公开(公告)号：US20240234205A9

公开(公告)日：2024-07-11

申请号：US18381232

申请日：2023-10-18

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Holger Saare ,  Salvatore Luiso ,  Jaebeom Lee

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/28568

Abstract: Methods for filling a recessed feature on a substrate are disclosure. The methods may include, providing a substrate with a recessed feature including a metal liner layer, partially etching the metal liner, and subsequently filing the recessed feature with a gap-fill material employing a combination of etch and cyclical deposition processes. Semiconductor structures including a gap fill metal film disposed in a recessed featured are also disclosed.

公开(公告)号：US20240213027A1

公开(公告)日：2024-06-27

申请号：US18545183

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Holger Saare ,  Sukanya Datta

IPC: H01L21/285 ,  H01J37/32

CPC classification number: H01L21/28568 ,  H01J37/32522 ,  C23C16/06 ,  H01J2237/2001 ,  H01J2237/332

Abstract: Methods and systems of depositing molybdenum are disclosed. Exemplary methods include using a plasma-assisted deposition process to non-selectively and/or conformally form plasma-deposited molybdenum on a first material and on a second material.

公开(公告)号：US20240136224A1

公开(公告)日：2024-04-25

申请号：US18381232

申请日：2023-10-17

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Holger Saare ,  Salvatore Luiso ,  Jaebeom Lee

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/28568

Abstract: Methods for filling a recessed feature on a substrate are disclosure. The methods may include, providing a substrate with a recessed feature including a metal liner layer, partially etching the metal liner, and subsequently filing the recessed feature with a gap-fill material employing a combination of etch and cyclical deposition processes. Semiconductor structures including a gap fill metal film disposed in a recessed featured are also disclosed.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20230163028A1

公开(公告)日：2023-05-25

申请号：US18148687

申请日：2022-12-30

Applicant: ASM IP Holding B.V.

Inventor： Salvatore Luiso ,  YoungChol Byun ,  Holger Saare ,  Jaebeom Lee ,  Sukanya Datta ,  Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/76879 ,  C23C16/0236 ,  C23C16/45553 ,  C23C16/06

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.