公开(公告)号：US10998496B2

公开(公告)日：2021-05-04

申请号：US16859350

申请日：2020-04-27

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Chi Hong Ching ,  Xiaodong Wang ,  Mahendra Pakala ,  Rongjun Wang

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L27/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/04 ,  G11C11/22 ,  H01L43/06 ,  H01L43/14 ,  G11C11/18

Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.

公开(公告)号：US10763090B2

公开(公告)日：2020-09-01

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller Allen ,  Lara Hawrylchak ,  Zhigang Xie ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Xianmin Tang ,  Zhendong Liu ,  Tza-Jing Gung ,  Srinivas Gandikota ,  Mei Chang ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Zhenbin Ge

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/56 ,  H01J37/32

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：US10468592B1

公开(公告)日：2019-11-05

申请号：US16029844

申请日：2018-07-09

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Chi Hong Ching ,  Xiaodong Wang ,  Rongjun Wang ,  Mahendra Pakala

IPC: H01L43/12 ,  H01F10/32 ,  H01F41/32 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: Embodiments of the present disclosure are for systems and methods for fabrication of a magnetic tunnel junction stack. This fabrication can occur via methods including one or more of (1) heating the substrate after the deposition of a buffer layer on the substrate, prior to deposition of a seed layer; (2) cooling the substrate after the deposition of a second pinning layer, before deposition of a structure blocking layer; (3) heating the substrate during the deposition of a tunnel barrier layer and then cooling it after the deposition of the tunnel barrier layer is complete; (4) heating the substrate after the deposition of a magnetic storage layer on the tunnel barrier layer; and (5) cooling the substrate after the deposition of the magnetic storage layer before a first interlayer of the capping layer is deposited.

公开(公告)号：US09929310B2

公开(公告)日：2018-03-27

申请号：US13947857

申请日：2013-07-22

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandia ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/00 ,  H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01J37/32 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20170350001A1

公开(公告)日：2017-12-07

申请号：US15679480

申请日：2017-08-17

Applicant: Applied Materials, Inc.

Inventor： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  H01J37/342 ,  H01J37/3423

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

公开(公告)号：US12094699B2

公开(公告)日：2024-09-17

申请号：US18237934

申请日：2023-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20240304495A1

公开(公告)日：2024-09-12

申请号：US18118017

申请日：2023-03-06

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Zhen Liu ,  Yongqian Gao ,  Michael S. Jackson ,  Rongjun Wang

IPC: H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/76862 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01J2237/332

Abstract: A method of forming a semiconductor device structure by utilizing a hydrogen plasma treatment to promote selective deposition is disclosed. In some embodiments, the method includes forming a metal layer within at least one feature on the semiconductor device structure. The method includes exposing the metal layer to a hydrogen plasma treatment. The hydrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal film growth. In some embodiments, the hydrogen plasma treatment comprises substantially only hydrogen ions.

公开(公告)号：US11898236B2

公开(公告)日：2024-02-13

申请号：US17506075

申请日：2021-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong Wang ,  Halbert Chong ,  John C. Forster ,  Irena H. Wysok ,  Tiefeng Shi ,  Gang Fu ,  Renu Whig ,  Keith A Miller ,  Sundarapandian Ramalinga Vijayalakshmi Reddy ,  Jianxin Lei ,  Rongjun Wang ,  Tza-Jing Gung ,  Kirankumar Neelasandra Savandaiah ,  Avinash Nayak ,  Lei Zhou

IPC: C23C14/34 ,  H01J37/32 ,  C23C14/50

CPC classification number: C23C14/345 ,  C23C14/3485 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  C23C14/50

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：US11552244B2

公开(公告)日：2023-01-10

申请号：US17193966

申请日：2021-03-05

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Chi Hong Ching ,  Rongjun Wang ,  Mahendra Pakala

IPC: H01L29/82 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.

公开(公告)号：US20210328104A1

公开(公告)日：2021-10-21

申请号：US17362794

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01L33/00 ,  H01J37/32 ,  H01L29/20

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.