479397

申请日：2006-06-30

Applicant: Joseph P. Dzengeleski ,  Greg Gibilaro ,  Gregg Norris ,  David Olden ,  Tamer Onat

Inventor： Joseph P. Dzengeleski ,  Greg Gibilaro ,  Gregg Norris ,  David Olden ,  Tamer Onat

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/302 ,  H01J37/32412 ,  H01J2237/24405 ,  H01J2237/24507

Abstract: A Faraday sensor test system includes a Faraday sensor configured to intercept a quantity of ions incident on said Faraday sensor, a primary conductor and a test conductor coupled to said Faraday sensor, and a controller. The controller is configured to automatically provide a test current into the test conductor in response to a test condition. The controller is further configured to receive a return current from the primary conductor in response to the test current and to compare the return current to a value representative of the test current to determine a condition of a conductive path comprising the test conductor, the Faraday sensor, and the primary conductor.

Abstract translation: 法拉第传感器测试系统包括法拉第传感器，其被配置为拦截入射在所述法拉第传感器上的一定数量的离子，耦合到所述法拉第传感器的主导体和测试导体以及控制器。 控制器被配置为响应于测试条件自动向测试导体提供测试电流。 控制器还被配置为响应于测试电流从主导体接收返回电流，并将返回电流与表示测试电流的值进行比较，以确定包含测试导体的导电路径的状况，法拉第传感器 ，和主导体。

公开(公告)号：US20090008578A1

公开(公告)日：2009-01-08

申请号：US12168241

申请日：2008-07-07

Applicant: Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

Inventor： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

IPC: H01J37/08

CPC classification number: G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber, with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted.

Abstract translation: 一种标本制造装置，包括：离子束照射光学系统，用离子束照射放置在室中的样品; 用于安装通过用离子束照射分离的样本的样本保持器; 用于保持样品架的保持器盒; 用于保持样品和保持器盒的样品台; 以及用于将样本移动到样本保持器的探针，其中，在保持样本保持器的状态下，保持器盒被转移到腔室的外部。

公开(公告)号：US07474986B2

公开(公告)日：2009-01-06

申请号：US11497565

申请日：2006-08-01

Applicant: Janet Teshima ,  Daniel E. Partin ,  James E. Hudson

Inventor： Janet Teshima ,  Daniel E. Partin ,  James E. Hudson

IPC: G01R27/28

CPC classification number: H01J37/28 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/24592 ,  H01J2237/2485 ,  H01J2237/2817 ,  H01J2237/31745 ,  H01L21/67253 ,  H01L21/67276

Abstract: The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.

Abstract translation: 本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。 在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。 该方法包括以下动作。 检查半导体晶片以定位缺陷。 然后将与定位的缺陷相对应的位置存储在缺陷文件中。 使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。 自动识别缺陷，得到缺陷的带电粒子束图像。 然后分析带电粒子束图像以表征缺陷。 然后确定配方以进一步分析缺陷。 然后自动执行配方以使用带电粒子束切割缺陷的一部分。 切割的位置是基于带电粒子束图像的分析。 最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

公开(公告)号：US20080296497A1

公开(公告)日：2008-12-04

申请号：US12168232

申请日：2008-07-07

Applicant: Satoshi TOMIMATSU ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

Inventor： Satoshi TOMIMATSU ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

IPC: G01N23/00

CPC classification number: G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.

Abstract translation: 一种用于分析半导体器件的系统，包括：第一离子束装置，包括：样品台，用于安装样品基板; 其中放置样品台的真空室; 离子束照射光学系统照射样品基板; 样本保持器，其容纳通过离子束的照射与样品基板分离的多个样本; 以及从所述样品基材中提取分离出的试样并将分离的试样转移到所述试样保持器的探针。 对样品进行精加工的第二离子束装置; 以及用于分析成品样品的分析器，其中所述第一离子束装置在真空条件下分离所述样品和所述探针。

公开(公告)号：US20080078953A1

公开(公告)日：2008-04-03

申请号：US11537050

申请日：2006-09-29

Applicant: Atul GUPTA ,  Anthony Renau ,  Donna L. Smatlak ,  Joseph C. Olson

Inventor： Atul GUPTA ,  Anthony Renau ,  Donna L. Smatlak ,  Joseph C. Olson

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

Abstract: A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

Abstract translation: 公开了一种改善离子注入通量和剂量均匀性的技术。 在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。 该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动 在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。 该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

公开(公告)号：US07345856B2

公开(公告)日：2008-03-18

申请号：US11259549

申请日：2005-10-25

Applicant: Kenneth P. Regan

Inventor： Kenneth P. Regan

IPC: H02H3/00 ,  H02H7/00

CPC classification number: H01J37/3171 ,  H01J27/026 ,  H01J37/08 ,  H01J37/241 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/0206 ,  H01J2237/0812 ,  H02H7/003

Abstract: In an ion bean acceleration system, transient electrical arc suppression and ion beam accelerator biasing circuitry. Two-terminal circuitry, connectable in series, for suppressing arcs by automatically sensing arc conditions and switch from at least a first operating state providing a relatively low resistance electrical pathway for current between source and load terminals to at least a second, relatively high resistance electrical pathway. Selection of circuit component characteristics permits controlling the delay in returning from the second state to the first state after the arc has been suppressed.

Abstract translation: 在离子豆加速系统中，瞬态电弧抑制和离子束加速器偏置电路。 两端子电路，可串联连接，用于通过自动感测电弧条件并从至少第一工作状态切换来抑制电弧，从而提供用于源极和负载端子之间的电流的相对较低电阻的电路，至少第二相对高电阻的电 途径。 选择电路元件特性允许控制在电弧被抑制之后从第二状态返回到第一状态的延迟。

公开(公告)号：US20080046787A1

公开(公告)日：2008-02-21

申请号：US11838542

申请日：2007-08-14

Applicant: Akihito ANPO ,  Jun Kasahara ,  Hitoshi Higurashi ,  Shigehiro Hara

Inventor： Akihito ANPO ,  Jun Kasahara ,  Hitoshi Higurashi ,  Shigehiro Hara

IPC: G06F11/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/68 ,  G03F1/78 ,  H01J37/302 ,  H01J2237/30416 ,  H01J2237/30455 ,  H01J2237/30472

Abstract: A generation apparatus of writing error verification data for a pattern writing apparatus includes a data extraction part configured to extract, from layout data including a figure pattern to be written, part of the layout data required for an operation of a function having a writing error occurred after starting writing by the pattern writing apparatus which performs writing on a target workpiece based on the layout data, and a verification data generation part configured to perform a merge process based on extracted part of the layout data, and to generate writing error verification data, for which the merge process has been performed, for verifying the writing error of the pattern writing apparatus.

Abstract translation: 一种用于写入模式写入装置的错误验证数据的生成装置包括数据提取部件，被配置为从包括要写入的图形模式的布局数据中提取出现写入错误的功能的操作所需的布局数据的一部分 在通过基于布局数据对目标工件执行写入的图案写入装置开始写入之后，以及验证数据生成部，被配置为基于提取的布局数据的一部分执行合并处理，并且生成写入错误验证数据， 对其进行了合并处理，以验证图案写入装置的写入错误。

公开(公告)号：US20070221872A1

公开(公告)日：2007-09-27

申请号：US11390518

申请日：2006-03-27

Applicant: Joseph C. Olson ,  Morgan Evans

Inventor： Joseph C. Olson ,  Morgan Evans

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/1477 ,  H01J37/302 ,  H01J2237/0041 ,  H01J2237/30488 ,  H01L21/265

Abstract: An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The controller is configured to control the scan frequency in response to an operating parameter of the ion implanter. The operating parameter is at least partially dependent on the energy of the ion beam. The scan frequency is greater than a scan frequency threshold if the energy is greater than an energy threshold, and the scan frequency is less than the scan frequency threshold if the energy is less than the energy threshold.

Abstract translation: 离子注入机包括被配置为产生离子束的离子束发生器，配置成以扫描频率沿至少一个方向扫描离子束的扫描器和控制器。 控制器被配置为响应于离子注入机的操作参数来控制扫描频率。 操作参数至少部分取决于离子束的能量。 如果能量大于能量阈值，则扫描频率大于扫描频率阈值，如果能量小于能量阈值，则扫描频率小于扫描频率阈值。

公开(公告)号：US20070145302A1

公开(公告)日：2007-06-28

申请号：US11701415

申请日：2007-02-02

Applicant: Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

Inventor： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

IPC: H01J37/08

CPC classification number: G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A system for analyzing a semiconductor device, including: a first specimen fabricating apparatus including: a vacuum chamber in which a sample substrate is placed, an ion beam irradiating optical system for forming a specimen on the sample substrate, a specimen holder to mount the specimen, and a probe for removing the specimen from the sample substrate; a second specimen fabricating apparatus, and an analyzer to analyze the specimen, wherein said first specimen fabrication apparatus has a function to separate the specimen mounted on the specimen holder and the probe in a vacuum condition.

Abstract translation: 一种用于分析半导体器件的系统，包括：第一试样制造装置，包括：放置样品基板的真空室，用于在样品基板上形成试样的离子束照射光学系统，用于安装试样的试样保持器 以及用于从样品基板除去试样的探针; 第二试样制造装置和分析器，其中所述第一试样制造装置具有在真空条件下分离安装在试样架上的试样和探针的功能。

公开(公告)号：US07220971B1

公开(公告)日：2007-05-22

申请号：US11320515

申请日：2005-12-28

Applicant: Sha X. Chang ,  Otto Z. Zhou

Inventor： Sha X. Chang ,  Otto Z. Zhou

IPC: G01K1/08

CPC classification number: H01J37/304 ,  G21K5/04 ,  H01J33/02 ,  H01J33/04 ,  H01J37/302 ,  H01J37/317 ,  H01J2201/30469 ,  H01J2237/0635 ,  H01J2237/2004 ,  H01J2237/2006 ,  H01J2237/316

Abstract: Multi-pixel electron microbeam irradiator systems and methods are provided with particular applicability for selectively irradiating predetermined cells or cell locations. A multi-pixel electron microbeam irradiator system can include a plurality of individually addressable electron field emitters sealed in a vacuum. The multi-pixel electron microbeam irradiator system can include an anode comprising one or more electron permeable portions corresponding to the plurality of electron field emitters. Further, the multi-pixel electron microbeam irradiator system can include a controller operable to individually control electron extraction from each of the electron field emitters for selectively irradiating predetermined locations such as cells or cell locations.

Abstract translation: 提供了多像素电子微束照射器系统和方法，其特别适用于选择性地照射预定的细胞或细胞位置。 多像素电子微束照射器系统可以包括在真空中密封的多个可单独寻址的电子场发射器。 多像素电子微束照射器系统可以包括阳极，该阳极包括对应于多个电子场发射体的一个或多个电子透过部分。 此外，多像素电子微束照射器系统可以包括控制器，其可操作以单独地控制来自每个电子场发射器的电子提取，以选择性地照射诸如单元或单元位置的预定位置。