公开(公告)号：US20150325660A1

公开(公告)日：2015-11-12

申请号：US14578072

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/22 ,  H01L33/28 ,  H01L29/04

CPC classification number: H01L29/22 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/1066 ,  H01L29/24 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/7722 ,  H01L29/7786 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26 ,  H01L33/28 ,  H01L33/42 ,  H01L2933/0016

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Abstract translation: 提供了具有良好半导体特性的结晶多层结构。 特别地，结晶多层结构具有如下良好的电性能：导电性的可控性良好; 并且垂直传导是可能的。 结晶多层结构包括含有单轴取向金属作为主要成分的金属层和直接设置在金属层上的半导体层或其间的另一层并且包含结晶氧化物半导体作为主要成分的金属层。 结晶氧化物半导体包含一种或多种选自镓，铟和铝的金属，并且是单轴取向的。

公开(公告)号：US20150279927A1

公开(公告)日：2015-10-01

申请号：US14577917

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/26 ,  H01L21/477

CPC classification number: H01L29/04 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/477 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/8611 ,  H01L29/872

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

Abstract translation: 提供了一种高导电性结晶多层结构，其包括即使在退火（加热）后电阻也不增加的刚玉结构的结晶氧化物薄膜。 结晶多层结构包括基底和刚玉结构的结晶氧化物薄膜，其直接设置在基底基板上，或者在其间具有另一层。 结晶性氧化物薄膜的厚度为1μm以上，电阻率为80mΩ·cm以上。 半导体器件包括结晶多层结构。

公开(公告)号：US11916103B2

公开(公告)日：2024-02-27

申请号：US17866747

申请日：2022-07-18

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

CPC classification number: H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/47 ,  H01L29/739 ,  H01L29/7391 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L33/26 ,  H02M3/28

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US11107926B2

公开(公告)日：2021-08-31

申请号：US16313239

申请日：2017-06-30

Applicant: FLOSFIA INC.

Inventor： Tomochika Tanikawa ,  Toshimi Hitora

IPC: H01L29/786 ,  H01L29/12 ,  H01L29/78 ,  H01L21/02

Abstract: A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.

公开(公告)号：US11087977B2

公开(公告)日：2021-08-10

申请号：US16326569

申请日：2017-08-29

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo Fujita ,  Kentaro Kaneko ,  Masaya Oda ,  Toshimi Hitora

IPC: H01L21/02 ,  C23C16/40 ,  H01L29/872 ,  H01L33/26 ,  H01L29/24 ,  C23C16/448 ,  H01L29/78 ,  H01L29/808 ,  H01L29/778 ,  H01L29/737 ,  H01L29/739 ,  H01L29/812 ,  H01L29/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/423

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium.

公开(公告)号：US10943981B2

公开(公告)日：2021-03-09

申请号：US16110123

申请日：2018-08-23

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/24 ,  H01L29/868 ,  H01L29/06 ,  H01L29/04 ,  H01L21/02 ,  H01L29/66 ,  H01L29/872

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. The i-type semiconductor layer includes an oxide semiconductor as a major component. The oxide semiconductor that is included as the major component of the i-type semiconductor layer includes at least one metal selected from among aluminum, indium, and gallium.

公开(公告)号：US10439028B2

公开(公告)日：2019-10-08

申请号：US15320253

申请日：2015-07-21

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: C23C16/44 ,  C23C16/40 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/78 ,  H01L33/00 ,  H01L33/26 ,  H01L33/44 ,  C23C16/448 ,  H01L29/739 ,  H01L29/772 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US10109707B2

公开(公告)日：2018-10-23

申请号：US14577917

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/26 ,  H01L21/47 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/24 ,  H01L29/87 ,  H01L29/86 ,  H01L21/477 ,  H01L29/786 ,  H01L29/861 ,  H01L29/872

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

公开(公告)号：US10090388B2

公开(公告)日：2018-10-02

申请号：US14578017

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).

公开(公告)号：US09711590B2

公开(公告)日：2017-07-18

申请号：US14233699

申请日：2013-09-24

Applicant: FLOSFIA INC.

Inventor： Kentaro Kaneko ,  Toshimi Hitora ,  Takashi Hirao

IPC: H01L29/04 ,  C30B29/22 ,  H01L21/02 ,  C30B25/02 ,  C30B29/20 ,  H01L29/24

CPC classification number: H01L29/04 ,  C30B25/02 ,  C30B29/20 ,  C30B29/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/24

Abstract: There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.