公开(公告)号：US20240110277A1

公开(公告)日：2024-04-04

申请号：US18530653

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/34 ,  C23C16/45527 ,  C23C16/458

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20240096632A1

公开(公告)日：2024-03-21

申请号：US18367491

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Charles Dezelah ,  Jan Willem Maes

IPC: H01L21/285 ,  C23C16/16 ,  C23C16/455

CPC classification number: H01L21/28568 ,  C23C16/16 ,  C23C16/45527 ,  C23C16/45557

Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.

公开(公告)号：US11495455B2

公开(公告)日：2022-11-08

申请号：US17150153

申请日：2021-01-15

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: H01L21/02 ,  H01L21/321 ,  B05D1/00 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/54 ,  C23C16/46 ,  C23C16/30 ,  H01L21/67 ,  B05D7/24 ,  H01L21/32

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

公开(公告)号：US20210358739A1

公开(公告)日：2021-11-18

申请号：US17388773

申请日：2021-07-29

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Delphine Longrie ,  Hidemi Suemori ,  Jan Willem Maes ,  Marko Tuominen ,  Shaoren Deng ,  Ivo Johannes Raaijmakers ,  Andrea Illiberi

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/56 ,  H01L21/768 ,  H01L21/67 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L23/31 ,  H01L21/32 ,  H01L21/027 ,  H01L21/321 ,  H01L21/3105

Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

公开(公告)号：US20210351031A1

公开(公告)日：2021-11-11

申请号：US17370263

申请日：2021-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

IPC: H01L21/02 ,  C23C16/40 ,  H01L21/32 ,  C23C16/455

Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

公开(公告)号：US10937645B2

公开(公告)日：2021-03-02

申请号：US16033485

申请日：2018-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/321 ,  B05D1/00 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/54 ,  C23C16/46 ,  C23C16/30 ,  H01L21/67 ,  B05D7/24 ,  H01L21/32

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

公开(公告)号：US20190019674A1

公开(公告)日：2019-01-17

申请号：US16033485

申请日：2018-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: H01L21/02

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

公开(公告)号：US20170323776A1

公开(公告)日：2017-11-09

申请号：US15581726

申请日：2017-04-28

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.