公开(公告)号：US20160148810A1

公开(公告)日：2016-05-26

申请号：US14929186

申请日：2015-10-30

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/268 ,  B23K26/00 ,  B23K26/06 ,  H01L21/263

CPC classification number: H01L21/268 ,  B23K26/0626 ,  B23K26/066 ,  B23K26/352 ,  B23K2103/56 ,  H01L21/2636

Abstract: High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO2-based line-forming system configured to form at a wafer surface a first line image having between 2000 W and 3000 W of optical power. The line image is scanned over the wafer surface to locally raise the temperature up to a defect anneal temperature. The system can include a visible-wavelength diode-based line-forming system that forms a second line image that can scan with the first line image to locally raise the wafer surface temperature from the defect anneal temperature to a spike anneal temperature. Use of the visible wavelength for the spike annealing reduces adverse pattern effects and improves temperature uniformity and thus annealing uniformity.

Abstract translation: 公开了用于缺陷退火和掺杂剂激活的高效线形成光学系统和方法。 该系统包括基于CO 2的线形成系统，其被配置为在晶片表面处形成具有2000W和3000W光功率的第一线图像。 在晶片表面上扫描线图像以局部地将温度升高到缺陷退火温度。 该系统可以包括基于可见光波长二极管的线形成系统，其形成可以利用第一线图像扫描以将晶片表面温度从缺陷退火温度局部升高到尖峰退火温度的第二线图像。 使用可见波长进行尖峰退火可减少不利的图案效应，并提高温度均匀性，从而降低退火均匀性。

公开(公告)号：US20160086832A1

公开(公告)日：2016-03-24

申请号：US14490446

申请日：2014-09-18

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/67

CPC classification number: H01L21/67115 ,  B23K26/00 ,  B23K26/034 ,  B23K26/08 ,  B23K2103/56 ,  H01L21/00 ,  H01L21/02675 ,  H01L21/268 ,  H01L21/67248

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract translation: 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μs至约100μs的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。

公开(公告)号：US20140238958A1

公开(公告)日：2014-08-28

申请号：US13781682

申请日：2013-02-28

Applicant: ULTRATECH, INC.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: B23K26/00

CPC classification number: B23K26/352

Abstract: Systems and methods for processing a material layer supported by a substrate using a light-source assembly that includes LED light sources each formed from an array of LEDs. The material layer is capable of undergoing a photo-process having a temperature-dependent reaction rate. Some of the LEDs emit light of a first wavelength that initiate the photo-process while some of the LEDs emit light of a second wavelength that heats the substrate. The heat from the substrate then heats the material layer, which increases the temperature-dependent reaction rate of the photo-process.

Abstract translation: 用于使用包括由LED阵列形成的LED光源的光源组件来处理由衬底支撑的材料层的系统和方法。 材料层能够进行具有温度依赖性反应速率的光刻工艺。 一些LED发射第一波长的光，其启动光处理，而一些LED发射加热衬底的第二波长的光。 然后，来自基板的热量加热材料层，这增加了照相工艺的温度依赖性反应速率。

公开(公告)号：US20130330844A1

公开(公告)日：2013-12-12

申请号：US13909542

申请日：2013-06-04

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/66 ,  H01L21/67 ,  B23K26/00 ,  H01L21/263

CPC classification number: H01L21/324 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0608 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/082 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/268 ,  H01L21/67115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract translation: 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μa至约100μA的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。

公开(公告)号：US10090153B2

公开(公告)日：2018-10-02

申请号：US15598763

申请日：2017-05-18

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L21/268 ,  B23K26/12 ,  H01L29/20 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  C23C16/22 ,  B23K103/00

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US10083843B2

公开(公告)日：2018-09-25

申请号：US14941712

申请日：2015-11-16

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/268

CPC classification number: H01L21/324 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248

Abstract: Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.

公开(公告)号：US20180226241A1

公开(公告)日：2018-08-09

申请号：US15943115

申请日：2018-04-02

Applicant: Ultratech, Inc.

Inventor： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

IPC: H01L21/02 ,  H01L29/20 ,  H01L21/324 ,  C30B25/18 ,  C30B29/40 ,  C30B29/06

CPC classification number: H01L21/0251 ,  C23C16/303 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/46 ,  C23C16/56 ,  C30B25/02 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02694 ,  H01L21/3245 ,  H01L29/2003

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

公开(公告)号：US20170256394A1

公开(公告)日：2017-09-07

申请号：US15598763

申请日：2017-05-18

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC: H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/12 ,  B23K26/122 ,  H01L21/268 ,  H01L29/20

CPC classification number: H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20160181120A1

公开(公告)日：2016-06-23

申请号：US14941712

申请日：2015-11-16

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/324 ,  B23K26/352 ,  H01L21/67 ,  B23K26/06 ,  B23K26/082 ,  H01L21/66 ,  B23K26/00 ,  B23K26/0622

CPC classification number: H01L21/324 ,  H01L21/268 ,  H01L21/67115 ,  H01L21/67248

Abstract: Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.

Abstract translation: 公开了具有超短停留时间的激光退火系统和方法。 该方法包括用预热线图像局部预热晶片，然后相对于预热线图像快速扫描退火图像，以限定具有停留时间的扫描重叠区域在10ns至 500 ns。 这些超短停留时间对于进行产品晶片的表面或次表面熔融退火是有用的，因为它们阻止了器件结构的回流。

公开(公告)号：US20150331326A1

公开(公告)日：2015-11-19

申请号：US14281291

申请日：2014-05-19

Applicant: Ultratech, Inc.

Inventor： Peiqian Zhao ,  Emily M. True ,  Raymond Ellis ,  Andrew M. Hawryluk

IPC: G03F7/20 ,  G02B13/22 ,  G02B17/08

CPC classification number: G03F7/70958 ,  G02B17/0892 ,  G03F7/7015 ,  G03F7/70225

Abstract: A Wynne-Dyson projection lens for use in an ultraviolet optical lithography system is disclosed, wherein the projection lens is configured to have reduced susceptibility to damage from ultraviolet radiation. The projection lens utilizes lens elements that are made of optical glasses that are resistant to damage from ultraviolet radiation, but that also provide sufficient degrees of freedom to correct aberrations. The glass types used for the lens elements are selected from the group of optical glasses consisting of: fused silica, S-FPL51Y, S-FSL5Y, BSM51Y and BAL15Y.

Abstract translation: 公开了一种用于紫外线光刻系统的Wynne-Dyson投影透镜，其中投影透镜被配置为具有降低的对紫外线辐射损伤的敏感性。 投影透镜使用由光学眼镜制成的透镜元件，其能够抵抗来自紫外线辐射的损伤，但也提供足够的自由度来校正像差。 用于透镜元件的玻璃类型选自由熔融石英，S-FPL51Y，S-FSL5Y，BSM51Y和BAL15Y组成的一组光学眼镜。