公开(公告)号：US20250112057A1

公开(公告)日：2025-04-03

申请号：US18898455

申请日：2024-09-26

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah ,  Daniele Piumi

IPC: H01L21/3213 ,  C09K13/08 ,  H01L21/67

Abstract: The present disclosure relates to methods for etching a molybdenum (Mo) film and systems for performing said method. The disclosed methods comprise, exposing a substrate comprising an Mo outer layer to an oxygen containing reactant to convert at least a portion of the Mo outer layer to molybdenum oxide (MoOx), then exposing the substrate to an etchant that comprises one or more S—X bond(s), P—X bond(s), and Si—X bond(s), where X is Cl or Br, to convert the molybdenum oxide to a volatile Mo containing compound that is removed from the surface of the substrate, thereby reducing the thickness of the Mo outer layer.

公开(公告)号：US20250109492A1

公开(公告)日：2025-04-03

申请号：US18900427

申请日：2024-09-27

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah ,  Michael Eugene Givens ,  Giuseppe Alessio Verni

IPC: C23C16/30 ,  C23C16/44

Abstract: A method, system and apparatus are disclosed for depositing a threshold voltage shifting layer comprising an oxygen-free metal sulfide on a substrate, wherein the depositing further comprises, providing a substrate having a surface within a reaction chamber, a) providing an oxygen-free precursor comprising a metal to the reaction chamber to contact the surface, b) providing an oxygen-free, sulfur-containing reactant to the reaction chamber to contact the surface, c) purging the reaction chamber and repeating operations a), b) or c) or any combination thereof until the threshold voltage shifting layer of a predetermined thickness is deposited on the surface.

公开(公告)号：US20250087478A1

公开(公告)日：2025-03-13

申请号：US18883125

申请日：2024-09-12

Applicant: ASM IP Holding B.V.

Inventor： Patricio Eduardo Romero ,  Charles Dezelah

IPC: H01L21/02

Abstract: Methods for forming a metal silicate layer for controlling a threshold voltage of metal-oxide semiconductor field effect transistor (MOSFET) are disclosed. The methods include forming a metal silicate threshold adjusting layer on a substrate by contacting the substrate with a precursor comprising an organosilanol precursor or a siloxide precursor.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.