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公开(公告)号：US11459651B2
公开(公告)日：2022-10-04
申请号：US15426102
申请日：2017-02-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong Wang , Rongjun Wang , Hanbing Wu
Abstract: Embodiments of a tantalum (Ta) target pasting process for deposition chambers using RF powered processes include pasting at least a portion of the inner surfaces of the process chamber with Ta after using RF sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the Ta pasting layer. The Ta pasting encapsulates the dielectric material that has been inadvertently sputtered on the process chamber inner surfaces such as the shield. Oxygen is then flowed into the process chamber to form a tantalum oxide layer on the Ta pasting layer to further reduce contamination and particle generation.
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2.发明授权公开(公告)号：US11810770B2
公开(公告)日：2023-11-07
申请号：US17490840
申请日：2021-09-30
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong Wang , Joung Joo Lee , Fuhong Zhang , Martin Lee Riker , Keith A. Miller , William Fruchterman , Rongjun Wang , Adolph Miller Allen , Shouyin Zhang , Xianmin Tang
CPC classification number: H01J37/3458 , C23C14/345 , C23C14/351 , C23C14/54 , H01J37/3402 , H01J37/345 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J37/3452 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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公开(公告)号：US20230187204A1
公开(公告)日：2023-06-15
申请号：US17844189
申请日：2022-06-20
Applicant: Applied Materials, Inc.
Inventor： Xiaodong Wang , Kevin Kashefi , Rongjun Wang , Shi You , Keith T. Wong , Yuchen Liu , Ya-Hsi Hwang , Jean Lu
IPC: H01L21/02 , H01L21/285
CPC classification number: H01L21/0234 , H01L21/28568
Abstract: Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.
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公开(公告)号：US11542589B2
公开(公告)日：2023-01-03
申请号：US16358465
申请日：2019-03-19
Applicant: APPLIED MATERIALS, INC.
Inventor： Rongjun Wang , Xiaodong Wang , Chao Du
Abstract: Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.
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公开(公告)号：US20200035527A1
公开(公告)日：2020-01-30
申请号：US16592084
申请日：2019-10-03
Applicant: Applied Materials, Inc.
Inventor： Fuhong Zhang , Sunil Kumar Garg , Paul Kiely , Martin Lee Riker , William Fruchterman , Zheng Wang , Xiaodong Wang
IPC: H01L21/67 , G05B19/418 , G05B15/02
Abstract: Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional second adjacent process chamber. The start time of the subject process chamber is controlled to prevent temporal overlap of the electromagnetic window of the subject chamber with the electromagnetic window of an adjacent chamber.
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Patent Agency Ranking
6.发明授权公开(公告)号：US12094699B2
公开(公告)日：2024-09-17
申请号：US18237934
申请日：2023-08-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong Wang , Joung Joo Lee , Fuhong Zhang , Martin Lee Riker , Keith A. Miller , William Fruchterman , Rongjun Wang , Adolph Miller Allen , Shouyin Zhang , Xianmin Tang
CPC classification number: H01J37/3458 , C23C14/345 , C23C14/351 , C23C14/54 , H01J37/3402 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J37/345 , H01J37/3452 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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公开(公告)号：US20230313364A1
公开(公告)日：2023-10-05
申请号：US17737361
申请日：2022-05-05
Applicant: Applied Materials, Inc.
Inventor： Kevin KASHEFI , Xiaodong Wang , Suhas Bangalore Umesh , Zheng Ju , Jiajie Cen
CPC classification number: C23C14/3407 , C23C14/3485 , H01J37/3405 , C23C14/345 , C23C14/35 , C23C14/50 , H01J37/3458 , H01J37/32082
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.
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公开(公告)号：US11011357B2
公开(公告)日：2021-05-18
申请号：US15890694
申请日：2018-02-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Hanbing Wu , Anantha K. Subramani , Ashish Goel , Xiaodong Wang , Wei W. Wang , Rongjun Wang , Chi Hong Ching
Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.
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公开(公告)号：US20240258164A1
公开(公告)日：2024-08-01
申请号：US18418786
申请日：2024-01-22
Applicant: Applied Materials, Inc.
Inventor： Jiajie Cen , Carmen Leal Cervantes , Yong Jin Kim , Kevin Kashefi , Xiaodong Wang
IPC: H01L21/768 , H01L21/02
CPC classification number: H01L21/76844 , H01L21/02063
Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A pre-clean process is performed before a self-assembled monolayer (SAM) is formed on the bottom of the gap. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.
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公开(公告)号：US11952655B2
公开(公告)日：2024-04-09
申请号：US17737361
申请日：2022-05-05
Applicant: Applied Materials, Inc.
Inventor： Kevin Kashefi , Xiaodong Wang , Suhas Bangalore Umesh , Zheng Ju , Jiajie Cen
CPC classification number: C23C14/351 , C23C14/345 , C23C14/3485 , H01J37/3405 , H01J37/3458 , H01J37/3467
Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.
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