Abstract:
A base substrate includes a ceramic sintered substrate having through holes, first and second metal wirings which are integrally disposed so as to be connected to the surface of the ceramic sintered substrate and the inside of the through holes, and first and second active metal layers which are disposed between the ceramic sintered substrate and the first and second metal wirings.
Abstract:
A multi-layer micro-wire structure includes a substrate having a surface. A plurality of micro-channels is formed in the substrate. A first material composition is located in a first layer only in each micro-channel and not on the substrate surface. A second material composition different from the first material composition is located in a second layer different from the first layer only in each micro-channel and not on the substrate surface. The first material composition in the first layer and the second material composition in the second layer form an electrically conductive multi-layer micro-wire in each micro-channel.
Abstract:
A solder layer and an electronic device bonding substrate having high bonding strength of a device and low bonding failure even by a simplified bonding method of a device to a substrate and a method for manufacturing the same are provided.A device bonding substrate 1 including a substrate 2 and a lead free solder layer 5 formed on said substrate has a solder layer 5 consisting of a plurality of layers having mutually different phases, and oxygen concentration on the upper surface of the solder layer is lower than 30 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer 5. Carbon concentration on the upper surface of the solder layer 5 may be lower than 10 atomic % of the concentration of the metal component which is the most oxidizable among the metal components making up the upper layer of the solder layer.
Abstract:
In a layered structure having at least a substrate and a photosensitive resin layer or cured film layer formed on the substrate and containing an inorganic filler, the content of the inorganic filler in the photosensitive resin layer or cured film layer is low on the side contacting the substrate and high on the surface side away from the substrate, so that a linear thermal expansion coefficient of the photosensitive resin layer or cured film layer as a whole is maintained as low as possible. Preferably, the inorganic filler content in the layer gradually increases continuously obliquely or stepwise from the side contacting the substrate to the surface side away from the substrate. A photosensitive dry film containing the above-mentioned photosensitive resin layer is suitable for use as a solder resist or an interlayer resin insulation layer of a printed wiring board.
Abstract:
A mounting structure formed by bonding the electrodes of a substantially planar electronic component to the electrodes provided on the mounting surface of a circuit board includes a sealing body 5 formed between one main surface of the electronic component and the circuit board and/or on the other main surface of the electronic component. The sealing body 5 is composed of a plurality of layers having different adhesive strengths and thermal conductivities, wherein a layer having a relatively high adhesion strength is arranged in a region being in contact with either one of the electronic component and the circuit board, and a layer having a relatively high thermal conductivity is arranged in a region being in contact with none of the electronic component and the circuit board.
Abstract:
A multilayer interconnection board includes a plurality of laminated ceramic layers. Wiring electrodes are disposed on principal surfaces of the ceramic layers, and dot patterns are arranged around the wiring electrodes. The dot patterns are arranged such that the density distribution thereof is varied such that the ratio of the presence of the dot patterns in the vicinity of the wiring electrode is relatively large and the ratio of the presence is reduced as the distance from the wiring electrode increases.
Abstract:
A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.
Abstract:
In a multilayer ceramic substrate manufactured by a non-shrinking process, a bonding strength of an external conductive film formed on a primary surface of the multilayer ceramic substrate is increased. After a laminate of a multilayer ceramic substrate is formed from first ceramic layers and second shrinkage suppressing ceramic layers, and an underlayer is formed along one primary surface of the multilayer ceramic substrate, an external conductive film is formed on the underlayer. A non-sintering ceramic material powder in a non-sintered state is included in both the external conductive film and the underlayer, and this non-sintering ceramic material powder is fixed due to diffusion of a glass component from the first ceramic layers.
Abstract:
A solder bump and a conductive connection structure are provided which can conductively connect a semiconductor chip and a substrate with high connection reliability. Filler 5 is contained in a solder bump 6 and a solder joint 17 which connect a connection electrode 3 of a semiconductor chip 2 and a substrate 11, and the filler has a larger density on the side of the connection electrode 3 than on the side of the substrate 11 in the solder joint 17. Therefore, in the cooling solidification of solder, the shrinkage of the solder joint 17 near the connection electrode 3 of the semiconductor chip 2 is reduced by the filler 5 and the occurrence of a stress is reduced on the peripheral portion of the connection electrode 3, thereby preventing the occurrence of cracks near the joint.
Abstract:
A solder bump and a conductive connection structure are provided which can conductively connect a semiconductor chip and a substrate with high connection reliability. Filler 5 is contained in a solder bump 6 and a solder joint 17 which connect a connection electrode 3 of a semiconductor chip 2 and a substrate 11, and the filler has a larger density on the side of the connection electrode 3 than on the side of the substrate 11 in the solder joint 17. Therefore, in the cooling solidification of solder, the shrinkage of the solder joint 17 near the connection electrode 3 of the semiconductor chip 2 is reduced by the filler 5 and the occurrence of a stress is reduced on the peripheral portion of the connection electrode 3, thereby preventing the occurrence of cracks near the joint.