公开(公告)号：US20200243598A1

公开(公告)日：2020-07-30

申请号：US16750227

申请日：2020-01-23

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun CHIU ,  Tsung-Hsun CHIANG ,  Liang-Sheng CHI ,  Jing JIANG ,  Jie CHEN ,  Tzung-Shiun YEH ,  Hsin-Ying WANG ,  Hui-Chun YEH ,  Chien-Fu SHEN

IPC: H01L27/15 ,  H01L33/62 ,  F21K9/00 ,  H01L33/36

Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

公开(公告)号：US20200035863A1

公开(公告)日：2020-01-30

申请号：US16592428

申请日：2019-10-03

Applicant: EPISTAR CORPORATION

Inventor： Tzung-Shiun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/38

Abstract: An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes transparent insulated material; a transparent conductive layer, formed on the current blocking region and/or a surface of the semiconductor stack; a first opening, formed in the first pad portion, wherein in a top view, the first opening includes elongated shape; and a first electrode, including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening.

公开(公告)号：US20190189850A1

公开(公告)日：2019-06-20

申请号：US16220444

申请日：2018-12-14

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/14 ,  H01L33/62 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62

Abstract: A light-emitting device, includes a first semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, including a second core region under the second pad electrode and a extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the extending region; wherein a contour of the second core region has a shape different from that of the second pad electrode; wherein the transparent conductive layer includes a first opening having a width wider than a width of the second pad electrode, wherein the second finger electrode includes a portion extending from the contour of the second pad electrode and having a width wider than other portion of the second finger electrode, and part of the portion is not covered by the transparent conductive layer.

公开(公告)号：US20190035846A1

公开(公告)日：2019-01-31

申请号：US16037862

申请日：2018-07-17

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L27/15 ,  H01L33/44 ,  H01L33/38 ,  H01L25/075 ,  H01L33/62 ,  H01L33/20

Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.

公开(公告)号：US20180114880A1

公开(公告)日：2018-04-26

申请号：US15839160

申请日：2017-12-12

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/06 ,  H01L33/22 ,  H01L33/14

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.

公开(公告)号：US20170263674A1

公开(公告)日：2017-09-14

申请号：US15605532

申请日：2017-05-25

Applicant: EPISTAR CORPORATION

Inventor： Jhih-Yong YANG ,  Hui-chun YEH ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A light-emitting structure, comprising: a first light-emitting structure unit and a second light-emitting structure unit, adjacent to and spaced apart from each other; and an electrical connection arranged on the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light emitting structure unit; wherein the first light-emitting structure unit comprises a first side surface and a second side surface; wherein the first side surface is between the first and the second light-emitting structure units, and the second side surface is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the first side surface is inclined and a slope of the first side surface is gentler than a slope of the second side surface.

公开(公告)号：US20160307961A1

公开(公告)日：2016-10-20

申请号：US15196717

申请日：2016-06-29

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20 ,  H01L33/44

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, conformably formed on the trench and covering the bottom portion and sidewalls of the first and the second light-emitting units; and an electrical connection, formed on the insulating layer and electrically connecting the first and the second light-emitting units. The electrical connection includes a bridging portion covering the trench and a joining portion extending from the bridging portion and formed on the first and the second light-emitting units; wherein the bridging portion is wider than the joining portion; wherein a part of the insulating layer is formed under the joining portion.

Abstract translation: 这里公开了一种发光装置。 发光装置包括：基板; 分别形成在基板上的第一发光单元和第二发光单元; 在第一和第二发光单元之间的沟槽，包括露出衬底的底部; 绝缘层，顺应地形成在沟槽上并覆盖第一和第二发光单元的底部和侧壁; 以及形成在绝缘层上并电连接第一和第二发光单元的电连接。 电气连接包括覆盖沟槽的桥接部分和从桥接部分延伸并形成在第一和第二发光单元上的接合部分; 其中所述桥接部分比所述接合部分宽; 其中，所述绝缘层的一部分形成在所述接合部的下方。

公开(公告)号：US20140191277A1

公开(公告)日：2014-07-10

申请号：US14150418

申请日：2014-01-08

Applicant: Epistar Corporation

Inventor： Hong-Che CHEN ,  Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Yu-Chen YANG ,  Jia-Kuen WANG ,  Chih-Nan LIN

IPC: H01L33/48

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/405 ,  H01L33/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises: a light-emitting semiconductor stack comprising a recess and a mesa, wherein the recess comprises a bottom and the mesa comprises an upper surface; a first insulating layer in the recess and on a part of the upper surface of the mesa; and a first electrode comprising a first layer and a second layer, wherein the first layer comprises a first conductive material and is on another part of the upper surface of the mesa, and the second layer comprises a second conductive material and is on the first layer.

Abstract translation: 发光装置包括：发光半导体堆叠，其包括凹部和台面，其中所述凹部包括底部，所述台面包括上表面; 在所述凹部中和所述台面的上表面的一部分上的第一绝缘层; 以及包括第一层和第二层的第一电极，其中所述第一层包括第一导电材料并且位于所述台面的上表面的另一部分上，并且所述第二层包括第二导电材料并且位于所述第一层上 。

公开(公告)号：US20140093991A1

公开(公告)日：2014-04-03

申请号：US14097150

申请日：2013-12-04

Applicant: Epistar Corporation

Inventor： Chien-Kai CHUNG ,  Ya Lan YANG ,  Ting-Chia KO ,  Tsun-Kai KO ,  Jung-Min HWANG ,  Schang-Jing HON ,  De-Shan KUO ,  Chien-Fu SHEN ,  Ta-Cheng HSU ,  Min-Hsun HSIEH

IPC: H01L33/00 ,  H01L21/304 ,  H01L21/02

CPC classification number: H01L33/005 ,  H01L21/02057 ,  H01L21/3043 ,  H01L33/0095

Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.

Abstract translation: 一种制造发光器件的方法，包括以下步骤：通过激光束切割衬底以在衬底中形成空腔，并通过切割直接在衬底上产生副产物，并通过化学物质除去副产物 溶液在预定的清洁温度下含有酸。

公开(公告)号：US20210234071A1

公开(公告)日：2021-07-29

申请号：US17228602

申请日：2021-04-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Chien-Chih LIAO ,  Tzu-Yao TSENG ,  Tsun-Kai KO ,  Chien-Fu SHEN

IPC: H01L33/38

Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.