公开(公告)号：US20220285550A1

公开(公告)日：2022-09-08

申请号：US17824198

申请日：2022-05-25

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andreas Meiser ,  Hans-Peter Lang ,  Thorsten Meyer ,  Peter Irsigler

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/02 ,  H01L29/66 ,  H01L23/48 ,  H01L27/06 ,  H01L29/861 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/45 ,  H01L21/74 ,  H01L29/423

Abstract: A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.

公开(公告)号：US20220254713A1

公开(公告)日：2022-08-11

申请号：US17173863

申请日：2021-02-11

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Sergey Ananiev ,  Andreas Behrendt ,  Holger Doepke ,  Uwe Schmalzbauer ,  Michael Sorger ,  Dominic Thurmer

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

公开(公告)号：US10957686B2

公开(公告)日：2021-03-23

申请号：US16744693

申请日：2020-01-16

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Markus Zundel ,  Peter Brandl ,  Kurt Matoy ,  Thomas Ostermann

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/786 ,  H01L29/40 ,  H01L49/02 ,  H01L29/739 ,  H01L29/808

Abstract: A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area, and a pn junction diode electrically connected in series with the resistor. A method of producing the semiconductor device is also described.

公开(公告)号：US10593799B2

公开(公告)日：2020-03-17

申请号：US16100496

申请日：2018-08-10

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Peter Brandl ,  Andrew Christopher Graeme Wood

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L21/225 ,  H01L21/266 ,  H01L29/40 ,  H01L21/265

Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.

公开(公告)号：US10186508B2

公开(公告)日：2019-01-22

申请号：US15792492

申请日：2017-10-24

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Markus Zundel ,  Peter Brandl ,  Kurt Matoy ,  Thomas Ostermann

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L49/02 ,  H01L29/739 ,  H01L29/808 ,  H01L29/40

Abstract: A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area.

公开(公告)号：US09960268B2

公开(公告)日：2018-05-01

申请号：US15288243

申请日：2016-10-07

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Christian Kampen ,  Jacob Tillmann Ludwig

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

Abstract: A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. A majority of dopants within the first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer. Further, a majority of dopants within the second drift region portion are a second species of dopants. Additionally, the semiconductor device includes a trench extending from a surface of the semiconductor layer into the semiconductor layer. A vertical distance of a border between the first drift region portion and the second drift region portion to the surface of the semiconductor layer is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.

公开(公告)号：US09941276B2

公开(公告)日：2018-04-10

申请号：US15197930

申请日：2016-06-30

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Franz Hirler ,  Norbert Krischke

IPC: H01L27/07 ,  H01L29/08 ,  H01L21/74 ,  H01L49/02 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/94 ,  H01L21/321 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/0733 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/32105 ,  H01L21/743 ,  H01L21/823437 ,  H01L27/0629 ,  H01L28/40 ,  H01L28/60 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7825 ,  H01L29/945

Abstract: A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench. The method also includes producing a capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode. The gate electrode and the at least one electrode of the electrode structure are produced by common process steps.

公开(公告)号：US09799521B2

公开(公告)日：2017-10-24

申请号：US15059783

申请日：2016-03-03

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Thomas Schweinboeck ,  Jesper Wittborn ,  Erwin Bacher ,  Juergen Holzmueller ,  Hans-Joachim Schulze

IPC: H01L51/40 ,  H01L21/266 ,  H01L21/265 ,  H01L21/66 ,  H01L29/36 ,  H01L51/05 ,  H01L29/06 ,  H01L51/00

CPC classification number: H01L21/266 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26546 ,  H01L22/30 ,  H01L22/32 ,  H01L22/34 ,  H01L29/0692 ,  H01L29/36 ,  H01L51/0002 ,  H01L51/05

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

公开(公告)号：US20170263719A1

公开(公告)日：2017-09-14

申请号：US15603623

申请日：2017-05-24

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Markus Zundel ,  Anton Mauder ,  Andreas Meiser ,  Franz Hirler ,  Hans Weber

IPC: H01L29/40 ,  H01L21/308 ,  H01L21/265 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L21/225

CPC classification number: H01L29/407 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02258 ,  H01L21/225 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/3081 ,  H01L21/76802 ,  H01L21/76877 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/66696 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A method for manufacturing a semiconductor structure is provided, which may include: forming a p-doped region adjacent to an n-doped region in a substrate; carrying out an anodic oxidation to form an oxide layer on a surface of the substrate, wherein the oxide layer in a first portion of the surface extending along the n-doped region has a greater thickness than the oxide layer in a second portion of the surface extending along the p-doped region.

公开(公告)号：US20170117383A1

公开(公告)日：2017-04-27

申请号：US15398818

申请日：2017-01-05

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Anton Mauder ,  Markus Zundel ,  Hans-Joachim Schulze ,  Franz Hirler ,  Hans Weber

IPC: H01L29/66 ,  H01L21/306 ,  H01L29/78 ,  H01L29/06 ,  H01L29/739 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L29/66333 ,  H01L21/02118 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/30604 ,  H01L21/76831 ,  H01L21/76898 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/861

Abstract: A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate. Additionally, the method includes connecting a carrier substrate to the oxide layer and processing a back side of the semiconductor substrate.